Abstract: A recessed-gate thin-film transistor (RG-TFT) with a self-aligned lightly doped drain (LDD) is provided, along with a corresponding fabrication method. The method deposits an insulator overlying a substrate and etches a trench in the insulator. The trench has a bottom and sidewalls. An active silicon (Si) layer is formed overlying the insulator and trench, with a gate oxide layer over the active Si layer. A recessed gate electrode is then formed in the trench. The TFT is doped and LDD regions are formed in the active Si layer overlying the trench sidewalls. The LDD regions have a length that extends from a top of the trench sidewall, to the trench bottom, with a doping density that decreases in response to the LDD length. Alternately stated, the LDD length is directly related to the depth of the trench.

Abstract: In a UPnP network, a system and method have been provided for multicasting a byebye message by proxy. The method comprises: maintaining a list of available networked devices; maintaining a record of advertised UPnP elements; comparing the list of available networked devices to the record of advertised UPnP elements; and, multicasting a byebye message by proxy, for advertised UPnP elements associated with networked devices that are no longer available. The comparison of the list of available networked devices to the record of UPnP elements includes determining advertised UPnP elements in the record that cannot be cross-referenced to available networked devices. The method further comprises removing UPnP elements from the record in response to the comparison.

Abstract: A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous silicon with a surface and a plurality of areas; irradiating each adjacent areas of the silicon film with a first sequence of laser pulses; and, in response to the first sequence of laser pulses, controlling the planarization of the silicon film surface between adjacent areas of the silicon film as the crystal grains are laterally grown. By controlling the number of laser pulses in the sequence, the temporal separation between pulses, and the relative intensity of the pulses, the lateral growth length characteristics of the crystal grains can be-traded against the silicon film flatness. A silicon film formed by a pulsed laser sequence crystallization process is also provided.