Patents Assigned to Spectrum CVD, Inc.
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Patent number: 4966869Abstract: Tungsten disilicide (WSi.sub.x) films are deposited onto doped or undoped polysilicon by reducing WF.sub.6 with a mixture of dichlorosilane (SiH.sub.2 Cl.sub.2) and disilane (Si.sub.2 H.sub.6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film without adversely affecting the uniformity or deposition rate of the film. A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO.sub.2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.Type: GrantFiled: May 4, 1990Date of Patent: October 30, 1990Assignee: Spectrum CVD, Inc.Inventors: Joseph T. Hillman, J. B. Price, William M. Triggs
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Patent number: 4861563Abstract: A compact load lock and processing chamber is disclosed in which a moveable member forms a closure for both a load lock volume and an article processing volume. The moveable member is connected to fixed members by a flexible diaphragm which provides a non-sliding seal.Type: GrantFiled: May 14, 1987Date of Patent: August 29, 1989Assignee: Spectrum CVD, Inc.Inventors: Brian H. Shekerjian, J. B. Price
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Patent number: 4788416Abstract: The temperature of a wafer in a vacuum chamber is measured by way of a tube, containing a thermocouple, extending through a wall of the chamber. The tube is sealed at one end to an aperture in the wall of the system and sealed at the other end with removable sealant.Type: GrantFiled: March 2, 1987Date of Patent: November 29, 1988Assignee: Spectrum Cvd, Inc.Inventors: J. B. Price, Richard S. Rosler
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Patent number: 4777061Abstract: A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.Type: GrantFiled: December 14, 1987Date of Patent: October 11, 1988Assignees: Spectrum CVD, Inc.Inventors: Schyi-yi Wu, J. B. Price, John Mendonca, Yu Chang Chow
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Patent number: 4749597Abstract: A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.Type: GrantFiled: October 19, 1987Date of Patent: June 7, 1988Assignee: Spectrum CVD, Inc.Inventors: John Mendonca, J. B. Price, Richard S. Rosler
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Patent number: 4737474Abstract: A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.Type: GrantFiled: November 17, 1986Date of Patent: April 12, 1988Assignee: Spectrum CVD, Inc.Inventors: J. B. Price, Yu C. Chow, John Mendonca, Schyi-Yi Wu
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Patent number: 4692343Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.Type: GrantFiled: May 12, 1986Date of Patent: September 8, 1987Assignee: Spectrum CVD, Inc.Inventors: J. B. Price, Schyi-Yi Wu
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Patent number: 4640224Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.Type: GrantFiled: August 5, 1985Date of Patent: February 3, 1987Assignee: Spectrum CVD, Inc.Inventors: Matthew L. Bunch, J. B. Price, Robert W. Stitz
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Patent number: 4632057Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.Type: GrantFiled: August 5, 1985Date of Patent: December 30, 1986Assignee: Spectrum CVD, Inc.Inventors: J. B. Price, Matthew L. Bunch, Robert W. Stitz
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Patent number: 4607591Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.Type: GrantFiled: August 6, 1985Date of Patent: August 26, 1986Assignee: Spectrum CVD, Inc.Inventor: Robert W. Stitz