Abstract: The present invention relates to a filter circuit (100) comprising a first and a second bulk acoustic wave resonator (2, 3), the first resonator (2) having a first piezoelectric layer (4) structured such that the first resonator (2) has a lower resonant frequency than the second resonator (3), wherein the first piezoelectric layer (4) is structured by recesses (14) passing through the first piezoelectric layer (4), the first resonator (2) and the second resonator (3) as series resonators (102, 105) connected in series with a signal path of the filter circuit (100) or wherein the first resonator (2) and the second resonator (3) as parallel resonators (103, 106) are connected to the signal path of the filter circuit (100) in such a way that in each case one electrode of the resonators is connected to the signal path.

Abstract: A reconfigurable microacoustic filter is specified which comprises a ladder-type-like filter topology and a suitably placed adjustable capacitive element.

Abstract: A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M1, M2) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

Abstract: The invention relates to a simple to produce electric component for chips with sensitive component structures. Said component comprises a connection structure and a switching structure on the underside of the chip and a support substrate with at least one polymer layer.

Abstract: The present invention relates to a module that has a lower component of a module (1) having a material (3) in which at least one first structural element (4) is embedded, and an upper component of a module (2) having a material (3) in which at least a second component (16) is embedded. The upper component of the module (2) and the lower component of the module (1) are stacked, with the lower and the upper component of the module (2) being electrically connected and mechanically linked to each other. In addition, the present invention relates to a simple and cost-effective process for the production of a variety of modules. The invention makes it possible for the modules to be miniaturized with respect to surface and height and/or makes it possible to achieve greater integration by 3D packaging.

Abstract: The invention relates to a covering (1) for an electronic component (e.g. of the MEMS, BAW, or SAW type). The covering comprises at least one layer (5, 6, 7) having a structure (19, 20, 21) with a number of prominences (8, 9, 15) and/or depressions (10, 11, 16). The invention furthermore relates to a method for producing a covering (1) of this type.

Abstract: In order to improve heat dissipation from electrical components with heat-generating component structures, it is proposed to provide a radiation layer with a large surface in the area of the component structures. Preferably, the radiation layer is very heat-conductive or in heat-conductive connection with the component structures.

Abstract: An RF filter is disclosed. In an embodiment, the RF filter includes series-interconnected basic elements, each basic element having an electroacoustic resonator and impedance converters interconnected in series between the basic elements, wherein the impedance converters are impedance inverters and/or admittance inverters, and wherein the resonators of the basic elements are either only series resonators or only parallel resonators.

Abstract: An RF module with improved testing capabilities is provided. The module has a first switch with signal outputs and an additional auxiliary connection connected to an auxiliary terminal. The auxiliary terminal can be connected to an RF filter while a power amplifier is decoupled from the filter.

Abstract: A filter comprising first and second BAW resonators. The first BAW resonator having a piezoelectric layer, located between a top electrode and a bottom electrode, and a dielectric layer located between the bottom electrode and an additional electrode. Wherein the dielectric layer, the bottom electrode and the additional electrode are configured to provide an additional capacitance in the resonator. The second BAW resonator having at least one less electrode than the first BAW resonator.

Abstract: A duplexer is disclosed. In an embodiment, the duplexer includes a Tx filter and an Rx filter, wherein the Tx filter includes first series-interconnected basic elements, each first basic element having a first electroacoustic resonator and first impedance converters interconnected in series between the first basic elements, wherein the Rx filter comprises second series-interconnected basic elements, each second basic element having a second electroacoustic resonator and second impedance converters interconnected in series between the second basic elements, wherein the first impedance converters in the Tx filter are impedance inverters, wherein the first resonators of the first basic elements in the Tx filter are only series resonators, wherein the second impedance converters in the Rx filter are admittance inverters, and wherein the second resonators of the second basic elements in the Rx filter are only parallel resonators.

Abstract: A reconfigurable multiplexer including a plurality of filter and/or duplexers, each respectively associated with a frequency band and can be connected to an antenna connector via a band switch individually or several at the same time. One or more phase shifters capable of adjusting a phasing of a filter or duplexer during a multiplex mode so as to improve the interband insulation in a given multiplex mode. A variable notch can be connected to one of the filters or partial filters of a duplexer.

Abstract: In order to improve heat dissipation from electrical components with heat-generating component structures, it is proposed to provide a radiation layer with a large surface in the area of the component structures. Preferably, the radiation layer is very heat-conductive or in heat-conductive connection with the component structures.

Abstract: This disclosure provides systems, methods and apparatus for microspeaker devices. In one aspect, a microspeaker element may include a deformable dielectric membrane that spans a speaker cavity. The deformable dielectric membrane can include a piezoactuator and a dielectric layer. Upon application of a driving signal to the piezoactuator, the dielectric layer can deflect, producing sound. In some implementations, an array of microspeaker elements can be encapsulated between a glass substrate and a cover glass. Sound generated by the microspeaker elements can be emitted through a speaker grill formed in the cover glass.

Abstract: A filter arrangement with a large bandwidth is specified, wherein a first and a second filter are connected in parallel between a first and a second node. Both filters are configured as DMS filters and both comprise two DMS tracks each, connected in series. The two filters have different center frequencies and create a common passband together.

Abstract: A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

Abstract: In order to suppress an interference frequency in a ladder-type filter, an additional resonator (RZ1) that acts as a capacitance is connected in parallel to a series resonator (S1). The antiresonance of the additional resonator creates an additional pole in order for the interference frequency to be attenuated more effectively.

Abstract: An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a transversal velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode. A dielectric material with a periodic structure contributes to the formation of the periodic structure of the velocity profile.

Abstract: The invention relates to an HF circuit, for example for use in front-end circuits, having improved signal quality in carrier aggregation. According to the invention, a signal path between a duplexer and a diplexer comprises a phase shifter.

Abstract: Example implementations of a bulk acoustic wave resonator with an optimized outer perimeter are disclosed. In an example aspect, a resonator includes a truncated-ellipsoid-shaped active region. The active region includes an outer electrode disposed as a first layer of the active region. The active layer also includes a piezoelectric layer disposed as a second layer of the active region with the piezoelectric layer disposed interior to the outer electrode. The active layer further includes an inner electrode disposed as a third layer of the active region with the inner electrode disposed interior to the piezoelectric layer.