Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al2Ga1N3. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2 or Al5Ga7N12.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al7Ga5N12, and each extending direction of the stratiform regions is inclined with respect to the upper surface of the n-type layer.

Abstract: To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element.

Abstract: The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.

Abstract: The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm3.

Abstract: A template includes a sapphire substrate with a (0001) plane or a plane inclined by a predetermined angle with respect to the (0001) plane as a main surface, and an AlN layer composed of AlN crystals having an epitaxial crystal orientation relationship with the main surface directly formed on the main surface of the sapphire substrate. In the template, an average particle diameter of the AlN crystals of the AlN layer at a thickness of 20 nm from the main surface is 100 nm or less.

Abstract: To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element.

Abstract: A template includes a sapphire substrate with a (0001) plane or a plane inclined by a predetermined angle with respect to the (0001) plane as a main surface, and an AlN layer composed of AlN crystals having an epitaxial crystal orientation relationship with the main surface directly formed on the main surface of the sapphire substrate. In the template, an average particle diameter of the AlN crystals of the AlN layer at a thickness of 20 nm from the main surface is 100 nm or less.

Abstract: The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.

Abstract: Provided is an ultraviolet light emitting device having high quality and high reliability that prevents deterioration in electrical characteristics caused by a photochemical reaction of a non-bonding amorphous fluororesin, decomposition or the like of the amorphous fluororesin, and peeling off of the amorphous fluororesin. A nitride semiconductor ultraviolet light emitting device 1 includes a base 30, a nitride semiconductor ultraviolet light emitting element flip-chip mounted on the base 30, and an amorphous fluororesin 40 that is in direct contact with the nitride semiconductor ultraviolet light emitting element for covering. The nitride semiconductor ultraviolet light emitting element includes a sapphire substrate 11, a plurality of AlGaN-based semiconductor layers 12 laminated on the main surface of the sapphire substrate 11, an n-electrode 13, and a p-electrode 14.

Abstract: The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm3.

Abstract: A light-emitting device 1 comprises a base 30, a nitride semiconductor light-emitting element 10 flip-chip mounted on the base 30, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element 10. The light-emitting device 1 comprises a deformation-prevention layer 60 for preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device 1, and the deformation-prevention layer 60 is formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

Abstract: A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprises a first step of forming an n-type semiconductor layer composed of an n-type AlXGa1-XN-based semiconductor (1?X?0.5) on an upper surface of an underlying portion including a sapphire substrate, a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an AlYGa1-YN-based semiconductor (X>Y>0) and that is composed of an AlGaN-based semiconductor as a whole, and a third step of forming a p-type semiconductor layer composed of a p-type AlZGa1-ZN-based semiconductor (1?Z>Y) above the active layer. In the manufacturing method, a growth temperature at the second step is higher than 1200° C. and equal to or higher than a growth temperature at the first step.

Abstract: A nitride semiconductor ultraviolet light-emitting element 1 comprises a sapphire substrate 10 and an element structure part 20 formed on a main surface 101 of the substrate 10. In the substrate 10, in a first portion 110 extending from the main surface 101 by a first distance, a sectional area of a cross section parallel to the main surface 101 continuously increases with distance from the main surface 101, and in a second portion 120 extending from a side opposite to the main surface 101 by a second distance, a sectional area of a cross section parallel to the main surface 101 continuously increases with distance from the side opposite to the main surface 101. The sum of the first distance and the second distance is equal to or less than the thickness of the substrate 10.

Abstract: To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a base 10 that comprises an insulating base material 11 and two or more metal films 12 and 13 that are formed on one side of the insulating base material 11 and electrically separated from each other. The two or more metal films are formed to include an upper surface and a side wall surface that are covered by gold or a platinum group metal, to be capable of mounting thereon one or more nitride semiconductor light-emitting elements and the like, and to have, as a whole, a predetermined planar view shape including two or more electrode pads.

Abstract: A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.

Abstract: To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, there is provided a nitride semiconductor wafer having ultraviolet light-emitting elements on a substrate 12, each element including a semiconductor laminated portion 21 constituted by an n-type AlGaN layer 16, an active layer 17 composed of an AlGaN layer, and p-type AlGaN layers 19 and 20, an n-electrode 23, a p-electrode 22, a protective insulating film 24, first and second plated electrodes 25 and 26, and a fluororesin film 27. The p-electrode is formed on an upper surface of the p-type AlGaN layer in the first region R1 and the n-electrode is formed on an upper surface of the n-type AlGaN layer in the second region R2. The protective insulating film has openings for exposing at least parts of the n-electrode and the p-electrode.

Abstract: A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprises a first step of forming an n-type semiconductor layer composed of an n-type AlXGa1-XN-based semiconductor (1?X?0.5) on an upper surface of an underlying portion including a sapphire substrate, a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an AlYGa1-YN-based semiconductor (X>Y>0) and that is composed of an AlGaN-based semiconductor as a whole, and a third step of forming a p-type semiconductor layer composed of a p-type AlZGa1-ZN-based semiconductor (1?Z>Y) above the active layer. In the manufacturing method, a growth temperature at the second step is higher than 1200° C. and equal to or higher than a growth temperature at the first step.

Abstract: A nitride semiconductor ultraviolet light emitting device 1 is configured such that a nitride semiconductor ultraviolet light emitting element 10 is mounted on a base 30 by flip-chip mounting and sealed with an amorphous fluororesin whose terminal functional group is perfluoroalkyl group. The nitride semiconductor ultraviolet light emitting element 10 includes a sapphire substrate 11, a semiconductor laminated portion 12 of an AlGaN-based semiconductor laminated on a front surface of the sapphire substrate 11, an n electrode 13, a p electrode 14 and a back surface covering layer 15 which is formed on a back surface of the sapphire substrate 11 and transmits ultraviolet light.

Abstract: A nitride semiconductor ultraviolet light-emitting element comprises an underlying portion that includes a substrate that is composed of sapphire and has a surface inclined to a (0001) surface so as to form a multi-step terrace, and an AlN layer formed on a surface of the substrate, and a light-emitting portion that is formed on a surface of the underlying portion and includes an active layer having an AlGaN based semiconductor layer. At least the AlN layer of the underlying portion, the active layer of the light-emitting portion, and each layer between the AlN layer and the active layer are formed by step flow growth in which a side surface of a multi-step terrace grows so as to achieve two-dimensional growth. The active layer has a quantum well structure including at least a well layer composed of AlGaN. The average roughness of a 25 ?m by 25 ?m region on a surface of the active layer is a thickness of the well layer or more and 10 nm or less.