Abstract: A high-electron-mobility transistor structure as well as a fabricating method and use thereof are provided. The high-electron-mobility transistor structure includes an epitaxial structure as well as a source electrode, a drain electrode and a gate electrode, where the epitaxial structure includes a first semiconductor layer and a second semiconductor layer, a carrier channel is formed between the first semiconductor layer and the second semiconductor layer, and the source electrode is electrically connected with the drain electrode through the carrier channel; a coincidence rate between the orthographic projection of the gate foot of the gate electrode on the first semiconductor layer and the orthographic projection of the second semiconductor layer on the first semiconductor layer is more than 80%.

Abstract: The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one ?-(AlxGa1-x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99?x?0.01; and forming gallium oxide epitaxial layers on the ?-(AlxGa1-x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of ?-Ga2O3 and ?-Al2O3, but also effectively reduce the defect density of ?-Ga2O3 epitaxial film, thus further improving the crystal quality of the ?-Ga2O3 epitaxial film materials.

Abstract: A recyclable nano composite, a preparation method, and an application thereof are provided. The preparation method includes providing a reinforcement material including a conductive material, or, a combination of the conductive material and an insulating material; directly mixing the reinforcement material with a matrix material, or, molding the reinforcement material to form a film, fiber or three-dimensional network structure formed by the reinforcement material, and then compounding the film, fiber or three-dimensional network structure with the matrix material to obtain the recyclable nano composite. The present disclosure further discloses a recycling method of a reinforcement material. The recyclable nano composite provided by the present disclosure has high strength, high toughness, conductivity, electromagnetic shielding and other properties; furthermore, by simple treatment, the reinforcement material can be recycled.

Abstract: A film bulk acoustic resonator and a fabricating method thereof is provided. The fabricating method includes: fabricating a lower electrode on a first surface of an SOI substrate; forming piezoelectric layers on the first surface of the SOI substrate and the lower electrode; forming top electrodes on the piezoelectric layers; processing an air cavity on a second surface of the SOI substrate, wherein the second surface and the first surface are oppositely arranged. The fabricating method simplifies a preparation process of FBAR, a quality of a AlN film crystal grown though the fabrication method is high, an improvement of a device performance is facilitated, and meanwhile a thickness of a top silicon is controlled through a position of a silicon injected oxygen isolation to regulate a frequency of the film bulk acoustic resonator.

Abstract: A recyclable nano composite, a preparation method, and an application thereof are provided. The preparation method includes providing a reinforcement material including a conductive material, or, a combination of the conductive material and an insulating material; directly mixing the reinforcement material with a matrix material, or, molding the reinforcement material to form a film, fiber or three-dimensional network structure formed by the reinforcement material, and then compounding the film, fiber or three-dimensional network structure with the matrix material to obtain the recyclable nano composite. The present disclosure further discloses a recycling method of a reinforcement material. The recyclable nano composite provided by the present disclosure has high strength, high toughness, conductivity, electromagnetic shielding and other properties; furthermore, by simple treatment, the reinforcement material can be recycled.

Abstract: A narrow linewidth laser includes a passive ring resonant cavity, an FP resonant cavity, and a first gain region. The passive ring resonant cavity and the FP resonant cavity are combined to form an M-Z (Mach-Zehnder interference structure) compound external cavity structure, and the M-Z compound external cavity structure is at least used for providing wavelength selection and narrowing laser linewidth. The first gain region is provided on the outer side of the M-Z compound external cavity structure and is used for providing a gain for the whole laser. The narrow linewidth laser is simple in structure, high in side-mode suppression ratio, narrow in linewidth, and high in output power. By further integrating a PN junction region or MOS junction region, broadband and rapid tuning with low power consumption can also be achieved, and tuning management is simple.

Abstract: An interconnected electrode structure, a method of manufacturing same, and a use of same are provided. The interconnected electrode structure includes an insulating base material, a through hole, a first conductive body, and a second conductive body. The insulating base material includes a first surface and a second surface which face away from each other. The through hole penetrates through the insulating base material in a thickness direction. The first conductive body is formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface. The second conductive body is formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and the second conductive body is electrically combined with the first conductive body to form a conductive channel in the insulating base material.

