Abstract: A field-effect transistor (FET) based synchronous rectifier for emulating a diode, comprising: a first terminal (20) and a second terminal (30); a first FET (M1) and a second FET (M2), wherein the second FET (M2) is adapted to control operation of the first FET (M1) to thereby allow unidirectional current flow when the two terminals (20, 30) are connected with an external circuit; and wherein the FET based synchronous rectifier comprises a fully integrated single-chip device (10) adapted to emulate a diode.
Type:
Grant
Filed:
September 29, 2020
Date of Patent:
March 26, 2024
Assignee:
Steifpower Technology Company Limited
Inventors:
Domenico Lo Verde, Cesare Ronsisvalle, Chi Ping Tang