Patents Assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
  • Patent number: 11967625
    Abstract: A MOSFET device includes an epitaxial region disposed on an upper surface of a substrate, the substrate serving as a drain region in the MOSFET device, and at least two body regions formed in the epitaxial region. The body regions are disposed proximate an upper surface of the epitaxial region and spaced laterally apart. The device further includes at least two source regions disposed in respective body regions, proximate an upper surface of the body regions, and a gate structure including at least two planar gates and a trench gate. Each of the planar gates is disposed on the upper surface of the epitaxial region and overlaps at least a portion of a corresponding body region. The trench gate is formed partially through the epitaxial region and between the body regions.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: April 23, 2024
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventor: Shuming Xu
  • Patent number: 11943853
    Abstract: A full voltage sampling circuit includes a main sampling circuit, an assist sampling circuit and a processing circuit. The main sampling circuit receives first and second input voltages, and outputs a first sampling signal according to the first and second input voltages. The first sampling signal represents a differential voltage which indicates a difference between the first input voltage and the second input voltage. The assist sampling circuit receives the first and second input voltages, and outputs a second sampling signal according to the first and second input voltages. The second sampling signal represents the differential voltage. The processing circuit is coupled to the main sampling circuit and the assist sampling circuit, and selects a larger one of currents or voltages of the first and second sampling signals as a sampling result to be outputted.
    Type: Grant
    Filed: November 2, 2022
    Date of Patent: March 26, 2024
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Zhen Li, Weijia Yu, Minmin Fan
  • Patent number: 11942786
    Abstract: A power supply circuit, a compensation circuit and a harmonic distortion compensation method thereof are disclosed. The power supply circuit includes a rectifier and filter module, a main power stage module, a voltage waveform detection module and a compensation module. The rectifier and filter module converts an AC voltage into a DC voltage. The main power stage module receives the DC voltage and provides power to a load. The voltage waveform detection module is configured to detect a waveform of the DC voltage and derive, from the waveform, information about each cycle of the DC voltage. The compensation module is configured to generate a compensation signal based on the information about each cycle of the DC voltage and trigger the main power stage module to perform compensation operation based on the compensation signal. The compensation operation is performed to accomplish total harmonic distortion compensation of the power supply circuit.
    Type: Grant
    Filed: September 20, 2022
    Date of Patent: March 26, 2024
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Jianjing Lv, Minmin Fan
  • Patent number: 11929684
    Abstract: Isolated power supply control circuits, isolated power supply and control method thereof are disclosed, the control circuit for controlling an isolated power supply includes a secondary-side control signal generator and a primary-side control signal generator. The secondary-side control signal generator produces a secondary-side transistor switch control signal containing information about a turn-off instant of a secondary-side synchronous rectification transistor, which serves as a second turn-on instant. The primary-side control signal generator derives, from a feedback signal, a supposed turn-on instant for a primary-side transistor switch, which serves as a first turn-on instant. The primary side turn-on signal generator further derives a turn-on instant for the primary-side transistor switch from the second or first turn-on instant whichever is later and responsively generates a primary-side transistor switch control signal.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: March 12, 2024
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Yanmei Guo, Zhen Zhu, Yihui Chen, Yuehui Li, Xiaoru Gao, Haifeng Miao, Hanfei Yang
  • Patent number: 11909300
