Abstract: A polishing apparatus has a conventional carrier with a plurality of floating subcarriers. The benefits of single wafer polishing are achieved with the economies of multiple wafer polishing by adding the plurality of floating subcarriers to the conventional carrier. Each subcarrier has a single wafer adhered to its underside. Axial freedom is provided to duplicate the dynamics of single wafer polishing. The required axial freedom is obtained by axially loading each subcarrier via a mechanical spring or via pneumatic/hydraulic devices. In two variations, each subcarrier is also allowed auto-rotational freedom. In another two variations, the subcarriers are rotationally driven. In all variations, the wafers adhered to the floating subcarriers are substantially uniformly polished and the total indicated reading of the maximum deviation on the wafer surface is improved.

Abstract: Infrared radiation is focused to a line at a site at which a semiconductor wafer is expected to appear when a wafer is transferred with, i.e., loaded onto or unloaded from, a semiconductor wafer conveyor. A cylindrical lens of selected focal length is positioned to receive and focus to a line at an image plane radiation reflected by a wafer arriving at the site. An apertured stop defines an opening at the image plane to pass reflected radiation to an infrared sensor positioned on the side of the stop opposite the cylindrical lens.

Abstract: Several embodiments of a replenishment arrangement for furnishing molten semiconductor material to furnaces for growing monocrystalline boules are described. A replenishment crucible within which a melt of the material from which the boules are to be grown is communicated either intermittently or continuously with a plurality of growth furnaces.

Abstract: Several embodiments of a replenishment arrangement for furnishing molten semiconductor material to furnaces for growing monocrystalline boules are described. A replenishment crucible within which a melt of the material from which the boules are to be grown is communicated either intermittently or continuously with a plurality of growth furnaces. The melt level in all of the growth crucibles is controlled by determining the level of molten material in the replenishment crucible.

Abstract: A conduit for high temperature transfer of molten semiconductor crystalline material consists of a composite structure incorporating a quartz transfer tube as the innermost member, with an outer thermally insulating layer designed to serve the dual purposes of minimizing heat losses from the quartz tube and maintaining mechanical strength and rigidity of the conduit at the elevated temperatures encountered. The composite structure ensures that the molten semiconductor material only comes in contact with a material (quartz) with which it is compatible, while the outer layer structure reinforces the quartz tube, which becomes somewhat soft at molten semiconductor temperatures. To further aid in preventing cooling of the molten semiconductor, a distributed, electric resistance heater is in contact with the surface of the quartz tube over most of its length. The quartz tube has short end portions which extend through the surface of the semiconductor melt and which are lef bare of the thermal insulation.

Abstract: A replenishment crucible is mounted adjacent the usual drawing crucible, from which a monocrystalline boule is drawn according to the Czochralski method. A siphon tube for molten semiconductor transfer extends from the replenishment crucible to the drawing crucible. Each crucible is enclosed within its own hermetic shell and is provided with its own heater. The siphon tube is initially filled with molten semiconductor by raising the inert atmospheric pressure in the shell surrounding the replenishment crucible above that surrounding the drawing crucible. Thereafter, adjustment of the level of molten semiconductor in the drawing crucible may be achieved by adjusting the level in either crucible, since the siphon tube will establish the same level in both crucibles. For continuous processing, solid semiconductor may be added to and melted in the replenishment crucible during the process of drawing crystals from the drawing crucible.

Abstract: A carrier for semiconductor wafers to be polished is described, as well as mounting structure for securing the carrier within a polishing machine. The carrier is a relatively thick metal plate having on one of its faces, a sheet of material to which wafers can be adhered. An annular flange is on its opposite face to receive pressure loading from the polishing machine during the wafer polishing operation. Radially extending webs connect the annular flange with that area of the plate to distribute the pressure loading over substantially the full area of the plate opposed to the area on the opposite face on which wafers are to be adhered. An arrangement is included in the holder of the polishing machine for the carrier which applies a vacuum to the carrier to maintain the carrier selectively on the polishing machine, which arrangement releases the vacuum during the polishing operation and also enables simple intentional removal of the carrier.

Abstract: Semiconductor wafer polishing apparatus is described having a sheet of wafer mounting material on its carrier to rigidly hold a plurality of wafers to be polished during the polishing operation. The mounting material includes a lamina of a polymeric material which exhibits surface wetting characteristics to aid in adhering the back side of wafers thereto and a lamina of a volume compressible material which absorbs without wafer deformation any asperities on the back side of such wafers.

Abstract: A crystal growing furnace is provided wherein the molten material in the crucible is replaced constantly as it is withdrawn by a monitoring system which automatically maintains the level in the crucible at a desired point. A replaceable cannister system is also provided so that the level can be maintained indefinitely by replacing the cannisters.