Abstract: A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.
Type:
Grant
Filed:
September 16, 2015
Date of Patent:
November 28, 2017
Assignees:
SK Hynix Inc., SOULBRAIN SIGMA-ALDRICH, LTD
Abstract: Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
Type:
Grant
Filed:
January 7, 2010
Date of Patent:
March 4, 2014
Assignee:
Soulbrain Sigma-Aldrich Ltd.
Inventors:
Jae Sun Jung, Su Hyong Yun, Minchan Kim, Sung Won Han, Yong Joo Park, Su Jung Shin, Ki Whan Sung, Sang Kyung Lee