Abstract: The disclosure discloses an organic photoactive layer composite ink, an organic solar cell and preparation methods thereof. The organic photoactive layer composite ink includes an electron donor material, an electron acceptor material, an organic amine compound and an organic solvent. According to the disclosure, through an interaction between the organic amine compound and a photoactive layer material molecule, the photochemical reaction of the active layer molecule can be effectively inhibited, the photostability of the photoactive layer material is significantly improved, and hence the stability of the solar cell is greatly improved. The organic solar cell prepared by the disclosure has the advantages of high stability, long use service life and the like, and working properties such as energy conversion efficiency are also effectively improved; meanwhile, the organic solar cell is simple and convenient in preparation process, low in material cost and high in economic benefits.

Abstract: The present application discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises manufacturing a semiconductor material layer comprising two laminated semiconductor layers between which an etching transition layer is provided; and etching a part of one of semiconductor layers located in a selected region until etching is stopped after reaching or entering the etching transition layer, subjecting the part of the etching transition layer located in the selected region to thermal decomposition through thermal treatment to be completely removed, and realizing termination of thermal decomposition on another semiconductor layer, so as to precisely form a trench structure in the semiconductor material layer.

Abstract: The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of Al1-nGanN epitaxial layer on the sacrificial layer, wherein 0<n?1; growing a nanopillar array containing GaN materials on the Al1-nGanN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials.

Abstract: An in-situ hydrophobically modified aramid nano aerogel fiber as well as a preparation method and uses thereof are provided. The preparation method includes: providing an aramid nano spinning solution; preparing a hydrophobically modified aramid nano aerogel fiber by using a spinning technology, wherein the coagulating bath adopted by the spinning technology includes a first organic solvent and a halogenated reagent including a monochloroalkane, a monochloroalkane, a dibromoalkane, a dichloroalkane and a trichloroalkane; and then drying to obtain the in-situ hydrophobically modified aramid nano aerogel fiber. The in-situ hydrophobically modified aramid nano aerogel fiber has a unique three-dimensional porous network structure, low heat conductivity, high porosity, high tensile strength and elongation at break, a certain spinnability and structure stability, and can be applied to the field of textiles. A fabric knitted with the hydrophobic fibers has a self-cleaning ability.

Abstract: There is provided mechanisms for handling credentials of an IoT SAFE applet. A method is performed by a communication device. The communication device stores the IoT SAFE applet in a first security domain of a subscription module in the communication device. The first security domain is free from any subscription profile and is different from any security domain of the subscription module for storing subscription profiles. The IoT SAFE applet is independent from any MNO. The communication device is without credentials for the IoT SAFE applet for establishing secure communication for the communication device with a network node. The method comprises obtaining credentials for the IoT SAFE applet from the network node. The method comprises storing the credentials in the first security domain of the subscription module. The credentials are, after successful storage, accessible only from within the first security domain.

Abstract: A multicolor electrochromic structure comprises a working electrode, an electrolyte and an auxiliary electrode. The electrolyte is distributed between the working electrode and the auxiliary electrode. The working electrode comprises an electrochromic layer which comprises a first reflective surface and a second reflective surface arranged face to face in parallel. A dielectric layer is arranged between the first and the second reflective surface. The first and the second reflective surfaces and the dielectric layer form an optical cavity. The dielectric layer is fabricated by an electrochromic material. The multicolor electrochromic structure can combine a structural color with electrochromism to display various color changes; it features a simple structure, low costs and a wide application prospect, and it is easy to be fabricated.

Abstract: A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

Abstract: A flexible photoelectric device module and a method for preparing same are provided. The module includes a plurality of photoelectric device units. One photoelectric device unit includes a bottom electrode, a functional layer and a top electrode. The bottom electrode includes a light-transmittance insulating base, and a first electrode, a second electrode and a third electrode which are arranged on two side surfaces of the base. The first electrode is a transparent electrode. The second electrode and the first electrode are in electric contact with each other. The second electrode and the third electrode are electrically connected through a conducting channel. The conducting channel runs through the base along a thickness direction. The third electrode in one photoelectric device unit is electrically connected to the top electrode or the first electrode in another photoelectric device unit, so that the two photoelectric device units are disposed in series or in parallel.

