Patents Assigned to Spire Corporation
  • Patent number: 5726440
    Abstract: A wavelength selective photodetector including: a substrate having a buried insulator layer for electrically isolating a lower section of the substrate located below the insulator layer from an upper section of the substrate located above the insulator layer; and a photon detector formed on the upper section of the substrate for detecting photons in a selected wavelength range, wherein the upper section has a selected thickness and the thickness determines at least in part the selected wavelength range of the detected photons.
    Type: Grant
    Filed: November 6, 1995
    Date of Patent: March 10, 1998
    Assignee: Spire Corporation
    Inventors: Nader M. Kalkhoran, Fereydoon Namavar
  • Patent number: 5671914
    Abstract: A multi-band spectroscopic photodetector array including a substrate having a buried insulator layer in the substrate for electrically isolating a lower section of the substrate located below the insulator layer form an upper section of the substrate located above the insulator layer; and a plurality of photodetection elements each formed on a different portion of the upper layer and each including elements for detecting photons in a selected wavelength range; wherein each of the different portions of the upper section has a different thickness and wherein the thickness at least in part determines the selected wavelength of the photons detected by each of the detection elements.
    Type: Grant
    Filed: November 6, 1995
    Date of Patent: September 30, 1997
    Assignee: Spire Corporation
    Inventors: Nader M. Kalkhoran, Fereydoon Namavar
  • Patent number: 5620439
    Abstract: A laser treatment device provides an output operating laser beam having a single wavelength which is highly absorbed by tissue of a patient and which beam is non-diverging. The laser treatment device may be a catheter which is inserted into a patient for performing endovascular myocardial revascularization (i.e., creating new channels for blood flow from within the interior of the patient's heart). The use of the highly absorbed wavelength and the non-diverging character of the beam are possible by having a distal laser at a distal end of the catheter. The distal laser is pumped by a source of laser energy supplied by an array of diode lasers and passed along an optical fiber from a proximal end of the catheter.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: April 15, 1997
    Assignees: George S. Abela, Spire Corporation
    Inventors: George S. Abela, H. Paul Maruska
  • Patent number: 5520664
    Abstract: Catheters including at least one component having a tissue interfacing surface characterized by a substantially nonleaching surface treatment of antimicrobial metal. The component can be a subcutaneous cuff, and the antimicrobial metal can be silver. The process for implanting the silver atoms can include dry coating the tissue interfacing surface of the catheter by way of ion beam assisted deposition. Alternatively, the silver can be introduced into the tissue interfacing surface by ion implantation.
    Type: Grant
    Filed: January 11, 1994
    Date of Patent: May 28, 1996
    Assignee: Spire Corporation
    Inventors: Raymond J. Bricault, Jr., John E. Barry, Piran Sioshansi
  • Patent number: 5492763
    Abstract: A medical device provided with a subsurface bacteriostatic/bactericidal stratum to a predetermined depth is disclosed. The bacteriostatic/bactericidal stratum is introduced into the medical device by ion implantation of sufficient concentration to impart thereto the desired bacteriostatic/bactericidal property. The acquired bacteriostatic/bactericidal property has a useful life coterminal with the device. The treated medical device remains biocompatible, is non-leaching and, depending on the specific device, also is thromboresistant.
    Type: Grant
    Filed: February 10, 1994
    Date of Patent: February 20, 1996
    Assignee: Spire Corporation
    Inventors: John E. Barry, Piran Sioshansi
  • Patent number: 5474797
    Abstract: Polymeric implants provided with coatings of bactericidal compounds in the form of ionized atoms by a vapor process. The polymeric implants include products designed to penetrate or enter the body, such as catheters, shunts connectors and the like. Coatings of bactericidal compounds on the polymeric implants are intended to make their use safe. The coatings are formed thereon in the form of ionized atoms of the compounds by ion-beam-assisted deposition in a vacuum chamber. The vacuum chamber is provided, inter alia, with an evaporator and an ion source mounted in operative association therein, including means for rotatably mounting a plurality of polymeric implants for exposure to the evaporator and the ion source.
    Type: Grant
    Filed: February 10, 1994
    Date of Patent: December 12, 1995
    Assignee: Spire Corporation
    Inventors: Piran Sioshansi, Eric J. Tobin, John E. Barry, Robert S. Farivar
  • Patent number: 5468562
    Abstract: Surface metallized polymeric implants, such as cannula, needles, catheters, connectors and the like, a dry coating method therefor and apparatus to accomplish the same are disclosed. The metallization of the implants is intended to improve their biocompatibility and to reduce infusion-associated phlebitis and infection. The method essentially includes the dry coating of the outside surfaces of the polymeric implants with a metallic thin film. The apparatus to effect the dry coating method essentially includes a vacuum chamber, an evaporator and an ion source mounted in operative association within the chamber, and means for rotatably mounting a plurality of polymeric implants for exposure to the evaporator and the ion source.
    Type: Grant
    Filed: February 10, 1994
    Date of Patent: November 21, 1995
    Assignee: Spire Corporation
    Inventors: Mohammad Farivar, Piran Sioshansi
  • Patent number: 5457356
    Abstract: A flat panel display, such as a head mounted display, and a process for its manufacture are disclosed. Essentially, the flat panel display comprises separately manufactured flat panels including a display material and driver chips that are bump-bonded to the flat panels preferably by using flip chip technology. The flat panel display is particularly applicable to miniature display applications and is characterized by being rugged yet reliable, in color but with good luminescence across the spectrum of the primary colors of red, blue and green. Pixels preferably are addressed by passive matrix activation. Preferably, the display material of the flat panels is a thin film electroluminescent material, a passive matrix liquid crystal material, a plasma display material or a field emission display material.
    Type: Grant
    Filed: August 11, 1993
    Date of Patent: October 10, 1995
    Assignee: Spire Corporation
    Inventor: Themis Parodos
  • Patent number: 5452118
    Abstract: A monolithic integrated optical heterodyne receiver circuit formed on a single chip and a process of its manufacture are disclosed. The heterodyne receiver circuit essentially includes a tunable local oscillator formed on a substrate for generating a first light beam, a first waveguide coplanarly formed on the substrate adjacent to the local oscillator for transmitting the first light beam, a second waveguide formed on top of the first waveguide for receiving and transmitting an information-encoded second light beam, a coupler region sandwiched between the first and second waveguides for mixing the two light beams, and a pair of detectors mounted in electrical series with one another for converting the mixed light beams to a radio frequency signal operating at an intermediate frequency.
    Type: Grant
    Filed: April 20, 1993
    Date of Patent: September 19, 1995
    Assignee: Spire Corporation
    Inventor: H. Paul Maruska
  • Patent number: 5436499
    Abstract: High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical and lateral, between closely packed active devices. Essentially, the GaAs devices include a substrate on which is formed, preferably by epitaxial growth or by ion implantation, an active GaAs, or AlGaAs region incorporating, by appropriate doping, the simultaneously therein formed active segments. The active segments are electrically shielded by providing insulating stratums in the active GaAs, AlGaAs region surrounding the active segments. Preferably, the insulating stratums are formed therein by implanting arsenic ions therein so as to form arsenic precipitates. Preferably, a passivated surface layer also is formed in part of the surface of the GaAs, AlGaAs active layer, also preferably by implanting arsenic ions therein.
    Type: Grant
    Filed: March 11, 1994
    Date of Patent: July 25, 1995
    Assignee: Spire Corporation
    Inventors: Fereydoon Namavar, Nader M. Kalkhoran
  • Patent number: 5272355
    Abstract: A solid state optoelectronic switching and display device and a method for its manufacture are disclosed. The device, formed in silicon, essentially is a surface-emitting visible light-emitting diode that allows rapid and efficient switching and information transfer, via optical means, between IC's, PC boards and displays in a computer. The method essentially includes electrochemically etching a silicon wafer to form a porous silicon region therein, depositing a transparent semiconductor layer on the porous silicon region, and forming a back contact on the wafer.
    Type: Grant
    Filed: May 20, 1992
    Date of Patent: December 21, 1993
    Assignee: Spire Corporation
    Inventors: Fereydoon Namavar, Nader M. Kalkhoran, H. Paul Maruska
  • Patent number: 5260621
    Abstract: An electric battery comprises a semiconductor junction incorporating an inorganic crystalline compound of Group III and Group V elements of the Periodic Table characterized by a predetermined annealing temperature for defects therein; a nuclear source of relatively high energy radiation and concomitant heat, which radiation causes generation of such defects in the semiconductor junction; and a thermal impedance enclosure for the nuclear source and the semiconductor-junction for retaining therewithin a sufficient quantity of heat to maintain a functional relationship between the generation of defects and the predetermined annealing temperature during operation.
    Type: Grant
    Filed: March 18, 1991
    Date of Patent: November 9, 1993
    Assignee: Spire Corporation
    Inventors: Roger G. Little, Edward A. Burke
  • Patent number: 5236509
    Abstract: A modular ion beam assisted continuous coating apparatus and method for a wide range of materials and the products so made are disclosed. The materials include metals, such as all kinds of steels and the like in sheet, wire, tubing and rod forms, and plastics, such as all kinds of polymers again in sheet, wire, tubing and rod forms. The coatings on the materials are intended to improve their wear, corrosion and/or oxidation resistance as well as to enhance their aesthetic appearance. The coatings essentially include metals such as aluminum, chromium, cadmium, tin, zinc, iron, platinum, nickel, silver, gold, etc., and ceramics such as ZrO.sub.2, SiO.sub.2, Y.sub.2 O.sub.3, TiN and Si.sub.3 N.sub.4. The modular continuous coating apparatus essentially is divided into four stages a vacuum entry stage, a material pre-cleaning stage, an ion beam assisted coating stage, and a vacuum exit stage.
    Type: Grant
    Filed: February 6, 1992
    Date of Patent: August 17, 1993
    Assignee: Spire Corporation
    Inventors: Piran Sioshansi, Raymond J. Bricault, Jr.
  • Patent number: 5231298
    Abstract: A device made by a process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.
    Type: Grant
    Filed: February 11, 1992
    Date of Patent: July 27, 1993
    Assignee: Spire Corporation
    Inventor: James T. Daly
  • Patent number: 5223309
    Abstract: A process to improve the surface properties of products made, at least in part, from silicone rubber is disclosed. The products find uses in industrial and medical device applications, such as drug-pump seals and valves, membranes, mammary prostheses, artificial heart diaphragms, pacemaker lead insulation and the like. The process is designed to change the silicone rubber's surface to one that is characterized by low friction, being antithrombotic, inkable, more wear resistant and deformable, and also being hydro-compatible. The process includes subjecting the product's silicone rubber surface to ion bombardment with gaseous ions that diffuse out with doses and at energy levels at least about 3E14 ions/cm.sup.2 at 80 keV.
    Type: Grant
    Filed: July 8, 1992
    Date of Patent: June 29, 1993
    Assignee: Spire Corporation
    Inventors: Robert S. Farivar, Piran Sioshansi
  • Patent number: 5154023
    Abstract: A cost-effective process for polishing refractory materials, including natural and synthetic diamond, sapphire, ruby and Si.sub.3 N.sub.4 balls, is disclosed, wherein the surfaces thereof are successively softened to a predetermined depth by ion implantation, followed by mechanical polishing. This cycle of ion-implantation softening, followed by mechanical polishing, is repeated until such time that surface profilometry indicates that a desired surface smoothness has been achieved.
    Type: Grant
    Filed: June 11, 1991
    Date of Patent: October 13, 1992
    Assignee: Spire Corporation
    Inventor: Piran Sioshansi
  • Patent number: 5152795
    Abstract: An improved surgical implant, including dental implants, formed of Ti and its alloys and a process of its manufacture are disclosed. The improved surgical implant is designed to withstand fretting wear and abrasion occasioned by vibrating micromotion of the implant against the surrounding bone structure. Such micromotion has caused undesirable blackening in the surrounding tissue and has required premature replacement of the implant.
    Type: Grant
    Filed: January 9, 1992
    Date of Patent: October 6, 1992
    Assignee: Spire Corporation
    Inventors: Piran Sioshansi, Richard W. Oliver
  • Patent number: 5133757
    Abstract: A load-bearing plastic orthopaedic joint implant, formed aat least partially of UHMWPE or HDPE material, and a process of subjecting at least the load-bearing surface thereof to ion implantation so as to improve its surface characteristics are disclosed. Such improved surface characteristics result, inter alia, from the formation in the treated surfaces, of increased carbon to carbon bonds, diamond-like carbon chain scissions and wherein the implanted ions do not form precipitate chemical compounds with the plastic material.
    Type: Grant
    Filed: July 31, 1990
    Date of Patent: July 28, 1992
    Assignee: Spire Corporation
    Inventors: Piran Sioshansi, Richard W. Oliver
  • Patent number: 5123924
    Abstract: An improved surgical implant, formed of cobalt-chromium and its alloys in contact with a bearing surface formed by UHMWPE, and a process of its manufacture are disclosed. The improved surgical implant is designed to reduce the wear of the UHMPE component of the surgical implant, enhancing its useful life. The process essentially includes the ion implantation of the cobalt-chromium component, with a resultant increase in its microhardness and a decrease in its coefficient of friction, particularly when articulating against the UHMWPE component.
    Type: Grant
    Filed: November 28, 1990
    Date of Patent: June 23, 1992
    Assignee: Spire Corporation
    Inventors: Piran Sioshansi, Eric J. Tobin
  • Patent number: 5118400
    Abstract: A process of improving the sensing function of biocompatible electrodes and the product so made are disclosed. The process is designed to alter the surfaces of the electrodes at their tips to provide increased surface area and therefore decreased contact resistance at the electrode-tissue interface for increased sensitivity and essentially includes rendering the tips atomically clean by exposing them to bombardment by ions of an inert gas, depositing an adhesion layer on the cleaned tips, forming a hillocked layer on the adhesion layer by increasing the temperature of the tips, and applying a biocompatible coating on the hillocked layer. The resultant biocompatible electrode is characterized by improved sensitivity, minimum voltage requirement for organ stimulation and a longer battery life for the device in which it is employed.
    Type: Grant
    Filed: January 29, 1990
    Date of Patent: June 2, 1992
    Assignee: Spire Corporation
    Inventor: John S. Wollam