Abstract: An RF heating system for a substrate or substrates including a susceptor for supporting the substrate; one or more RF heating coils; and a platen disposed between the RF heating coil and the substrate. The platen is constructed of materials that become heated under RF energy, which will then radiate heat into the susceptor and the substrate. In this way the susceptor need not be constructed of materials that become heated under RF energy thus minimizing levitation. The platen provides a uniform temperature profile across the substrates, benefiting from a more diffused heat source. The RF heating system may also be utilized in CVD apparatus that deposits materials on a continuous tape or roll.

Abstract: A method for making high purity GeS and related compounds such as Germanium Silicon Sulfide (GeSiS); Copper Sulfide (CuS); Silicon Sulfide (SiS); Zinc Sulfide (ZnS) and Iron Sulfide (FeS) at low temperatures and pressures in a Chemical Vapor Deposition (CVD) process for solid electrolyte memory elements and other applications. Disclosed is a method of generating a proper chemical and energy environment for the formation of GeS and related compounds on a specific surface. The produced films have utility in memory and other devices. The technology offers cost savings and the advantage of low temperature film creation through the use of plasma assisted deposition—increasing its compatibility for use not only on silicon (or ceramic or glass) non metal substrates as well as polymer or thin metal foil substrates which would be damaged by higher temperature processes.

Abstract: Apparatus for supporting the heater filament of the reactor in Chemical Vapor Deposition (CVD) system. The apparatus includes a recess or aperture disposed in a filament support plate; an electrically isolated rod supporting at least one of the coils of the filament, and extends into the recess or aperture in the support plate. A thermally insulating sleeve surrounds the rod. The post and sleeve arrangement provide a controlled and adjustable amount of lateral and vertical movement to the rod and filament to prevent damage to the filament caused by thermal expansion while providing lateral and vertical support to the filament.

Abstract: Compositionally engineered CeXMnYO3 (Cerium Manganate) and electronic devices based thereon When the proportion of cerium to manganese in CeXMnYO3 is altered, a number of the electrical properties of the material are affected, among them are the ferroelectric and dielectric constant. By adjusting the proportion of cerium to manganese the deposited material can be either dielectric or ferroelectric. A silicon based transistor having a gate of ferroelectric CeXMnYO3 forms a single transistor non volatile memory cell, which does not require additional layers and thus greatly reduces architecture complexity and utilizes the standard operating voltage of a DRAM. A silicon based device having a capacitor, inductor or resistor made of dielectric CeXMnYO3 forms a passive structure which does not require additional layers and thus greatly reduce architecture complexity.