Abstract: A method is described for the liquid phase synthesis of particles. The particles are composed of silicon or germanium and are optionally produced at sizes such that the particles exhibit quantum size effects. The particles are produced from an organometallic (tetra-organosilicon or tetra-organogermanium) precursors which is dissolved in a solvent that transmits a wavelength of light that photolyzes the precursor. The reaction is carried out under an inert atmosphere. A passivating agent is added to arrest particle growth and impart solubility to the particle. Optionally, a dopant is incorporated into the particle in the course of production so as to modify the electronic properties of the semiconductor particle.

Abstract: A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low electron density substrate, so as to form features as fine as about 10 nanometers. The reduced melting and sintering temperatures associated with nanocrystals, compared with the bulk material allows for the use of more moderate processing conditions. Lessened interfacial stress between dissimilar layers results.

Abstract: Thin films of the Group IV materials silicon and germanium are produced in the range of 2.5 to 25 nm thick from nanocrystal precursors. According to the invention a solid, continuous film of silicon or germanium is formed by depositing a contiguous layer of nanocrystals of the semi-conductor materials onto a substrate, then heating the layer to a temperature below the bulk melting temperature which is nonetheless adequate to melt the nanocrystals and form a continuous liquid thin film upon cooling. The resulting thin film may be doped or intrinsic. The lower processing temperatures make it possible to form these thin semi-conductor films with less stringent thermal requirements on the underlayers, substrates and other related structures, thus supporting applications in microelectronics, solar conversion and so forth.

Abstract: A continuous semiconductor thin film is formed by providing a sheet of a substrate material and applying a continuous layer of nanocrystals of the semiconductor material onto the substrate. The layer of nanocrystals is melted at a temperature below that of the bulk, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film which forms a solid upon cooling. The nanocrystals may be sprayed onto the substrate, either from the liquid or gas phase. The substrate sheet is preferably tensioned during the application of the nanocrystalline layer, for example, with a set of rollers is used to provide the tensioning at a predetermined feed rate.