Patents Assigned to STMicroelectronics (Rousset) SAS
  • Publication number: 20240089860
    Abstract: A wireless communication device includes a battery, and a platform powered by the battery, with the platform including a processor. The device also includes a voltage regulator powered by the battery, an ultra-wideband communication unit powered by the voltage regulator via the platform when the platform is powered up, and a near-field communication unit powered directly by the battery, and being configured to order the voltage regulator to power the ultra-wideband communication unit when the platform is powered down.
    Type: Application
    Filed: September 7, 2023
    Publication date: March 14, 2024
    Applicant: STMicroelectronics (Rousset) SAS
    Inventor: Alexandre TRAMONI
  • Patent number: 11928541
    Abstract: A closed container includes a detection device for detecting opening of or an attempt to open the container. The detection device includes a contactless passive transponder that is configured to communicate with a reader via an antenna using a carrier signal. An integrated circuit of the transponder includes two input terminals connected to the antenna and two output terminals linked by a first electrically conductive wire having a severable part which is severed in the event of an opening of or an attempted opening of the container. A shorting circuit is configured to short-circuit a first output terminal with a first input terminal in the event of a conductive repair of the severed part which forms an electrical connection between the two output terminals.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: March 12, 2024
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Jose Mangione, Andrei Tudose, Pierre Yves Baudrion, Joran Pantel
  • Patent number: 11921834
    Abstract: A method of authenticating a first electronic circuit includes generating a first signature using the first electronic circuit, the generating of the first signature being based on states of a plurality of electric nodes distributed within the first electronic circuit. A second signature is generated using a second electronic circuit, the generating of the second signature being based on states of a plurality of electric nodes distributed within the second electronic circuit. The first signature is compared to the second signature. The first electronic circuit is authenticated based on the comparison of the first signature to the second signature.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: March 5, 2024
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventor: Fabrice Marinet
  • Patent number: 11918889
    Abstract: A device comprising at least one controller handset possessing a housing and at least one control element that is arranged so as to protrude from the housing and to be movable with respect to the housing so as to allow a user to control at least one movement of at least one object that is external to the device, and a contactless transponder having at least one antenna that is housed in the at least one control element.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: March 5, 2024
    Assignees: STMICROELECTRONICS KK, STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Hirokazu Sakamoto, Anthony Tornambe
  • Patent number: 11922133
    Abstract: A method includes processing, by an arithmetic and logic unit of a processor, masked data, and keeping, by the arithmetic and logic unit of the processor, the masked data masked throughout their processing by the arithmetic and logic unit. A processor includes an arithmetic and logic unit configured to keep masked data masked throughout processing of the masked data in the arithmetic and logic unit.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: March 5, 2024
    Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Grenoble 2) SAS
    Inventors: Rene Peyrard, Fabrice Romain, Jean-Michel Derien, Christophe Eichwald
  • Publication number: 20240069901
    Abstract: A server builds an update file to update software. The server compiles source code of an updated version of the software, generating a binary file of the updated version of the software. Memory locations are mapped to sections of the binary file based on mappings of sections of a binary file of a prior version of the software. Bits of sections of a plurality of sections of the binary file of the prior version are logically combined, bit-by-bit, with bits of corresponding sections of the binary file of the updated version. The logically combining includes: applying an exclusive or operation; or applying an exclusive nor operation. The update file is built based on the mapping of the memory locations and on results of the logical combining.
    Type: Application
    Filed: August 3, 2023
    Publication date: February 29, 2024
    Applicant: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Yoann BOUVET, Jean-Paul COUPIGNY
  • Publication number: 20240074134
    Abstract: An integrated circuit includes transistor. That transistor is manufactured using a process including the following steps: forming a first gate region; depositing dielectric layers accumulating on sides of the first gate region to form regions of spacers having a width; etching to remove a part of the deposited dielectric layers accumulated on the sides of the first gate region to reduce the width of the regions of spacers; performing a first implantation of dopants aligned on the regions of spacers to form first lightly doped conduction regions of the transistor; and performing a second implanting of dopants to form first more strongly doped conduction regions of the transistor.
