Abstract: A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.

Abstract: In a vapor phase growth apparatus for performing a vapor phase growth of a silicon epitaxial layer on a main surface of a silicon single crystal substrate while heating the silicon single crystal substrate placed on a pocket formed on a susceptor, from both sides, the pocket has an outer peripheral side part which supports a rear surface of the silicon single crystal substrate and an inner peripheral side part which is kept in a state of being more recessed than the outer peripheral side part in the inside of the outer peripheral side part, and the susceptor has a warped inverted U-shaped longitudinal sectional shape.

Abstract: There is provided a method of producing a bonded SOI wafer wherein a silicon single crystal ingot is grown according to Czochralski method, the single crystal ingot is then sliced to produce a silicon single crystal wafer, the silicon single crystal wafer is subjected to heat treatment in a non-oxidizing atmosphere at a temperature of 1100° C. to 1300° C. for one minute or more and continuously to a heat treatment in an oxidizing atmosphere at a temperature of 700° C. to 1300° C. for one minute or more without cooling the wafer to a temperature less than 700° C. to provide a silicon single crystal wafer wherein a silicon oxide film is formed on the surface, and the resultant wafer is used as the bond wafer, and a bonded SOI wafer produced by the method. There can be provided a SOI wafer that has a SOI layer having few crystal defects, good surface roughness and high quality in high productivity, in high yield and with low cost.

Abstract: An polishing apparatus which can effectively polish a bottom wall of a wafer in a notch portion is disclosed. The apparatus includes: a table for supporting the wafer thereon; a rotary buff having a thickness so that the periphery thereof can enter the notch portion of the wafer, and is rotated around an axis which is parallel with a plane of the surface of the wafer supported on the table; a first rotating member such as a motor for rotating the rotary buff; a linkage for supporting the rotary buff; an adjusting member such as a cylinder device for adjusting the pressure applied to the bottom wall of the wafer in the notch portion from the rotary buff; and a second rotating member for turning the table around a predetermined axis which is approximately parallel with the rotary axis of the rotary buff so that the applied pressure from the rotary buff acts on the bottom wall of the wafer in the notch portion in a direction approximately perpendicular to the surface of the bottom wall.

Abstract: A novel selector device for the determination of the conductivity-type in a semiconductor wafer utilizes the determination of the polarity of the electromotive force produced in the wafer by the Hall effect. The device comprises two pairs of probes in diagonal arrangement for supplying an electric current through the wafer and for detecting the electromotive force, respectively, by contacting the wafer surface, and a pair of permanent magnets positioned oppositely with the wafer in between to produce a magnetic field perpendicular to the wafer. One of the permanent magnets is located within the circumference determined by the probes.