Abstract: In a non-volatile memory device, a memory sector is provided. The memory sector includes a plurality of tiles arranged horizontally. Each tile includes a plurality of memory cells arranged in horizontal word lines and vertical bit lines. A pre-decoder is configured to receive a set of encoded address signals to produce pre-decoding signals. A central row decoder is arranged in line with the plurality of tiles, receives the pre-decoding signals and produces level-shifted pull-up and pull-down driving signals for driving the word lines. First buffer circuits are arranged on a first side of each tile. Each of the first buffer circuits is coupled to a respective word line, receives a level-shifted pull-up driving signal and a level-shifted pull-down driving signal, and selectively pulls up or pulls down the respective word line as a function of the values of the received signals.

Abstract: An integrated circuit includes a memory and processing circuitry. The memory stores an Elementary File Test (EFT) file including a record storing information to update a target elementary file (TGF) in a file system of the EFT. The stored information includes a file path identifier identifying a position of the TGF in the file system of the EFT file, which is a concatenation of a parent file identifier followed by an identifier of the TGF, a first length indicator of a first type of data, the data of the first type, a second length indicator to indicate a length of a second type of data, and the data of the second type. The processing circuitry, in operation, identifies the TGF based on the file path identifier and updates the content of the TGF to include the first data and one or more instances of the second data.

Abstract: The present disclosure is directed to a wearable electronic device, such as a watch, that includes one or more optical sensors. In order to determine accuracy of measurements by the optical sensors, the device detects whether or not the optical sensors are in physical contact with the user's skin. The device detects a level of contact between the user's skin and the optical sensors based on electrostatic charge variation measurements, and generates a contact reliability index (CRI) based on the level of contact. Operation of the optical sensors are adjusted based on the CRI.

Abstract: One or more embodiments are directed to quad flat no-lead (QFN) semiconductor packages, devices, and methods in which one or more electrical components are positioned between a die pad of a QFN leadframe and a semiconductor die. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and at least one electrical component that has a first contact on the die pad and a second contact on the lead. A semiconductor die is positioned on the at least one electrical component and is spaced apart from the die pad by the at least one electrical component. The device further includes at least one conductive wire, or wire bond, that electrically couples the at least one lead to the semiconductor die.

Abstract: A microelectromechanical (MEMS) structure includes a fixed frame internally defining a cavity, and a mobile mass suspended in the cavity and movable with a first resonant rotational mode about a first rotation axis and with a second resonant rotational mode about a second rotation axis orthogonal to the first. A pair of supporting elements extends in the cavity, is rigidly coupled to the fixed frame, and is elastically deformable to cause rotation of the mobile mass about the first rotation axis. A pair of elastic-coupling elements is elastically coupled between the mobile mass and the first pair of supporting elements. Each of the elastic-coupling elements includes a first and second elastic portions, the first elastic portion being compliant to torsion about the second rotation axis. The second elastic portion is compliant to bending outside of a horizontal plane of main extension of the MEMS structure.

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

Abstract: A voltage controlled oscillator includes a series resonant circuit having a resonance frequency and an active voltage driving device coupled to the series resonant circuit. The active voltage driving device provides a driving voltage and has an output negative resistance in an operative voltage range at the resonance frequency. The active voltage driving device includes a cross-coupled differential pair having voltage supply terminals providing the driving voltage. The series resonant circuit is coupled between the voltage supply terminals of the cross-coupled differential pair.

Abstract: Disclosed herein is a method of making a microelectromechanical (MEMS) device. The method includes, in a single structural layer, affixing a tiltable structure to an anchorage portion with first and second supporting arms extending between the anchorage portion and opposite sides of the tiltable structure, and forming first and second resonant piezoelectric actuation structures extending between a constraint portion of the first supporting arm and the anchorage portion, on opposite sides of the first supporting arm. The method further includes coupling a handling wafer underneath the structural layer to define a cavity therebetween, and forming a passivation layer over the structural layer, the passivation layer having contact openings defined therein for routing metal regions for electrical coupling to respective electrical contact pads, the electrical contact pads being electrically connected to the first and second resonant piezoelectric actuation structures.

Abstract: The present disclosure is directed to a detection structure for a vertical-axis resonant accelerometer. The detection structure includes an inertial mass suspended above a substrate and having a window provided therewithin and traversing it throughout a thickness thereof. The inertial mass is coupled to a main anchorage, arranged in the window and integral with the substrate, through a first and a second anchoring elastic element of a torsional type. The detection structure also includes at least a first resonant element having longitudinal extension, coupled between the first elastic element and a first constraint element arranged in the window. The first constraint element is suspended above the substrate, to which it is fixedly coupled through a first auxiliary anchoring element which extends below the first resonant element with longitudinal extension and is integrally coupled between the first constraint element and the main anchorage.