    Abstract: A switch-mode power supply (SMPS), an SMPS system and a power supply method for an SMPS system are disclosed. The SMPS controller includes an output-voltage power supply unit, a built-in energy storage unit and a logic control unit. The output-voltage power supply unit is configured to charge the built-in energy storage unit using an output voltage from the SMPS system so that the built-in energy storage unit can provide an operating voltage for the logic control unit. The use of a stand-off energy storage capacitor can be dispensed with, and the use of the output voltage as a power supply is enabled. As a result, significant reductions in overall and standby power dissipation are achieved. In addition, the SMPS controller may further include a high-voltage power supply unit, which provides a hybrid power supply solution, together with the output-voltage power supply unit.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: February 20, 2024
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Rulong Jiang, Liqiang Hu, Shungen Sun, Zhen Zhu, Xiaoru Gao, Yihui Chen, Hong Zhang, Pengfei Lu
  • Patent number: 11839002
    Abstract: A control circuit for a constant-current drive circuit, as well as a constant-current drive circuit are disclosed. The control circuit can obtain output information of the constant-current drive circuit and use it in combination with reference information to determine, according to an output condition corresponding to the current load of the constant-current drive circuit, a time point for the system to enter or exit a rapid drive mode. Therefore, it can be suitably used in various application scenarios to determine a time point for the system to entry into or exit from the rapid start mode. Compared with fast charging for a fixed period of time as used in the prior art, embodiments of the present invention can effectively overcome the problem of easy overshooting or inadequate acceleration during start as found in various applications.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: December 5, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Xiaohui Cai, Shungen Sun
  • Publication number: 20230343869
    Abstract: An LDMOS device includes a semiconductor substrate of a first conductivity type, a doped drift region of a second conductivity type formed on at least a portion of the substrate, and a body region of the first conductivity type formed in the drift region. Source and drain regions of the second conductivity type are formed proximate an upper surface of the body region and drift region, respectively, and spaced laterally from one another. A gate structure is disposed between the source and drain regions and includes a control gate formed over the body region, and a field plate formed over the drift region, the gate structure being electrically isolated from the body and drift regions by a first insulating layer. An oxide structure is formed on a portion of the field plate and a portion of the drift region, the oxide structure overlapping a corner of the field plate.
    Type: Application
    Filed: December 12, 2022
    Publication date: October 26, 2023
    Applicant: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Shuming XU, Lei SHI, Jian WU
  • Patent number: 11799379
    Abstract: A control circuit, system and method for switched-mode power supply are disclosed, the control circuit is for driving a first switch to convert an input voltage into an output voltage. The control circuit includes an on-time control unit, which receives a first signal characterizing switching frequency of first switch and a second signal characterizing current flowing through first switch and responsively generates a signal indicative of a turn-off instant for first switch. When a peak value of the current flowing through the first switch drops below a predefined value, the on-time control unit determines the turn-off instant for the first switch based on the first signal so that the switching frequency of the first switch is maintained at a target frequency. This design can effectively avoid the generation of audible noise, stabilize the output voltage against loading changes while maintaining desirable efficiency, and ensure operational safety of the switched-mode power supply.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: October 24, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Yanmei Guo, Yihui Chen, Haifeng Miao, Yuehui Li, Xiaoru Gao, Zhen Zhu
  • Publication number: 20230317719
    Abstract: A semiconductor structure includes at least a first chip, the first chip comprising a semiconductor substrate and an active layer formed on an upper surface of the substrate, one or more lateral metal-oxide semiconductor devices being formed in the active layer of the first chip. The semiconductor structure further includes at least a first integrated capacitor disposed on a back-side of the semiconductor substrate of the first chip. The first integrated capacitor includes a first conductive layer in electrical connection with the back-side of the substrate, an insulating layer formed on at least a portion of an upper surface of the first conductive layer, and a second conductive layer formed on at least a portion of an upper surface of the insulating layer.
