Abstract: An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which hydrogen-diluted SiH.sub.4 and N.sub.2 O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition, wherein the degree of hydrogen dilution is from 10 to 20.
Type:
Grant
Filed:
May 28, 1993
Date of Patent:
February 21, 1995
Assignee:
Showa Shell Sekiku K.K.
Inventors:
Tetsuro Nii, Porponth Sichanugrist, Takahisa Kase