Abstract: The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.

Abstract: A slurry composition for chemical mechanical polishing, including 0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of an additive selected from amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent, with the balance being a solvent, is provided. The slurry composition for chemical mechanical polishing has a conspicuously high polishing rate for silicon oxide films, is capable of selectively preventing the removal of silicon nitride films, does not cause an imbalance in polishing, gives an excellent degree of planarization, has excellent stability over time and dispersion stability, causes less generation of particles and scratches, and produces very satisfactory polished surfaces of barrier metal films and oxide films.

Abstract: The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.

Abstract: An etching composition that includes, based on the total weight of the etching composition, from about 0.05% to about 15% by weight of a halogen-containing compound, from about 0.1% to about 20% by weight of a nitrate compound, from about 0.1% to about 10% by weight of an acetate compound, from about 0.1% to about 10% by weight of a cyclic amine compound, from about 0% to about 50% by weight of a polyhydric alcohol, and a remainder of water.

Abstract: Provided is a reagent composition for measuring moisture content in a lithium secondary battery electrolyte, more particularly, a reagent composition for measuring moisture content in a lithium secondary battery electrolyte, containing imidazole, iodine, sulfur dioxide, and an amide based solvent, so that the reagent composition can suppress side reactions to thereby accurately measure a small amount of moisture content.

Abstract: Provided are a method for measuring hydrofluoric acid content in a lithium secondary battery electrolyte and an analytical reagent composition used in the same.

Abstract: The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.

Abstract: Provided are an electrolyte solution for lithium secondary battery, which includes dipentaerythritol hexaacrylate and a (meth)acrylate compound having a C4 to C12 linear or branched alkyl group as electrolyte additives, and a lithium secondary battery including the electrolyte solution. The electrolyte solution can improve the safety of the battery, and the performance characteristics, particularly cycle life characteristics, of the battery.

Abstract: A slurry composition for chemical mechanical polishing, including 0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of an additive selected from amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent, with the balance being a solvent, is provided. The slurry composition for chemical mechanical polishing has a conspicuously high polishing rate for silicon oxide films, is capable of selectively preventing the removal of silicon nitride films, does not cause an imbalance in polishing, gives an excellent degree of planarization, has excellent stability over time and dispersion stability, causes less generation of particles and scratches, and produces very satisfactory polished surfaces of barrier metal films and oxide films.

Abstract: Provided are an electrolyte additive represented by the following formula (1), an electrolyte solution containing the electrolyte additive, and a lithium secondary battery including the electrolyte solution: The electrolyte solution containing the electrolyte additive can enhance the normal-temperature and high-temperature lifetime characteristics of the battery to be equivalent or superior to the characteristics of conventional batteries, and can extend the service life of the battery.