    Type: Application
    Filed: July 15, 2022
    Publication date: October 5, 2023
    Applicant: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Luyao Song, Hang Fan, Jian Wu, Lei Shi, Shuming Xu
  • Patent number: 11775035
    Abstract: The invention relates to a multi-phase power supply regulator and a temperature balance control method thereof. The method comprises: providing a multi-phase power supply regulator which includes a controller and a plurality of power stages, transmitting a plurality of control signals to the plurality of power stages respectively by the controller. Each of the plurality of power stages includes a temperature sampling unit, wherein outputs of the temperature sampling units are connected in parallel and the plurality of power stages outputs a temperature detection signal. The invention determines one of the plurality of power stages comprising highest temperature by sequentially adjusting the control signals, the temperature of the power stage is reduced, and the temperatures of the multi-phase power supply regulator are balanced.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: October 3, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Li-Qiang Hu, Shun-Gen Sun
  • Patent number: 11737180
    Abstract: A control circuit, a chip and a control method are disclosed. The control circuit includes: an adjustment signal generation unit configured to detect an electrical signal reflecting a power supplied to a load under control of a current value of a reference signal, generate a feedback signal and output an adjustment signal based on both the feedback signal and the reference signal; and a control unit coupled to the adjustment signal generation unit and configured to control the switching circuit on and off based on the adjustment signal. With the generated adjustment signal that reflects a change in an adjustment metric indicated in the reference signal, the control circuit and the driving system can be adapted in real time to the specifications of any AC power standard. Moreover, much more granular adjustments can be made in the power supplied to the load.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: August 22, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Xiaoru Gao, Shungen Sun, Fuqiang Zhang, Xiaohui Cai
  • Patent number: 11728722
    Abstract: A control circuit for a power converter comprising switching transistors and an output inductor is disclosed. One terminal of the output inductor serves as an output node, and another terminal of the output inductor serves as a switching node. The control circuit is configured to generate a control signal for controlling switching transistors in the power converter. The control circuit includes: a RC oscillator network connected to two terminals of the output inductor, the RC oscillator network configured to generate an oscillation signal containing a feedback ramp slope compensation component in response to a change in a voltage across the terminals of the output inductor; a comparator; an on-time generation circuit; and a control signal generation circuit to generate the control signal for controlling the switching transistors in the power converter.
    Type: Grant
    Filed: December 30, 2021
    Date of Patent: August 15, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Shungen Sun, Hanfei Yang
  • Publication number: 20230238458
    Abstract: A capacitor is provided for integration with a MOSFET device(s) formed on the same substrate. The capacitor comprises a first plate including a doped semiconductor layer of a first conductivity type, an insulating layer formed on an upper surface of the doped semiconductor layer, and a second plate including a polysilicon layer formed on an upper surface of the insulating layer. An inversion layer is formed in the doped semiconductor layer, beneath the insulating layer and proximate the upper surface of the doped semiconductor layer, as a function of an applied voltage between the first and second plates of the capacitor. At least one doped region of a second conductivity type, opposite the first conductivity type, is formed in the doped semiconductor layer adjacent to a drain and/or source region of the first conductivity type formed in the MOSFET device. The doped region is electrically connected to the inversion layer.
    Type: Application
    Filed: May 16, 2022
    Publication date: July 27, 2023
    Applicant: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Shuming Xu, Jian Wu
  • Patent number: 11671003
    Abstract: A multi-phase control circuit and a temperature balance control method thereof The temperature balance control method of the multi-phase control circuit includes the steps of: acquiring a first temperature signal reflecting a representative temperature among a plurality of power stages, then acquiring a plurality of second temperature signals reflecting a respective temperature of each of the plurality of power stages; and adjusting a pulse width and/or frequency of a pulse width modulation signal of at least one of the plurality of power stages according to a comparison result between the first temperature signal and the second temperature signal so as to balance the temperatures of the plurality of power stages.
