Abstract: A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.

Abstract: A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Abstract: A method for simultaneously tempering and coating glass, including heating a glass substrate, depositing a textured buffer layer on the glass substrate, depositing a material on the buffer layer, depositing O2, and rapidly cooling the glass substrate by introducing a gas. This includes coating the glass substrate with crystalline sapphire or a low E film, for example.

Abstract: A method of making a CZTS/inorganic thin-film tandem solar cell including depositing a textured buffer layer on a substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, and depositing additional elements in CZTS forming a CZTS layer based on the metal from the metal-inorganic film, the metal being incorporated into the CZTS film.

Abstract: A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS2, and SnS3—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.

Abstract: A method is provided for depositing textured wide bandgap materials, such as polymers or perovskites, on a textured transparent conducting oxide on inorganic thin-film, which serves as a recombination layer, or interfacial conducting layer (ICL), for tandem or multi junction solar cells.

Abstract: A device and method of making an amorphous-silicon/inorganic thin film tandem solar cell including the steps of depositing a textured oxide buffer layer on an amorphous substrate, depositing a crystalline inorganic semiconductor film from a eutectic alloy on the buffer layer, and depositing an amorphous film on the crystalline inorganic film, the amorphous film forming a p-n junction with the crystalline inorganic semiconductor for a solar cell device.

Abstract: A method of making a copper oxide/inorganic thin film tandem semiconductor device including the steps of: depositing a textured buffer layer on an amorphous substrate, depositing a copper-inorganic film from a solid phase eutectic alloy on said buffer layer, and introducing O2 to the copper on said inorganic film, forming a copper oxide thin film on said inorganic film.

Abstract: A bi-facial tandem solar cell and a method of making a non-toxic perovskite/inorganic thin-film tandem solar cell stable, having matching bandgaps and a hysteresis free design including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer wherein said perovskite layer is stable, hysteresis-free, and has a bandgap that matches the bandgap of the metal-inorganic.

Abstract: A method of making a CIGS/inorganic thin film tandem semiconductor device including the steps of depositing a textured buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being selected from a group of CIGS elements, and adding the remaining CIGS elements to the metal, thereby growing a CIGS film on the inorganic film for the tandem semiconductor device.

Abstract: Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.

Abstract: A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.

Abstract: Architectures for tandem solar cell including two thin films forming a top layer and a bottom layer. Such cells can be bi-facial. Exemplary materials used for the top layer are CIGS (CGS), perovskites (Sn and Ge), amorphous silicon (a-Si), copper oxide, tin sulfide, CZTS and III-V materials. For the bottom layer an inorganic film such as either silicon or germanium may be used. In general, the architecture includes of a glass, plastic or metal substrate and a buffer layer, either an oxide insulator or nitride conductor.

Abstract: A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

Abstract: A method is provided for manufacturing ceramic glass, including sapphire glass, for use in display covers in smartphones, computers, and watches, as well as for use as substrates on which semiconductor films can be deposited for a wide range of electronic applications, including solar cells, LEDs, and FETs.

Abstract: A bi-facial tandem solar cell and a method of making a non-toxic perovskite/inorganic thin-film tandem solar cell stable, having matching bandgaps and a hysteresis free design including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer wherein said perovskite layer is stable, hysteresis-free, and has a bandgap that matches the bandgap of the metal-inorganic.

Abstract: A method for making ceramic glass that is textured, hard, transparent and conducting, for use in various electronic devices and displays, such as LEDs, solar cells, the covers of solar panels, CICs used in satellites, smartphones, and computer displays. The ceramic glass can also be used for window shields in automobiles, and in any other industries where anti-scratch glass is beneficial. The ceramic glass is composed of ultra-thin layers which reduces the cost of manufacturing, and provides advantageous properties such as smoothness for stringent electronic device fabrication requirements.

Abstract: A method for annealing thin-films of ceramics such as Al2O3 on glass by laser such that the underlying glass substrate is unaffected by the laser heating. This is accomplished by applying a thin MgO buffer layer to the glass, depositing an amorphous ceramic layer on the textured transparent buffer layer, and annealing the ceramic layer with a heated line source. The ceramic layer crystallizing forming a ceramic coated substrate. The buffer layer is also textured which serves to induce texture in the Al2O3 film deposited on the buffer layer. The induced texture on the Al2O3 provides advantageous properties. The ceramic glass can be used for a variety of applications such as covers to solar panels, CICs used in satellites, displays, automobile windows, and substrates for LEDs.

Abstract: A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Abstract: A method of making a non-toxic perovskite/inorganic thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer.