Abstract: A method for curing at least in part a photoresist applied to a substrate comprises the following steps: The substrate coated with the photoresist is arranged on a support. The photoresist is subjected to a suitable temperature for curing the photoresist for a first predetermined time period. After the first predetermined time period has passed, the substrate is lifted from the support, rotated, re-placed onto the support and subjected to a suitable temperature for curing the photoresist for a second predetermined time period. This method can be performed with a device for curing at least in part a photoresist applied to a substrate, comprising a chamber, a support which is arranged in the chamber and on which the substrate can be arranged, and a rotating device for rotating the substrate between a first and a second phase of the curing of the photoresist.

Abstract: A spacer displacement device for a wafer illumination unit comprises an actuator, a spacer which can be displaced between an active and an inactive position by the actuator, and a force transmission element which is coupled to the actuator. The force transmission element consists of wire.

Abstract: The invention relates to a method for regulating a light source of a photolithography exposure system which comprises a plurality of LEDs, by means of the following steps: the light output of the individual LEDs in specific wavelength ranges is detected, and the detected light output is compared with a desired light output distribution over the entire spectrum. The LEDs are operated such that the desired spectral light output distribution is achieved in the most precise manner possible. The invention also relates to an exposure assembly for a photolithography device, having a light source which comprises a plurality of LEDs, a control means which controls the electrical power supplied to the individual LEDs, and a sensor which can detect the light output of the LEDs in the respective ranges of the wavelengths.

Abstract: A device for locating and engaging a notch on the perimeter of a circular wafer includes a notch locating component and a first plate. The notch locating component is configured to move linearly along a first axis and includes a front elongated component extending along a second axis perpendicular to the first axis and having a front surface, a back surface opposite to the front surface and a first protrusion extending from the front surface of the elongated component. The first protrusion has a shape complementing the shape of a notch formed on the perimeter of a circular wafer. As the notch locating component is driven toward the perimeter of the circular wafer along the first axis, a distance between the back surface of the elongated component and a front surface of the first plate is measured and the value of the measured distance is used to determine engagement of the first protrusion with the notch.

Abstract: A wafer bonder apparatus, includes a lower chuck, an upper chuck, a process chamber and three adjustment mechanisms. The three adjustment mechanisms are arranged around a top lid spaced apart from each other and are located outside of the process chamber. Each adjustment mechanism includes a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.

Abstract: A chuck for aligning a first planar substrate in parallel to a second planar substrate includes a top plate having a top surface for arrangement of the first planar substrate. A bottom plate is at least one distance measuring sensor configured to measure a distance between the top surface of the top plate and a surface of the second planar substrate, and at least three linear actuators in contact with the top plate and the bottom plate. The method for setting a gap between the first and second planar substrate includes measuring the thickness of the first planar substrate and measuring between a surface of the second planar substrate and the top surface of the top plate. The tilt adjusts between a top surface of the first planar substrate or the chuck and the surface of the second planar substrate by using at least three linear actuators of the chuck.

Abstract: A method for coating substrates provided with vias uses a first step in which the substrate is conditioned and a second step in which the substrate is coated with an electrically insulating material such that the vias are filled up completely.

Abstract: An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

Abstract: Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.

Abstract: Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.

Abstract: A bottle cap adapter for supplying liquids, particularly viscous liquids, comprising: a body part; and a vent tube comprising a first opening and a second opening, the first opening being configured to be put inside a bottle in the vicinity of the bottom of the bottle, wherein the body part further comprises a first surface and a second surface, the first surface being perpendicular to the vent tube and the second surface being parallel to or tilted to the first surface, e.g., by an angle of 0° to 40°, wherein the body part further comprises a channel from the first surface to the second surface, wherein at least one part of the channel comprises a connector extending to the second surface, the connector being complementary to a connector of the bottle, wherein the body part is further configured to be coupled to a bottle supply system, and wherein the vent tube is at least partially located in the channel of the body part.

