Patents Assigned to SLT TECHNOLOGIES, INC.
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Patent number: 11898269Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)?c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm?3, an impurity concentration of oxygen between about 2×1017 cm?3 and about 1×1020 cm?3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm?3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.Type: GrantFiled: May 6, 2020Date of Patent: February 13, 2024Assignee: SLT Technologies, Inc.Inventors: Wenkan Jiang, Dirk Ehrentraut, Mark P. D'Evelyn
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Publication number: 20230317444Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: ApplicationFiled: June 8, 2023Publication date: October 5, 2023Applicant: SLT Technologies, Inc.Inventors: Wenkan JIANG, Mark P. D'EVELYN, Derrick S. KAMBER, Dirk EHRENTRAUT, Jonathan D. COOK, James WENGER
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Publication number: 20230295839Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: ApplicationFiled: March 17, 2023Publication date: September 21, 2023Applicant: SLT Technologies, Inc.Inventors: Keiji FUKUTOMI, Wenkan JIANG, Motoi TAMAKI, Mark P. D'EVELYN
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Patent number: 11721549Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: GrantFiled: February 10, 2021Date of Patent: August 8, 2023Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark P. D'Evelyn, Wenkan Jiang, Drew W. Cardwell, Dirk Ehrentraut
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Patent number: 11705322Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.Type: GrantFiled: May 22, 2020Date of Patent: July 18, 2023Assignee: SLT TECHNOLOGIES, INC.Inventors: Wenkan Jiang, Mark P. D'Evelyn, Derrick S. Kamber, Dirk Ehrentraut, Jonathan D. Cook, James Wenger
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Patent number: 11661670Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: GrantFiled: December 23, 2020Date of Patent: May 30, 2023Assignee: SLT Technologies, IncInventors: Mark P. D'Evelyn, Drew W. Cardwell, Jonathan D. Cook
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Patent number: 11466384Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate.Type: GrantFiled: January 7, 2020Date of Patent: October 11, 2022Assignee: SLT Technologies, Inc.Inventors: Mark P. D'Evelyn, Derrick S. Kamber
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Patent number: 11453956Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.Type: GrantFiled: August 26, 2019Date of Patent: September 27, 2022Assignee: SLT Technologies, Inc.Inventors: Mark P. D'Evelyn, James S. Speck, Derrick S. Kamber, Douglas W. Pocius
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Patent number: 11444216Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.Type: GrantFiled: July 15, 2020Date of Patent: September 13, 2022Assignee: SLT Technologies, Inc.Inventors: Drew W. Cardwell, Mark P. D'Evelyn
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Publication number: 20210222317Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: ApplicationFiled: December 23, 2020Publication date: July 22, 2021Applicant: SLT Technologies, IncInventors: Mark P. D'EVELYN, Drew W. CARDWELL, Jonathan D. COOK
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Patent number: 11047041Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: GrantFiled: March 10, 2020Date of Patent: June 29, 2021Assignee: SLT TECHNOLOGIES, INC.Inventors: Douglas W. Pocius, Derrick S. Kamber, Mark P. D'Evelyn, Jonathan D. Cook
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Patent number: 10975492Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: GrantFiled: January 11, 2019Date of Patent: April 13, 2021Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Patent number: 10648102Abstract: Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) ?c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm?3; an impurity concentration of oxygen between about 2×1017 cm?3 and about 1×1020 cm?3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1×1016 cm?3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.Type: GrantFiled: January 9, 2018Date of Patent: May 12, 2020Assignee: SLT TECHNOLOGIES, INC.Inventors: Wenkan Jiang, Dirk Ehrentraut, Mark P. D'Evelyn
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Patent number: 10619239Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.Type: GrantFiled: June 29, 2018Date of Patent: April 14, 2020Assignee: SLT TECHNOLOGIES, INC.Inventors: Douglas W. Pocius, Derrick S. Kamber, Mark P. D'Evelyn, Jonathan D. Cook
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Patent number: 10604865Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.Type: GrantFiled: June 26, 2018Date of Patent: March 31, 2020Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark P. D'Evelyn, Dirk Ehrentraut, Derrick S. Kamber, Bradley C. Downey
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Patent number: 10301745Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.Type: GrantFiled: August 2, 2016Date of Patent: May 28, 2019Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark P. D'Evelyn, Dirk Ehrentraut, Wenkan Jiang, Bradley C. Downey
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Patent number: 10293318Abstract: A pressure release mechanism for use with a capsule for processing materials or growing crystals in supercritical fluids is disclosed. The capsule with the pressure release mechanism is scalable up to very large volumes and is cost effective according to a preferred embodiment. In conjunction with suitable high pressure apparatus, the capsule with pressure release mechanism is capable of processing materials at pressures and temperatures of 20-2000 MPa and 25-1500° C., respectively. Of course, there can be other variations, modifications, and alternatives.Type: GrantFiled: September 19, 2016Date of Patent: May 21, 2019Assignee: SLT TECHNOLOGIES, INC.Inventors: Mark Philip D'Evelyn, Rajeev Tirumala Pakalapati
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Patent number: 10174438Abstract: An apparatus for processing material at elevated pressure, the apparatus comprising: (a) two or more radial restraint structures defining an interior region configured to receive a processing chamber, the radial restraint structures being configured to resist an outward radial force from the interior region; (b) upper and lower crown members being disposed axially on either end of the interior region and configured to resist an outward axial force from the interior region; (c) a first axial restraint structure coupling the upper crown member and the lower crown member to provide axial restraint of the upper crown member and the lower crown; and (d) a second axial restraint structure compressing the two or more radial restraint structures to provide an axial restraint of the two or more radial restraint structures.Type: GrantFiled: March 30, 2017Date of Patent: January 8, 2019Assignee: SLT TECHNOLOGIES, INC.Inventors: Rajeev Tirumala Pakalapati, Mark P. D'Evelyn
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Patent number: 10145021Abstract: An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.Type: GrantFiled: July 28, 2011Date of Patent: December 4, 2018Assignee: SLT TECHNOLOGIES, INC.Inventors: Kirsh Afimiwala, Larry Zeng
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Patent number: RE49677Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.Type: GrantFiled: September 4, 2020Date of Patent: October 3, 2023Assignee: SLT Technologies, IncInventors: Mark P. D'Evelyn, Michael Ragan Krames