    Type: Application
    Filed: August 7, 2023
    Publication date: February 29, 2024
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Paul DEVOGE, Abderrezak MARZAKI, Franck JULIEN, Alexandre MALHERBE
  • Patent number: 11914450
    Abstract: In an embodiment, an electronic device includes a first near field communication module, at least one second communication module, at least one portion of a volatile memory, at least one register, and at least one first circuit configured to activate the near field communication module, wherein the at least one second communication module is configured to power the at least one portion of the volatile memory, the at least one register and the at least one first circuit with a first supply voltage when the electronic device is in an on state and when the first near field communication module is in a standby mode.
    Type: Grant
    Filed: June 10, 2022
    Date of Patent: February 27, 2024
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Alexandre Tramoni
  • Publication number: 20240063280
    Abstract: A MOSFET transistor includes, on a semiconductor layer, a stack of a gate insulator and of a gate region on the gate insulator. The gate region has a first gate portion and a second gate portion between the first gate portion and the gate insulator. The first gate portion has a first length in a first lateral direction of the transistor. The second gate portion has a second length in the first lateral direction that is shorter than the first length.
    Type: Application
    Filed: August 4, 2023
    Publication date: February 22, 2024
    Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SAS
    Inventors: Franck JULIEN, Julien DELALLEAU, Julien DURA, Julien AMOUROUX, Stephane MONFRAY
  • Patent number: 11906332
    Abstract: An integrated circuit includes a first substrate. A MOS transistor has a first polysilicon region electrically isolated from the first substrate and including a gate region. A second polysilicon region is electrically isolated from the first polysilicon region and from the first substrate. The second polysilicon region includes a source region, a substrate region and a drain region of the MOS transistor. The first polysilicon region is located between an area of the first substrate and the second polysilicon region.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: February 20, 2024
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Pascal Fornara
  • Patent number: 11906994
    Abstract: A voltage regulator is embedded in a circuit intermediate a first node (coupled to a battery) and a second node (supplying power to an external memory). The voltage regulator is activatable in a first mode of operation for startup during which an voltage is applied to the second node that increases towards a supply threshold. In response to the voltage at the second node reaching the supply threshold, the voltage regulator transitions to a second mode of operation where a programmable regulated voltage (higher than the supply threshold) is applied to the second node. In response to receipt of a low-power operation request, a first high-drive regulator circuitry is deactivated and a second low-power regulator circuitry is activated to provide a third mode of operation at low power.
    Type: Grant
    Filed: June 9, 2022
    Date of Patent: February 20, 2024
    Assignees: STMicroelectronics S.r.l., STMicroelectronics (Rousset) SAS
    Inventors: Daniele Mangano, Andrei Tudose, Francesco Clerici, Pasquale Butta'
  • Patent number: 11901819
    Abstract: An embodiment voltage converter includes a first transistor connected between a first node of the converter and a second node configured to receive a power supply voltage, a second transistor connected between the first node and a third node configured to receive a reference potential, a first circuit configured to control the first and second transistors, and a comparator including first and second inputs. The first input is configured to receive, during a first phase, a first voltage ramp and, during a second phase, a set point voltage. The second input is configured to receive, during the first phase, the set point voltage and, during the second phase, a second voltage ramp.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: February 13, 2024
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Sebastien Ortet, Olivier Lauzier
  • Patent number: 11894657
    Abstract: An embodiment pulse generator circuit comprises a first electronic switch coupled between first and second nodes, and a second electronic switch coupled between the second node and a reference node. An LC resonant circuit comprising an inductance and a capacitance is coupled between the first and reference nodes along with charge circuitry comprises a further inductance in a current flow line between a supply node and an intermediate node in the LC resonant circuit. Drive circuitry of the electronic switches repeats, during a sequence of switching cycles, charge time intervals, wherein the capacitance in the LC resonant circuit is charged via the charge circuit, and pulse generation time intervals, wherein a pulsed current is provided to the load via the first and second nodes. The charge and pulse generation time intervals are interleaved with oscillation time intervals where the LC resonant circuit oscillates at a resonance frequency.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: February 6, 2024
