Abstract: A method of passivating semiconductor devices using existing tools of junction isolation and phosphosilicate glass (PSG)/borosilicate glass (BSG) etch via room temperature wet chemical growth (RTWCG) processes is provided. Back side processing of the semiconductor device achieves passivation and junction isolation in a single step, while front side processing achieves passivation, PSG/BSG etch, anti-reflection coating and potential induced degradation (PID) mitigation simultaneously. A modified solar cell fabrication method is then provided by integrating the passivation formation method into conventional solar cell manufacturing systems. The resulting solar cells comprise a semiconductor substrate having a front surface and a back surface. The front surface is coated with a SiOx layer less than 50 nm thick, over which a SiNx layer is deposited. On the back surface, another SiOx layer is coated. Experimental data shows high efficiency and mitigated PID of the solar cells.

Abstract: A method of passivating semiconductor devices using existing tools of junction isolation and phosphosilicate glass (PSG)/borosilicate glass (BSG) etch via room temperature wet chemical growth (RTWCG) processes is provided. Back side processing of the semiconductor device achieves passivation and junction isolation in a single step, while front side processing achieves passivation, PSG/BSG etch, anti-reflection coating and potential induced degradation (PID) mitigation simultaneously. A modified solar cell fabrication method is then provided by integrating the passivation formation method into conventional solar cell manufacturing systems. The resulting solar cells comprise a semiconductor substrate having a front surface and a back surface. The front surface is coated with a SiOx layer less than 50 nm thick, over which a SiNx layer is deposited. On the back surface, another SiOx layer is coated. Experimental data shows high efficiency and mitigated PID of the solar cells.

Abstract: Disclosed is a method for making low metallic impurity SiO-based dielectric thin films on semiconductor substrates using a room temperature wet chemical growth (RTWCG) process for electronic and photonic (optoelectronic) device applications. The process comprises soaking the semiconductor substrate into the growth solution. The process utilizes a mixture of aqueous inorganic or organic based silicon source solution, an inorganic reduction oxidation (redox) aqueous solution, non-invasive inorganic or organic based liquid additives for adjusting the growth rate and reducing the metallic impurity concentration within the SiO-based film, with or without an electron exchange pyridine based component, and an inorganic homogeneous catalyst for enhancing the growth of the SiO-based film.

Abstract: Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.

Abstract: This invention refers to a removal and recovery method of pollutant materials. A waste stream source of polluted water and/or waste gases containing waste acids, bases and salts, and/or waste air pollutant suspension particles are fed into a separation reactor. The combined physicochemical effects of removal/recovery of pollutants inside the reactor take place by solubilization, ionization, reaction, deposition and settling, which concurrently remove and separate the pollutants as solid materials, deposited on selective electrodes sets, as gases and as sludge and/or precipitates. The reactor is kept at the working temperature using a waste industrial heat, and the separation processes take place by applying a voltage source between a spaced apart system of selective electrodes, and by using a ionizing source of waste spent fuel nuclear bars or electromagnetic radiation.

Abstract: Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.