Abstract: A method of growing a group III nitride crystal structure comprises: providing a silicon substrate (12); forming a first mask (10) on the substrate, the mask having a plurality of apertures (14) through it each exposing a respective area of the silicon substrate; etching the silicon exposed by each of the apertures to form a respective recess (16) having a plurality of facets (18, 20, 22, 24); depositing a second mask over some of the facets of each recess leaving at least one of the facets (22) of each recess exposed; and growing group III nitride on the exposed facets (22) and then over the substrate to form a continuous layer.

Abstract: A method (100) of making a semiconductor device, for example a light emitting diode. The method (100) includes providing (105) a semiconductor wafer, and providing (110) a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective layer is arranged to protect the wafer during the processing steps. The processing steps may include forming a mask layer (115) over the protective layer, which is used for etching through the protective layer and into the semiconductor wafer, removing the mask layer, or etching filling materials (150) provided over the selectively etched semiconductor wafer.

Abstract: A method of making a semiconductor device comprises: providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a second mask layer over the first mask layer; annealing the second mask layer to form islands; etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars; and growing semiconductor material between the pillars and then over the tops of the pillars.

Abstract: A method of making a semiconductor device comprises : providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a second mask layer over the first mask layer; annealing the second mask layer to form islands; etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars; and growing semiconductor material between the pillars and then over the tops of the pillars.

Abstract: A method (100) of making a semiconductor device, for example a light emitting diode. The method (100) includes providing (105) a semi-conductor wafer, and providing (110) a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective layer is arranged to protect the wafer during the processing steps. The processing steps may include forming a mask layer (115) over the protective layer, which is used for etching through the protective layer and into the semiconductor wafer, removing the mask layer, or etching filling materials (150) provided over the selectively etched semiconductor wafer.

Abstract: A method of producing a light emitting device comprises providing a wafer structure including a light emitting layer of III-nitride semiconductor material; dry etching the wafer at least part way through the light emitting layer so as to leave exposed surfaces of the emitting layer; and treating the exposed surfaces of the emitting layer with a plasma. The treatment may be using hot nitric acid or a hydrogen plasma.