Abstract: A multicolor electrochromic structure comprises a working electrode, an electrolyte and an auxiliary electrode. The electrolyte is distributed between the working electrode and the auxiliary electrode. The working electrode comprises an electrochromic layer which comprises a first reflective surface and a second reflective surface arranged face to face in parallel. A dielectric layer is arranged between the first and the second reflective surfaces. The first and the second reflective surfaces and the dielectric layer form an optical cavity. The dielectric layer is fabricated by an electrochromic material. The multicolor electrochromic structure can combine a structural color with electrochromism to display various color changes; it features a simple structure, low costs and a wide application prospect, and it is easy to be fabricated.

Abstract: A group III nitride transistor structure capable of reducing a leakage current and a fabricating method thereof are provided. The group III nitride transistor structure includes: a first heterojunction and a second heterojunction which are laminated, wherein the first heterojunction is electrically isolated from the second heterojunction via a high resistance material and/or insertion layer; a first electrode, a second electrode and a first gate which are matched with the first heterojunction, wherein a third semiconductor is arranged between the first gate and the first heterojunction, and the first gate is also electrically connected with the first electrode; a source, a drain and a second gate which are matched with the second heterojunction, wherein the source and the drain are also respectively electrically connected with the first gate and the second electrode, and a sixth semiconductor is arranged between the second gate and the second heterojunction.

Abstract: A narrow linewidth laser includes a passive ring resonant cavity, an FP resonant cavity, and a first gain region. The passive ring resonant cavity and the FP resonant cavity are combined to form an M-Z (Mach-Zehnder interference structure) compound external cavity structure, and the M-Z compound external cavity structure is at least used for providing wavelength selection and narrowing laser linewidth. The first gain region is provided on the outer side of the M-Z compound external cavity structure and is used for providing a gain for the whole laser. The narrow linewidth laser is simple in structure, high in side-mode suppression ratio, narrow in linewidth, and high in output power. By further integrating a PN junction region or MOS junction region, broadband and rapid tuning with low power consumption can also be achieved, and tuning management is simple.

Abstract: The preparation method for fluorescent quantum dots includes: carrying out solvothermal reaction on a first evenly mixed reaction system containing a silver source, a negative ion source and a weakly polar solvent to prepare a silver-based quantum dots precursor; and carrying out ion exchange reaction on a second evenly mixed reaction system containing the silver-based quantum dots precursor, a negative ion source and/or a metal positive ion source to obtain alloyed fluorescent quantum dots with a fluorescence emission peak wavelength of 500-1700 nm and an absolute quantum efficiency of more than 85%. The silver-based quantum dots are prepared through a simple high-temperature solvothermal method and then the alloyed quantum dots are obtained by the ion exchange method, and therefore the synthesis process is simple and controllable. The obtained fluorescent quantum dots can be prepared on large scale, and have adjustable fluorescence emission from visible to near-infrared region and excellent photostability.

Abstract: An in-situ hydrophobically modified aramid nano aerogel fiber as well as a preparation method and uses thereof are provided. The preparation method includes: providing an aramid nano spinning solution; preparing a hydrophobically modified aramid nano aerogel fiber by using a spinning technology, wherein the coagulating bath adopted by the spinning technology includes a first organic solvent and a halogenated reagent including a monochloroalkane, a monochloroalkane, a dibromoalkane, a dichloroalkane and a trichloroalkane; and then drying to obtain the in-situ hydrophobically modified aramid nano aerogel fiber. The in-situ hydrophobically modified aramid nano aerogel fiber has a unique three-dimensional porous network structure, low heat conductivity, high porosity, high tensile strength and elongation at break, a certain spinnability and structure stability, and can be applied to the field of textiles. A fabric knitted with the hydrophobic fibers has a self-cleaning ability.