Patents Assigned to Sundew Technologies, LLC
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Patent number: 7682454Abstract: A seal-protected perimeter partition valve apparatus (450) defines a vacuum and pressure sealed space (401) within a larger space (540) confining a substrate processing chamber with optimized geometry, minimized footprint and 360° substrate accessibility. A compact perimeter partitioned assembly (520) with seal protected perimeter partition valve (450) and internally contained substrate placement member (480) further provides processing system modularity and substantially minimized system footprint.Type: GrantFiled: August 9, 2004Date of Patent: March 23, 2010Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20100043888Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.Type: ApplicationFiled: November 6, 2009Publication date: February 25, 2010Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20100003404Abstract: A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.Type: ApplicationFiled: September 16, 2009Publication date: January 7, 2010Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
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Patent number: 7635502Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.Type: GrantFiled: March 10, 2005Date of Patent: December 22, 2009Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
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Patent number: 7608539Abstract: A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.Type: GrantFiled: June 18, 2007Date of Patent: October 27, 2009Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20080094775Abstract: Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.Type: ApplicationFiled: July 20, 2005Publication date: April 24, 2008Applicant: Sundew Technologies, LLCInventors: Anat Sneh, Ofer Sneh
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Publication number: 20070243325Abstract: A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.Type: ApplicationFiled: June 18, 2007Publication date: October 18, 2007Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20070187634Abstract: Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals.Type: ApplicationFiled: October 18, 2004Publication date: August 16, 2007Applicant: SUNDEW TECHNOLOGIES, LLCInventor: Ofer Sneh
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Patent number: 7250083Abstract: A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.Type: GrantFiled: March 7, 2003Date of Patent: July 31, 2007Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20070012402Abstract: A sub-atmospheric downstream pressure control apparatus (200) includes a first flow restricting element (FRE) (202); a pressure control chamber (PCC) (204) located in serial fluidic communication downstream from the first FRE; a second FRE (206) located in serial fluidic communication downstream from the PCC; a gas source (208); and a flow controlling device (210) in serial fluidic communication downstream from the gas source and upstream from the PCC.Type: ApplicationFiled: July 8, 2004Publication date: January 18, 2007Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20050160983Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.Type: ApplicationFiled: March 10, 2005Publication date: July 28, 2005Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
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Patent number: 6911092Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.Type: GrantFiled: January 17, 2003Date of Patent: June 28, 2005Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
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Patent number: 6897508Abstract: A thin film integrated multilayer capacitor with substantially enhanced capacitance density suitable for Dynamic Random Access Memory (DRAM) and other integrated capacitor applications is formed into a trench or cavity structure with a completely self-aligned atomic layer deposition (ALD) process flow. Each conductor layer is etched with a wet etch to create recesses between the adjacent insulating layers, which recesses are seamlessly filled with dielectric using an ALD process, so that no part of the conductor is ever exposed to ambient atmosphere. Only silicon-based dielectric materials contact the silicon substrate, and the contact area between silicon and the capacitor is minimized both at the top and the bottom. The dielectric layers comprise Al2O3, ZrO2, or HfO2, which is deposited using an ALD process. Capacitance density is greatly enhanced to a C/? of above 1500 fF/?2.Type: GrantFiled: August 23, 2002Date of Patent: May 24, 2005Assignee: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20030180458Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.Type: ApplicationFiled: January 17, 2003Publication date: September 25, 2003Applicant: Sundew Technologies, LLCInventor: Ofer Sneh
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Publication number: 20030168001Abstract: A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.Type: ApplicationFiled: March 7, 2003Publication date: September 11, 2003Applicant: Sundew Technologies, LLCInventor: Ofer Sneh