Abstract: Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a substrate and undesired portions of the deposited thin film or thin films are removed to produce processed elements with reduced characteristic dimensions. Graphene layers are generated on selected processed elements or exposed portions of the substrate after removal of the processed elements. Multiple sets of graphene layers can be generated, each with a different physical characteristic, thereby producing a graphite-based device with multiple functionalities in the same device.

Abstract: A method of forming a graphite-based structure on a substrate comprises patterning the substrate thereby forming a plurality of elements on the substrate. Each respective element in the plurality of elements is separated from an adjacent element on the substrate by a corresponding trench in a plurality of trenches on the substrate and each respective element in the plurality of elements has a corresponding top surface. The method further comprises segmentedly depositing a graphene initiating layer onto the top surface of each respective element in the plurality of elements; and generating graphene using the graphene initiating layer thereby forming the graphite-based structure.

Abstract: Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a substrate and undesired portions of the deposited thin film or thin films are removed to produce processed elements with reduced characteristic dimensions. Graphene layers are generated on selected processed elements or exposed portions of the substrate after removal of the processed elements. Multiple sets of graphene layers can be generated, each with a different physical characteristic, thereby producing a graphite-based device with multiple functionalities in the same device.

Abstract: Methods for forming integrated graphite-based structures with interconnections between leads and graphene layers are provided. A substrate is patterned to form a plurality of elements on the substrate. A trench separates a first element from an adjacent element in the plurality of elements. A lead is deposited on a side wall of the first element, and a layer from the top of the first element is removed to expose a portion of the lead. Both the deposition of the lead and removal of a layer from the top of the first element are conducted before generation of graphene layers on the top of the first element and the bottom of the trench. Thus, an integrated graphite-based structure having spatially isolated but electrically connected graphene layers is formed.

Abstract: Methods for forming graphite-based structures (302, 304), in which a substrate is patterned to form a plurality of elements (104, 208) on the substrate (102), are provided. A trench separates a first element from an adjacent element in the plurality. The surface of the first element and the surface of the trench (i) are respectively characterized by different first and second elevations and (ii) are separated by a side wall of the first element. Orthogonal projections of the surface of the first element and the surface of the trench onto a common plane are contiguous or overlapping. In the method, a first graphene layer (302) on the entire first surface and a second graphene layer (304) on the entire second surface are concurrently generated. The second graphene layer has a thickness that is less than a difference between the first and second elevations. Thus, a graphite-based structure having isolated first and second graphene layers is formed.

Abstract: An integrated graphene-based structure comprises an N-dimensional array of elements formed on a surface of a substrate. The N-dimensional array of elements includes a plurality of rows. Each respective row in the plurality of rows comprises a corresponding plurality of elements formed along a first dimension. Each element in the corresponding plurality of elements comprising at least one graphene stack and separated from an adjacent element along the first dimension by a first average spatial separation thereby resulting in a first periodicity in lateral spacing along the first dimension. Each respective row in the plurality of rows is separated from an adjacent row along a second dimension by a second average spatial separation, thereby resulting in a second periodicity in lateral spacing along the second dimension. The N-dimensional array exhibits a set of characteristic electromagnetic interference properties in response to electromagnetic radiation incident on the N-dimensional array.

Abstract: An integrated graphene-based structure comprises an N-dimensional array of elements formed on a surface of a substrate. The N-dimensional array of elements includes a plurality of rows. Each respective row in the plurality of rows comprises a corresponding plurality of elements formed along a first dimension. Each element in the corresponding plurality of elements comprising at least one graphene stack and separated from an adjacent element along the first dimension by a first average spatial separation thereby resulting in a first periodicity in lateral spacing along the first dimension. Each respective row in the plurality of rows is separated from an adjacent row along a second dimension by a second average spatial separation, thereby resulting in a second periodicity in lateral spacing along the second dimension. The N-dimensional array exhibits a set of characteristic electromagnetic interference properties in response to electromagnetic radiation incident on the N-dimensional array.

Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

Abstract: Non-planar graphite-based devices are provided. A non-planar graphite-based device comprises a substrate with a plurality of zones and one or more graphene stacks formed in a selected zone in the plurality of zones. Each graphene stack in the one or more graphene stacks comprises at least one non-planar graphene layer that is characterized by a bending angle, a curvature, a characteristic dimension, a graphene orientation, a graphene type, or any combination of these characteristics. In some cases, a graphene stack comprises a plurality of graphene layers, and at least one graphene layer in the plurality of graphene layers has a characteristic dimension that is different than that of another graphene layer in the plurality of graphene layers. Fabrication methods of such non-planar graphite-based devices are also provided.

Abstract: A graphite-based device comprising a substrate having a plurality of zones and a plurality of graphene stacks thereon is provided. A first graphene stack in the plurality of graphene stacks is formed in a first zone in the plurality of zones and comprises a non-planar graphene layer having a first portion and a second portion. The first portion and the second portion collectively define a first bending angle. A is feature formed in the first zone. The feature comprises a first surface facing in a first direction and an adjacent second surface facing in a second direction. The first direction is other than the second direction. The first portion of the non-planar graphene layer overlays the first surface of the feature. The second portion of the non-planar graphene layer overlays the second surface of the feature.

Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

Abstract: A graphite-based device comprising a substrate with a plurality of zones and one or more graphene stacks overlaying the zones is provided. A first zone comprises a plurality of surfaces. A first surface is adjacent to a second surface in the plurality of surfaces. The one or more graphene stacks comprise a first graphene stack in the first zone. The first graphene stack comprises a plurality of graphene layers, a first of which is formed on the first surface. The first graphene layer is either planar or non-planar. A second graphene layer in the plurality of graphene layers comprises a first portion formed on a top surface of the first graphene layer, a second portion formed on the second surface and a first intermediate portion connecting the first and second portions. The second graphene layer is non-planar. The first and second graphene layers have different characteristic dimensions and different bandgaps.

Abstract: Methods for forming graphite-based structures, in which a substrate is patterned to form a plurality of elements on the substrate, are provided. A trench separates a first element from an adjacent element in the plurality. The surface of the first element and the surface of the trench (i) are respectively characterized by different first and second elevations and (ii) are separated by a side wall of the first element. Orthogonal projections of the surface of the first element and the surface of the trench onto a common plane are contiguous or overlapping. In the method, a first graphene layer on the entire first surface and a second graphene layer on the entire second surface are concurrently generated. The second graphene layer has a thickness that is less than a difference between the first and second elevations. Thus, a graphite-based structure having isolated first and second graphene layers is formed.