Abstract: The invention relates to a chuck and a method for suction and holding a wafer by said chuck, wherein the chuck comprises: a flat top face being subdivided into several suction segments, wherein the suction segments are each configured for suctioning a fluid; and a bottom face. The method comprises the steps: bringing, within a fluid, wafer and top face of the chuck into vicinity such that two or more of the suction segments are covered, at least loosely covered, by the wafer; choosing, from the suction segments not yet been activated, a suction segment having a minimal distance to the wafer; activating the suction segment chosen in the previous step; once the wafer in the area of the last-activated suction segment tightly touches the top face of the chuck and as long as at least one suction segment is not yet activated: repeating the foregoing steps.

Abstract: The invention relates to a method and device for expanding the travel or control displacement of linear actuators that is available during an imprinting or embossing stroke. The wedge error compensating head (2) comprises a movable part (4), a stationary part (3) and at least three linear actuators (8). Each linear actuator (8) is connected to one of the parts (3, 4) at one end and to the other of the two parts (4, 3) by wedges (9) at the other end. By means of the wedges (9), it is possible to coarsely or roughly compensate for wedge errors and possible tolerances of individual subcomponents of the system. The linear actuators (8) are only used for fine or precision compensation for the wedge error. In this way, sufficient control displacement is available for the imprinting stroke with the linear actuators.

Abstract: A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly.

Abstract: An improved wafer carrier device for carrying and holding semiconductor wafers that have a thickness of below 100 micrometers includes a transportable wafer chuck having an enclosed vacuum reservoir and a top surface configured to support a wafer. The top surface has one or more through-openings extending from the top surface to the vacuum reservoir and the wafer is held onto the top surface via vacuum from the vacuum reservoir drawn through the through-openings.

Abstract: An apparatus for temporary bonding first and second wafers includes, a first coating chamber configured to apply a first adhesive layer upon a first surface of a first wafer; a second coating chamber configured to apply a second adhesive layer upon a first surface of a second wafer; a curing chamber configured to cure the first adhesive layer of the first wafer; a bonder module comprising an upper chuck assembly and a lower chuck assembly arranged below and opposite the upper chuck assembly. The upper chuck assembly is configured to hold the first wafer so that its first surface with the cured first adhesive layer faces down. The lower chuck assembly is configured to hold the second wafer so that the second adhesive layer faces up and is opposite to the cured first adhesive layer. The lower chuck assembly is configured to move upwards and thereby to bring the second adhesive layer in contact with the cured first adhesive layer.

Abstract: A system for mechanically holding a substrate during processing includes a closeable processing chamber and an upper block assembly located inside the processing chamber and configured to hold a wafer via three mechanical holding assemblies. The three mechanical holding assemblies protrude above a cover of the wafer processing chamber and are configured to hold the wafer at an edge of the wafer and to be adjusted from outside of the processing chamber. Two of the mechanical holding assemblies are lockable in position relative to the wafer edge and one of the mechanical holding assemblies is configured to maintain a hold preload on the wafer edge via a preload mechanism.

Abstract: A method for temporary bonding first and second wafers includes, applying a first adhesive layer upon a first surface of a first wafer and then curing the first adhesive layer. Next, applying a second adhesive layer upon a first surface of a second wafer. Next, inserting the first wafer into a bonder module and holding the first wafer by an upper chuck assembly so that its first surface with the cured first adhesive layer faces down. Next, inserting the second wafer into the bonder module and placing the second wafer upon a lower chuck assembly so that the second adhesive layer faces up and is opposite to the first adhesive layer. Next, moving the lower chuck assembly upwards and bringing the second adhesive layer in contact with the cured first adhesive layer, and then curing the second adhesive layer.

Abstract: A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly.

Abstract: Described methods and apparatus provide a controlled perturbation to an adhesive bond between a device wafer and a carrier wafer. The controlled perturbation, which can be mechanical, chemical, thermal, or radiative, facilitates the separation of the two wafers without damaging the device wafer. The controlled perturbation initiates a crack either within the adhesive joining the two wafers, at an interface within the adhesive layer (such as between a release layer and the adhesive), or at a wafer/adhesive interface. The crack can then be propagated using any of the foregoing methods, or combinations thereof, used to initiate the crack.