    Type: Grant
    Filed: November 8, 2021
    Date of Patent: June 6, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Li-Qiang Hu, Shun-Gen Sun
  • Patent number: 11659639
    Abstract: The present invention provides a power control circuit which has a timing unit used for timing an elapsed time of current half cycle of the phase-cut AC power supply signal, outputting a current accumulated timing duration, and outputting a first control signal at a starting moment when a starting point of a half cycle of the AC power supply signal is detected; a regulating unit connected to the timing unit and comprising a temporary storage module, wherein a final reference time interval is stored in the temporary storage module, and when the current accumulated timing duration reaches the final reference time interval, the regulating unit outputs a second control signal; and a control unit connected to the detection unit and the regulating unit and used for controlling current in a load based on the first control signal and the second control signal.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: May 23, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Wei-Jia Yu, Min-Min Fan, Feng Qi
  • Patent number: 11606034
    Abstract: Multiphase power processing circuit and a method for control thereof are disclosed, with which, exchange of data is achievable between a multiphase controller and any of power processing circuits via pins of at least two of the three categories, Enable, PWM and Temperature Indicator, of the multiphase controller. The exchanged data may include, but is not limited to, a phase identifier, an over-current protection threshold, an over-current protection threshold, an over-temperature protection threshold, a current sampling gain, a current sampling bias, a temperature sampling gain, a temperature sampling bias, a drive speed and the like of the power processing circuit. In this way, improvements in system flexibility and security are obtained.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: March 14, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventor: Shungen Sun
  • Patent number: 11552546
    Abstract: The present invention discloses a multi-phase power supply dynamic response control circuit and a control method. When a rapid rise of the load is detected, an output PWM signal is temporarily adjusted to enter a second operation mode from a first operation mode to supplement energy to the load and prevent the output voltage from decreasing. The present invention requires little modification to the existing circuit, and adopts simple, explicit and efficient detection method, realizing rapid dynamic response by providing sufficient energy for the load when the load current is suddenly increased.
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: January 10, 2023
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventor: Shun-Gen Sun
  • Patent number: 11490483
    Abstract: The present disclosure provides a leakage protection circuit, a method and a drive device. The leakage protection circuit is used for being electrically connected with the power supply line of a load, and may be configured to sample the power supply line at intervals, detect the voltage of the sampled electrical signals to determine whether the voltage of the AC input power is divided, and provide leakage protection based on the determined result. The present disclosure can prevent human from electric shock through sampling the electric signals from the power supply line at intervals and performing voltage detection and comparasion to determine whether the voltage of the accessed AC input power is divided, when the voltage of the accessed AC input power is determined to be divided, the power supply line will be controlled in non-conductive state.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: November 1, 2022
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Shungen Sun, Weijia Yu
  • Patent number: 11483910
    Abstract: A linear driving system for LED with high power factor including a rectifying circuit receiving an AC voltage and generating a DC voltage to a power supply bus having a protection circuit coupled thereto. The protection circuit includes a detection unit for acquiring a voltage signal based on a power supply bus voltage, and to generate a detection result which indicates undesirable oscillation on the power supply bus voltage. A control unit includes a delay control module connected with the detection unit, and is coupled to the detection unit and for generating a control signal based on the detection result. The delay control module is for outputting a first control signal when undesirable oscillation happens, and outputting a second control signal after a protection period when undesirable oscillation disappears. A switch circuit controlled by the first control signal and the second control signal turns off for the protection period.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: October 25, 2022
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Wei-Jia Yu, Min-Min Fan, Feng Qi, Shun-Gen Sun, Fu-Qiang Zhang
  • Patent number: 11456676
    Abstract: A power conversion circuit and a method thereof, wherein the power conversion circuit includes a first grid interface and a second grid interface coupled to an AC power source, a power harvesting module, a sampling module and a switching module. The power harvesting module is coupled to the first grid interface, and the power harvesting module includes a first diode and a first charging capacitor coupled to the first diode. The power harvesting module receives the AC power source from the first grid interface to generate an output voltage. The switching module includes a switch component controlled by the sampling module. The sampling module is coupled to the power harvesting module and acquires a sampling voltage. The sampling module controls the switch component to be turned off during at least a period of time within positive half cycles of the AC power source.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: September 27, 2022
    Assignee: SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
    Inventors: Shun-Gen Sun, Wei-Jia Yu, Sheng-Hong Wu