Abstract: An SOI substrate has a first region isolated from a second region. An SiGe layer is deposited on top of the SOI substrate in the second region. The substrate is subjected to a thermal oxidation process which drives in Ge from the SiGe layer to form an SiGeOI structure in the second region and an overlying oxide layer. If the SOI substrate is exposed in the first region, the thermal oxidation process further produces an oxide layer overlying the first region. The oxide layer(s) is(are) removed to expose an Si channel layer in the first region and an SiGe channel layer in the second region. Transistor gate stacks are formed over each of the Si channel layer and SiGe channel layer. Raised source and drain regions are formed from the Si channel layer and SiGe channel layer adjacent the transistor gate stacks.

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract: A method for providing a leadframeless package structure is provided. The method includes providing a temporary carrier. The temporary carrier is coupled to a metal foil layer with a temporary adhesive layer. An integrated circuit chip is coupled to the metal foil layer. The temporary adhesive layer and the temporary carrier are removed to form the leadframeless package structure after molding.

Abstract: A reduced area delay circuit and method are disclosed. The delay circuit uses a constant current source and a constant current drain to charge and discharge a capacitor and thus control the delay time of the delay circuit. The constant current source and drain can be implemented using current mirrors formed by configuring MOSFET transistors in a common source configuration. The delay circuit method includes the steps of receiving an input signal, delaying the input signal by using a constant current source or drain in combination with a capacitor, and then buffering the voltage on the capacitor using two inverters. A programmable delay circuit is also disclosed by adding additional pairs of current mirrors to the delay circuit and selectively enabling the pairs to adjust the delay time.