Abstract: A method of improving planarity of semiconductor wafer surfaces containing damascene and dual-damascene circuitry using chemical-mechanical polishing techniques. The method includes using a first polishing step to substantially remove excess surface metal up to a detected end point. After rinsing, a second step of chemical-mechanical polishing is applied, using a second slurry that has a higher selectivity for dielectric than metal, preferably from 1.8 to 4 or more times greater. The second step of polishing, in accordance with the invention, has been found to substantially eliminate dishing and improve planarity.

Abstract: Improved manufacture of thin-film magnetic heads includes a piezoelectric driven actuator for bending row tools used in the mass manufacture of magnetic heads. The actuator is independent of the row tool and includes a lever arm which structurally deflects when driven by the piezoelectric element, converting physical displacement of the piezoelectric element to a force supplied to the row tool, through a portion of the lever arm arranged to undergo deflection. Arrays of piezoelectric actuators are also disclosed for individual adjustment of each magnetic head component of a row being polished.

Abstract: The present invention relates generally to a device used to process workpieces. In particular, the invention relates to a carrier that is used to support a workpiece during workpiece honing, grinding, or polishing. The carrier includes a rigid core coated with a fiber-free, scratch-resistant material to prevent scratching of workpieces disposed in the carrier. An adhesive layer is typically used to attach the scratch-resistant layer to the rigid core. The adhesive film and the scratch-resistant films may be attached to the rigid core by hot pressing.

Abstract: A polishing machine includes a platform assembly mounted within three support columns. The platform assembly includes fluidically pressurized bladders for urging the upper polish plate toward and away from the lower polish plate. In one embodiment a movable support column is suspended from an overlying frame. The support column is engaged with the upper polish plate so as to selectively raise and lower the platform assembly. In another embodiment, the platform is raised and lowered by threaded shafts so as to engage and thereby displace the upper polish plate.

Abstract: In a polishing machine for simultaneous double-sided polishing of workpieces between upper and lower polish tables, the upper polish table has a hollow center telescopically receiving in a drive hub supported from below. The drive hub is slotted and the upper polish plate has drive latches received in the slots. Lateral dislocations of the upper polish plate with respect to the drive hub are limited by providing stops on the drive latches which engage the outer surface of the drive hub. Additionally, the upper polish plate is suspended by a lifting rod from a double-ended main lifting cylinder.

Abstract: An improved cleaning apparatus for cleaning semiconductor wafers, rigid memory disks, flat panel displays, and other workpieces employs vibrational mechanical energy in addition to contact mechanical cleaning. The cleaning apparatus includes a cleaning element configured to contact and scrub a workpiece during a cleaning process. The cleaning clement is coupled to a mechanical energy emitter that generates low frequency mechanical vibrations (or ultrasonic mechanical energy) at a predetermined frequency. The mechanical energy is conducted through the cleaning element and to the workpiece to facilitate removal of particulate and debris from the surface of the workpiece. Use of ultrasonic energy also causes the cleaning solution to cavitate, thus providing ultrasonic cleaning to the workpiece via the cleaning solution.

Abstract: A probe assembly is provided for semiconductor wafer polishing and similar wafer treatments. The polishing table forms a recess for receiving the probe, with the probe free end located to view interior portions of a semiconductor wafer temporarily passing over the recess. Probe data may conveniently be used for polishing end point determination.

Abstract: A polishing machine includes a platform assembly slidably mounted on three support columns. The platform assembly includes first and second platforms captively joined together so as to be slidably movable toward and away from each other. A lift plate is supported above the uppermost platform by a coil spring and an upper polish plate is suspended from the lift plate by a supporting element which passes through the platform assembly. Drive shafts are suspended from an overlying superstructure and engage the upper platform so as to selectively raise and lower the platform assembly and the upper polish plate. The spring allows adjustment of the pressure applied by the upper polish plate.

Abstract: The present invention provides a method for cleaning semiconductor work pieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a work piece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the work piece. Next, the work piece is transported into a HF cleaning station wherein the work piece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The work piece then is immersed in a hydrogen fluoride ("HF") solution which is circulated around the various surfaces of the work piece. The work piece is immersed in the HF solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the work piece.

Abstract: An apparatus for evenly polishing or planarizing the surfaces of workpieces includes a distributor with a reservoir and a plurality of conduits for uniformly guiding a fluid across a surface of a polishing material. The apparatus is configured to couple to a polishing machine that processes surfaces of workpieces such as semiconductor wafers and computer discs. The reservoir receives a fluid from an exterior source and the fluid is pooled in the reservoir before passing down the conduits to the polishing material. When multiple conduits are employed, the conduits are evenly spaced around the distributor to facilitate uniform application of fluid to a number of locations on the polishing material.