    Assignees: STMicroelectronics S.r.l., STMicroelectronics (Rousset) SAS
    Inventors: Romeo Letor, Vanni Poletto, Antoine Pavlin, Nadia Lecci, Alfio Russo
  • Patent number: 11892958
    Abstract: The present description concerns attribution, on a communication over an I2C bus, of a first address to a first device by a second device, wherein the second device sends the first address over the I2C bus and, if the second device receives no acknowledgment data, then the first device records the first address.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: February 6, 2024
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: François Tailliet
  • Patent number: 11895423
    Abstract: A system includes an electronic module and an integrated circuit outside the electronic module. The integrated circuit is configured to generate a digital timing signal that emulates a first synchronization signal internal to the module and not available outside the module and to generate trigger signals based on the digital timing signal. A controller is configured to independently and autonomously perform control operations of the electronic module at times triggered by the trigger signals.
    Type: Grant
    Filed: March 21, 2023
    Date of Patent: February 6, 2024
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventor: Olivier Ferrand
  • Patent number: 11888550
    Abstract: An antenna configured for near field communication includes a first coil for transmitting and receiving signals having a first frequency and a second coil for transmitting and receiving signals having a second frequency greater than at least twice the first frequency. The first and second coils are magnetically coupled with a coupling coefficient greater than 0.5.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: January 30, 2024
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Hugues Creusy
  • Patent number: 11889397
    Abstract: A device, including a main element and a set of at least two auxiliary elements, said main element including a master SWP interface, each auxiliary element including a slave SWP interface connected to said master SWP interface of said NFC element through a controllably switchable SWP link and management means configured to control said SWP link switching for selectively activating at once only one slave SWP interface on said SWP link.
    Type: Grant
    Filed: January 27, 2022
    Date of Patent: January 30, 2024
    Assignees: STMicroelectronics (Rousset) SAS, STMICROELECTRONICS GMBH
    Inventors: Thierry Meziache, Pierre Rizzo, Alexandre Charles, Juergen Boehler
  • Publication number: 20240030357
    Abstract: A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type doped first cathode region adjacent to an undoped second anode region. A first metal contact is disposed on a surface of the N-type doped first cathode region and a second metal contact is disposed on a surface of the undoped second anode region. The first metal contact and second metal contact are electrically insulated from each other by an insulating layer on the layer of polysilicon.
    Type: Application
    Filed: July 20, 2023
    Publication date: January 25, 2024
    Applicant: STMicroelectronics (Rousset) SAS
    Inventor: Abderrezak MARZAKI
  • Patent number: 11876732
    Abstract: System on a chip, comprising several master pieces of equipment, several slave resources, an interconnection circuit coupled between the master pieces of equipment and the slave resources and capable of routing transactions between master pieces of equipment and slave resources. A first particular slave resource cooperates with an element of the system on a chip, for example a clock signal generator, and the element has the same access rights as those of the corresponding first particular slave resource.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: January 16, 2024
    Assignees: STMicroelectronics (Rousset) SAS, STMicroelectronics (Alps) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics (Grand Ouest) SAS
    Inventors: Daniel Olson, Loic Pallardy, Nicolas Anquet
  • Patent number: 11875847
    Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.
    Type: Grant
    Filed: February 16, 2022
    Date of Patent: January 16, 2024
    Assignees: Universite D'Aix Marseille, Centre National De La Recherche Scientifique, STMicroelectro (Crolles 2) SAS, STMicroelectronics (Rousset) SAS
    Inventors: Jean-Michel Portal, Vincenzo Della Marca, Jean-Pierre Walder, Julien Gasquez, Philippe Boivin