Abstract: A method of producing electronic components including at least one circuit having coupled therewith electrical connections including metallic wire bondable surfaces encased in a packaging, the method including bonding stud bumps, in particular copper stud bumps, at determined areas of said wire bondable surfaces.

Abstract: Signal processing is applied to a digital audio input signal to provide an analog audio output signal using a switching converter circuit driven by a pulse-width-modulated (PWM) signal. The analog audio output signal is sensed to provide an analog feedback signal. The signal processing that is applied includes: converting the digital audio input signal to producing an analog replica; producing an analog error signal indicative of a difference between the analog replica of the digital input signal and the analog feedback signal; converting the analog error signal to produce a digital error signal; digitally filtering the digital error signal to produce a filtered digital error signal; and generating the PWM signal from the filtered digital error signal.

Abstract: A signal decode circuit is coupled to a buffer for each signal channel. A memory includes a shared area configured to store waveform data sets, each waveform data set including a sequence of coded waveform values specifying waveform step states. The shared area further stores delay data sets, each delay data set including a digital delay value for each signal channel defining a delay profile. A signal pointer addresses the shared area to read one waveform data set from the memory with the sequence of coded waveform values being selectively loaded into one or more of the buffers. A delay pointer addresses the shared area to read one delay data set from the memory with the digital delay values used to control delayed actuation of the signal decode circuits to decode the sequence of coded waveform values from the buffers and generate waveform signals in accordance with the delay profile.

Abstract: An earphone device has a casing having a measurement portion dedicated to acquisition of at least one measurement quantity with the earphone device arranged outside an ear of a subject. The earphone device is provided with at least one sensor, operatively coupled to the measurement portion within the casing for acquiring signals indicative of the measurement quantity, and a processing module that processes the signals acquired by the sensor so as to provide a processed output signal for monitoring the measurement quantity, as a function of the acquired signals. Electrical-connection elements define electrical paths within the casing in electrical connection with the sensor.

Abstract: The present disclosure is directed to embodiments of a conductive structure on a conductive layer, which may be a conductive damascene layer of a semiconductor device or package. The conductive damascene layer may be within a substrate of the semiconductor device or package. A crevice is present between one or more sidewalls of the conductive structure and one or more sidewalls of one or more insulating layers on the substrate and extends to a surface of the conductive layer. A sealing layer is formed in the crevice that seals the conductive layer from moisture and contaminants external to the semiconductor device or package that may enter the crevice. In other words, the sealing layer stops the moisture and contaminants from reaching the conductive layer such that the conductive layer does not corrode due to exposure to the moisture and contaminants.

Abstract: A device includes a multiplier, an accumulator and a floating point adder. The multiplier generates a product of a first factor having a sign bit and exponent bits and a second factor having a sign bit and exponent bits. The multiplier includes a sign multiplier and a subtractor. The sign multiplier generates a product of the sign bit of the first factor and the sign bit of the second factor. The subtractor subtracts the exponent bits of the first factor from the exponent bits of the second factor. The accumulator stores a current accumulation value. The floating-point adder is coupled to the multiplier and to the accumulator, and, in operation, the adder generates an updated accumulation value based a sum of the product and the current accumulation value, and stores the updated accumulation value in the accumulator. The first factor may be a weight of a neural network.

Abstract: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

Abstract: In a digital communication system, a master device and a number of slave devices are coupled in communication with the master device over a shared data communication bus. A selection line for each one of the slave devices couples the master device with a respective slave device and is dedicated to selection by the master device of the respective slave device for communication over the shared data communication bus. Each of the slave devices is able to send an interrupt request to the master device over the respective selection line to be served by the master device initiating a communication over the shared data communication bus, each selection line thereby being a bidirectional communication line between the respective slave device and the master device.

Abstract: In an embodiment, a voltage multiplier comprises an input node, an output node, and first and second control nodes for receiving first and second clock signals defining two commutation states. An ordered sequence of intermediate nodes is coupled between the input and output nodes and includes two ordered sub-sequences. Capacitors are coupled: between each odd intermediate node in the first sub-sequence and the first control node; between each even intermediate node in the first sub-sequence and the second control node; between each odd intermediate node in the second sub-sequence and a corresponding odd intermediate node in the first sub-sequence; and between each even intermediate node in the second sub-sequence and a corresponding even intermediate node in the first sub-sequence. The circuit comprises selectively conductive electronic components coupled to the intermediate nodes.

Abstract: Electronic device comprising: a semiconductor body, in particular of Silicon Carbide, SiC, having a first and a second face, opposite to each other along a first direction; and an electrical terminal at the first face, insulated from the semiconductor body by an electrical insulation region. The electrical insulation region is a multilayer comprising: a first insulating layer, of a Silicon Oxide, in contact with the semiconductor body; a second insulating layer on the first insulating layer, of a Hafnium Oxide; and a third insulating layer on the second insulating layer, of an Aluminum Oxide.

Abstract: Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.