Abstract: A high-voltage bushing, comprising a conductive rod and an air cooling device. The conductive rod is internally provided with an air duct, and the air duct comprises an air inlet and an air outlet. The air cooling device comprises at least one fan, and the fan is configured to output airflow so as to blow the airflow into the air duct through the air inlet.

Abstract: Provided in the present disclosure are an IGBT device backside structure and a preparation method therefor, and an IGBT device, the IGBT device backside structure comprising a buffer layer, the buffer layer comprising a first activation efficiency buffer area corresponding to an active area of the IGBT device and a second activation efficiency buffer area corresponding to a terminal area of the IGBT device, the activation efficiency of the first activation efficiency buffer area being less than the activation efficiency of the second activation efficiency buffer area.