Patents Assigned to Spinix Corporation
-
Patent number: 6809515Abstract: Passive solid-state magnetic sensors are based on the combination of magnetorestrictive materials and piezoelectric materials. Sensors have applications in rotor speed detection, magnetic field detection, read heads, and MRAM, for example.Type: GrantFiled: July 20, 1999Date of Patent: October 26, 2004Assignee: Spinix CorporationInventors: Yi-Qun Li, Robert C. O'Handley, Gerald F. Dionne, Chun Zhang
-
Patent number: 6809516Abstract: Passive solid-state magnetic sensors comprise a magnetostrictive material in contact with a piezoelectric material. The magnetostrictive material strains under the influence of an external magnetic field and imparts stress to the piezoelectric material to produce a detectable voltage signal indicative of the external field. Sensors have applications in rotor speed detection, electrical current measurements, magnetic imaging, magnetic field detection, read heads, and MRAM, for example.Type: GrantFiled: April 5, 2000Date of Patent: October 26, 2004Assignee: Spinix CorporationInventors: Yi-Qun Li, Robert C. O'Handley, Gerald F. Dionne, Chun Zhang
-
Patent number: 6580271Abstract: Methods and systems for estimating a value of a static or time varying magnetic field that is present. In a first embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoresistive (PZR) material are combined and exposed to the unknown magnetic field, and a current source and charge-carrying line are connected between two spaced apart locations in the PZR layer. A meter measures a voltage difference or current between the two locations and estimates the value of the magnetic field. In a second embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoelectric (PZT) material are combined and exposed to a combination of the unknown magnetic field and a selected time varying magnetic field. A meter measures a voltage change, current change or other electrical variable between two spaced apart locations at two or more selected times and estimates the value of the unknown magnetic field.Type: GrantFiled: December 11, 2000Date of Patent: June 17, 2003Assignee: Spinix CorporationInventors: Yi-Qun Li, Xiao-Dong Xiang
-
Patent number: 6437558Abstract: Passive solid-state magnetic sensors are based on the combination of magnetorestrictive materials and piezoelectric materials. Sensors have applications in motor speed detection, magnetic field detection, read heads, and MRAM, for example.Type: GrantFiled: March 16, 2001Date of Patent: August 20, 2002Assignee: Spinix CorporationInventors: Yi-Qun Li, Robert C. O'Handley, Gerald F. Dionne, Chun Zhang
-
Patent number: 6403999Abstract: Method and system for estimating a concentration of free electrons with a selected spin polarization in a semiconductor material. A static magnetic field and an electromagnetic field are impressed on the semiconductor, and free electrons are injected (through diffusion or tunneling) into the semiconductor material from a ferromagnetic material. Motion of the injected, spin-polarized electrons, within the semiconductor gives rise to a Hall voltage across the semiconductor. This voltage is measured at one or more spaced apart locations and analyzed to detect presence of, and estimate a concentration of, free electrons with a selected spin at at least one location within the semiconductor. Effects of an imposed stress, temperature, illumination or electromagnetic field on the semiconductor can be determined.Type: GrantFiled: May 23, 2001Date of Patent: June 11, 2002Assignee: Spinix CorporationInventors: Robert O'Handley, Yi-Wun Li
-
Publication number: 20010040450Abstract: Passive solid-state magnetic sensors are based on the combination of magnetorestrictive materials and piezoelectric materials. Sensors have applications in rotor speed detection, magnetic field detection, read heads, and MRAM, for example.Type: ApplicationFiled: March 16, 2001Publication date: November 15, 2001Applicant: Spinix CorporationInventors: Yi-Qun Li, Robert C. O'Handley, Gerald F. Dionne, Chun Zhang
-
Publication number: 20010028245Abstract: Methods and systems for estimating a value of a static or time varying magnetic field that is present. In a first embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoresistive (PZR) material are combined and exposed to the unknown magnetic field, and a current source and charge-carrying line are connected between two spaced apart locations in the PZR layer. A meter measures a voltage difference or current between the two locations and estimates the value of the magnetic field. In a second embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoelectric (PZT) material are combined and exposed to a combination of the unknown magnetic field and a selected time varying magnetic field. A meter measures a voltage change, current change or other electrical variable between two spaced apart locations at two or more selected times and estimates the value of the unknown magnetic field.Type: ApplicationFiled: December 11, 2000Publication date: October 11, 2001Applicant: SPINIX CORPORATIONInventors: Yi-Qun Li, Xiao-Dong Xiang