Patents Assigned to SPECMAT, Inc.
  • Patent number: 10622495
    Abstract: This disclosure relates to a Room Temperature Wet Chemical Growth (RTWCG) method and process of SiOX thin film coatings which can be grown on various substrates. The invention further relates to RTWCG method and process suited to grow thin films on the Si substrates used in the manufacture of silicon-based electronic and photonic (optoelectronic) device applications. The invention further relates to processes used to produce SiOX thin film layers for use as passivation layers, low reflectance layers, or high reflectance single layer coatings (SLARC) and selective emitters (SE).
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: April 14, 2020
    Assignee: SPECMAT, Inc.
    Inventors: Horia M. Faur, Maria Faur
  • Patent number: 10619097
    Abstract: This present invention relates to a Room Temperature Wet Chemical Growth (RTWCG) formulations, methods and processes. In one embodiment, the present invention further relates to RTWCG formulations, methods and processes that utilize a low-[HF]. In another embodiment, the present invention relates to RTWCG formulations with improved bath life.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: April 14, 2020
    Assignee: SPECMAT, Inc.
    Inventors: Horia M. Faur, Maria Faur
  • Patent number: 10526538
    Abstract: Disclosed is a method, process, solar cell design, and fabrication technology fir high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: January 7, 2020
    Assignee: SPECMAT, Inc.
    Inventors: Maria Faur, Horia M. Faur
  • Patent number: 10529872
    Abstract: A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous silicon region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index. The porous silicon region is manufactured by a stain etching process, which retrofits existing tools for junction isolation and Phosphorus Silicon Glass (PSG) etch in solar cell manufacturing. The retrofitted tools for junction isolation and PSG etch achieves multiple purposes in a single step, including etch-back, PSG etch, antireflection coating, and passivation of the front surface of the solar cell.
    Type: Grant
    Filed: March 21, 2016
    Date of Patent: January 7, 2020
    Assignee: SPECMAT, Inc.
    Inventors: Horia M. Faur, Maria Faur
  • Patent number: 9068112
    Abstract: Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: June 30, 2015
    Assignee: SPECMAT, Inc.
    Inventors: Maria Faur, Horia M. Faur, Mircea Faur