Abstract: A carrier assembly for use in the processing of semiconductor wafers which avoids the use of a gimbal mechanism. The wafer carrier assembly comprises a backing pad for the wafer, with the wafer and backing pad secured within a retaining ring, such that the retaining ring, wafer, and backing pad move as single, integral assembly. A resiliently flexible outer housing terminates in a pad load ring transmits the rotation of the drive shaft to the load plate while allowing limited axial movement between the outer ring and inner ring assembly. The wafer/load plate assembly is permitted to float within the outer ring while the outer ring locally depresses the polishing pad near the wafer periphery, to mitigate edge exclusion.

Abstract: The present invention relates to a wafer cleaning machine having an input station, a water track, a cleaning station, a rinsing station, a spin-dry station, and a load station. The input station includes two or more wafer supply areas for a continuous supply of wafers to the water track. After the wafers enter the water track from the input station, the wafers are transported down the track into the wafer cleaning station. The wafer cleaning station comprises a plurality of pairs of rollers which pull the wafers through the cleaning station and thereby clean the top and bottom flat surfaces of the wafers. A one-piece cleaning fluid manifold formed within the upper panel of the cleaning station facilitates effective distribution of the cleaning fluid to the rollers. From the cleaning station, the wafers are transported to a rinse station. From the rinsing station, the workpieces are transferred to a dual spin-dry station.

Abstract: The instant invention relates generally to abrasive stones for use in processing workpiece surfaces. The abrasive stones generally are produced by combining an epoxy novalac resin mixture with microballoons and a catalyst. The mixture is put into a mold, cold pressed, and then cured, creating abrasive stones having a uniform surface and bulk structure with a uniform hardness, suitable for workpiece processing.

Abstract: An apparatus for cleaning workpieces such as magnetic recording discs, optical discs, and semiconductor wafers includes a sponge-like material surrounded on two sides by substantially rigid plates that serve as an exoskeleton support for the sponge-like material. The plates include a number of apertures formed therein. The sponge-like material protrudes through the apertures of the plates, allowing the sponge-like material to contract a surface of the workpiece during the cleaning process.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable.

Abstract: Conditioning of a polishing pad so as to control the surface profile and achieve uniformity in wear of a polishing pad by causing the workpiece and polishing pad to oscillate radially relative to one another with the extent of the oscillating movement being sufficient so that the workpiece extends over the edges of the polishing pad.

Abstract: Methods and apparatus for measuring and controlling the flow rates of processing solutions to a CMP machine during the polishing and planarization process. The apparatus comprises a processing solution source, a processing solution dispensing system for applying the solution to the CMP machine, a mechanism for transferring the processing solution from the solution source to the dispensing system, and a metering or sensing system for accurately measuring the amount of processing solution actually dispensed to the CMP machine. Preferably, the metering system comprises a coriolis mass flow meter and a controller for controlling its operation. The metering system may interface with the CMP machine controller in a feed-back loop configuration so that the actual flow rates of the solutions may be controlled in real time.

Abstract: A conditioning ring having cutting elements brazed-bonded to the bottom surface of the ring and suitably adopted for conditioning a workpiece polishing pad by contact with the pad. The conditioning ring further includes a flange extending about the bottom periphery of the ring with the cutting elements being attached to the bottom surface of the flange. The flange includes cutout portions for permitting material to escape from the interior of the ring. The cutting elements are distributed substantially uniformly across the bottom surface of the flange and the elements are brazed-bonded to the flange with a braised metal alloy, creating an extremely strong bond between the cutting elements and the flange surface.

Abstract: An apparatus for detecting the presence of extraneous material on a polishing pad during a chemical mechanical planarization (CMP) process uses a contact probe assembly. The contact probe assembly interrogates the surface of the polishing pad during processing of a workpiece and generates a control signal indicating the presence of extraneous material when the displacement of a contact stylus exceeds a threshold amount. The contact probe assembly produces a control signal in response to the detection of extraneous material and the control signal causes the CMP system to react in an appropriate manner to reduce damage to the workpieces being processed.

Abstract: An apparatus for use with a chemical mechanical planarization (CMP) system includes an infrared LED emitter that generates an interrogation signal and directs the interrogation signal toward a polishing pad configured to process a workpiece during the CMP procedure. A reflected signal produced in response to the interrogation signal is received by a detector, and the reflected signal is processed by a converter to produce a control signal having an analog voltage. The control signal is processed and an output is produced indicative of the presence of extraneous material proximate an area of the polishing pad when the analog voltage is measured within a predetermined range. The predetermined voltage range is established such that a variety of polishing pads having different physical characteristics may be employed without altering the position of the emitter or the operating parameters of the apparatus.