Abstract: Provided is a heat-curable resin composition having an excellent workability, and capable of yielding a cured product having both a heat resistance and a low water-absorption property. The heat-curable resin composition contains: (A) a cyanate ester compound having in one molecule at least two cyanato groups, and having a cyanate ester group equivalent of 50 to 140; (B) a cyanate ester compound having in one molecule at least two cyanato groups, and having a cyanate ester group equivalent of 150 to 500; and (C) a curing accelerator, in which the cyanate ester compound (A) is in an amount of 20 to 85% by mass per a total of 100% by mass of the components (A) and (B), and the cyanate ester compound (B) is in an amount of 15 to 80% by mass per the total of 100% by mass of the components (A) and (B).

Abstract: A resist composition is provided comprising a polymer comprising recurring units (a) having a succinimide structure and recurring units (b) containing a group capable of polarity switch with the aid of acid. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.

Abstract: A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution of a resin having a carbon content of at least 75 wt % in the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

Abstract: The invention provides a patterning process comprises the steps of: (1) forming a positive chemically amplifying type photoresist film on a substrate to be processed followed by photo-exposure and development thereof by using an organic solvent to obtain a negatively developed pattern, (2) forming a silicon-containing film by applying a silicon-containing film composition comprising a solvent and a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both, (3) insolubilizing in a solvent the silicon-containing film in the vicinity of surface of the negatively developed pattern, (4) removing the non-insolubilized part of the silicon-containing film to obtain an insolubilized part as a silicon-containing film pattern, (5) etching the upper part of the silicon-containing film pattern thereby exposing the negatively developed pattern, (6) removing the negatively developed pattern, and (7) transferring the silicon-containing film pattern to the substrate to be processed.

Abstract: Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

Abstract: There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the first silicone resin film unremoved; forming a second antireflection silicone resin film over the first silicone resin film; and forming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.

Abstract: Provided is a method of producing a high molecular weight organopolysiloxane with a polystyrene equivalent weight average molecular weight of at least 5×104, comprising the steps of producing an organopolysiloxane by subjecting a silane compound having a hydrolyzable group to a first hydrolysis and condensation, and then subjecting that organopolysiloxane to an additional second hydrolysis and condensation. The high molecular weight organopolysiloxane is stable, resistant to gelling, and resistant to cracking even when formed as a thick film. A resin composition comprising the high molecular weight organopolysiloxane and a condensation catalyst is useful for sealing an optical element and for producing an optical semiconductor device.

Abstract: A silicone rubber composition comprising (A) an organopolysiloxane containing at least two aliphatic unsaturated bonds, (B) an organopolysiloxane of resin structure comprising SiO2 units, R3nR4pSiO0.5 units and R3qR4rSiO0.5 units wherein R3 is vinyl or allyl, R4 is a monovalent hydrocarbon group free of aliphatic unsaturation, n is 2 or 3, p is 0 or 1, n+p=3, q is 0 or 1, r is 2 or 3, q+r=3, (C) an organohydrogenpolysiloxane having at least two SiH groups, and (D) a platinum catalyst cures into a silicone rubber having excellent rubbery and strength properties and little surface tack.

Abstract: A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.

Abstract: A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.

Abstract: There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains, at least, a polymer having a repeating unit represented by the following general formula (1). Thereby, there can be provided a resist lower layer film material for a multilayer-resist process, especially for a two-layer resist process, which functions as an excellent antireflection film especially for exposure with a short wavelength, namely has higher transparency, and has the optimal n value and k value, and is excellent in an etching resistance in substrate processing, and a method for forming a pattern on a substrate by lithography using it.

Abstract: Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is ?o? ?o?? ???? 0.5 ?m is selected.

Abstract: A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side.

Abstract: A silicone rubber coating composition which cures into a silicone rubber having a tear strength of 25-50 kN/m and a peeling bond strength of 30-60 N/cm is suited for coating of hollow weave type air bags. A hollow weave type air bag coated with the coating composition can be instantaneously inflated while the bag prevents the silicone rubber film from being peeled from the base fabric, eliminates inflating gas leakage, and retains an acceptable inflation time.

Abstract: Organohalosilanes are prepared by reacting metallic silicon particles with an organohalide in the presence of a copper catalyst. A contact mass composed of metallic silicon and copper catalyst contains an effective amount of a catalyst powder obtained by mechanical surface treatment of a powder mixture of tin powder and another metal, typically copper powder, on a ball mill, stamp mill, jet mill, mechanofusion device or the like.

Abstract: A liquid epoxy resin composition comprising (A) a liquid epoxy resin, (B) an aromatic amine curing agent comprising 5–100% by weight of a specific aromatic amine compound having a purity of at least 99%, (C) an inorganic filler, and (D) an ester organic solvent having a boiling point of 130–250° C. is useful for semiconductor encapsulation. The composition has an infiltration ability, adhesion to silicon chips, resistance to deterioration under hot humid conditions, and resistance to thermal shocks.

Abstract: There is disclosed an electrostatic holding apparatus in which a voltage is applied to an electrode formed of a conductive layer disposed on an insulator layer and covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The electrostatic holding apparatus is formed of a sintered body in which a thermal expansion mitigating layer is disposed between the insulating dielectric layer and the conductive layer and/or between the conductive layer and the insulator layer. The insulating dielectric layer, the conductive layer, the insulator layer, and the thermal expansion mitigating layer are superposed and press-formed in an unfired state to obtain a green body, which is then sintered to obtain the sintered body.

Abstract: After forming a resist film by coating a semiconductor substrate with a resist, pattern exposure is conducted by irradiating the resist film with ArF excimer laser with a mask used. A silylation agent of 4-dimethylsiloxy-3-penten-2-one is supplied onto the surface of the resist film having been subjected to the pattern exposure, thereby forming a silylated layer in an unexposed portion of the resist film. The resist film is etched by using the silylated layer as a mask, so as to remove an exposed portion of the resist film. Thus, a resist pattern can be formed out of the resist film.

Abstract: In a silicone rubber composition comprising an organopolysiloxane having at least two aliphatic unsaturated groups and a curing agent, thermal black and/or furnace black having a primary particle diameter of 50-500 nm and a DBP oil absorption of 20-50 cc/100 g is blended. There may be further blended an organopolysiloxane having an ionic group-bearing portion as an antistatic agent and/or a hydrocarbon insulating oil. The composition has a stable resistivity in the semiconductive region and thus is useful as semiconductive rolls.

Abstract: A hydroxy- or mercapto-bearing organic compound is caused to react with a polycarbodiimide compound in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The carbodiimide linkage in the polymer which results from the above-described reaction is crosslinked.