Abstract: A double side grinding apparatus comprises a pair of grinding wheels (4), work rotating device (1) and moving device (2).

Abstract: There is disclosed a polishing pad for mirror-polishing a semiconductor wafer, especially in a finish polishing process, by use of a polishing machine which includes a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad. The polishing pad includes a top layer formed of a porous soft material, a bottom layer formed of a rubber elastomer, and an intermediate layer formed of a hard plastic sheet. The hard plastic sheet is disposed between the top layer and the bottom layer and is bonded to the bottom layer. In the polishing pad, undulation produced in the bottom layer due to a horizontal force generated during polishing is prevented from being transferred to the top layer of the polishing pad, and unevenness in polishing stock removal stemming from warpage or undulation of a wafer itself can be mitigated.

Abstract: There is provided a heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated at an actually desired temperature regardless of the dopant concentration or resistivity of the object at the time of heat-treating the object with a radiant heating device using a radiation thermometer as a temperature detector. In the method, the object is heat-treated at an actually desired temperature by correcting the temperature of the object in accordance with the dopant concentration or resistivity of the object. In the apparatus, the dopant concentration or resistivity of the object is inputted in advance to a temperature controller and the controller calculates an actual temperature of the object by correcting and computing the temperature of the object detected with the radiation thermometer in accordance with the dopant concentration or resistivity of the object and controls the temperature of the object based on the calculated temperature value.

Abstract: An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.

Abstract: Dispersion of cracks in a crack layer across a ground surface is reduced in chamfering a semiconductor silicon wafer. The semiconductor silicon wafer is clamped by a clamp device, which is freely rotated and a polisher having the shape of a ring built in a polishing device, which is freely rotated, is disposed in a place, the polisher having a periphery shaping edge on a peripheral side surface, wherein the polishing device is moved in a radial direction of the wafer so as to position the periphery shaping edge close to the periphery of the wafer, and the wafer and the polishing device are rotated relatively to each other, while slurry containing suspension of abrasive grains is supplied to a narrow space therebetween from a slurry supply nozzle.