Abstract: The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

Abstract: The disclosure discloses a method and reagent for improving a yield of selective dispersion of semiconducting carbon nanotubes.

Abstract: A black phosphorus crystal having a high photoelectric response rate, a two-dimensional black phosphorus PN junction, and preparation method and use thereof. The black phosphorus crystal is a single crystal with a spatial point group Cmca (No. 64), cell parameters a=3.2-3.4 ?, b=10.4-10.6 ?, c=4.3-4.5 ?, and an interlayer spacing of 4-6 ?, and is characterized by a high photoelectric response rate, an adjustable semiconductor type, and the like. The two-dimensional black phosphorus PN junction includes a two-dimensional black phosphorus film, a first area of the film forming an n-type semiconductor by n-type doping, a second area of the film is maintained as a p-type semiconductor, and the first area is adjacent to the second area, to enable the n-type semiconductor to be combined with the p-type semiconductor to form the PN junction. The two-dimensional black phosphorus PN junction has properties such as a unidirectional conductivity, or a special photovoltaic effect.

Abstract: A bio-enzyme sensor capable of super-hydrophobic solid-liquid-gas three-phase coexistence and a method for preparing the same. The bio-enzyme sensor comprises, from bottom to top, a base material with super-hydrophobic surface, a catalytic material having the function of catalyzing hydrogen peroxide, and bio-enzyme capable of reacting with a substance to be tested to generate hydrogen peroxide. A sufficient amount of oxygen can be provided for enzymatic reaction by forming a state of solid-liquid-gas three-phase coexistence on the surface of the super-hydrophobic material.

Abstract: The present application discloses a magnetic microchip having a graph code as well as a preparation method and application thereof. The magnetic microchip comprises: a graph code comprising more than one opaque microstructure mainly consisting of colloid aggregates formed by aggregating magnetic solid particles, wherein adjacent magnetic solid particles are isolated at least by an organic molecule and/or an inorganic molecule; and a transparent encapsulating structure at least used for wrapping the opaque microstructure. The magnetic microchip of the present application is prepared by adopting a micromachining process and has high in machining precision and repeatability, the size difference between different batches or between different individuals at the same batch can be ignored, use is convenient, and accuracy of a detection result can be effectively ensured, thereby greatly improving analysis quality.

Abstract: The present disclosure discloses a manufacturing method of a quantum dot structure including: providing a quantum dot film layer on a substrate; providing a first protection film on the quantum dot film layer; providing a patterned array on the first protection film; providing a second protection film on the first protection film and the patterned array to obtain an intermediate body; and performing an annealing process on the intermediate body to obtain the quantum dot structure on the substrate.

Abstract: The present disclosure discloses a saturable absorber mirror of a composite structure, including: a substrate; a buffer layer on the substrate; a distributed Bragg reflective mirror on the buffer layer; a quantum dot or quantum well saturable absorber body on the distributed Bragg reflective mirror; a graphene saturable absorber body on the quantum dot or quantum well saturable absorber body. In the present disclosure, the graphene saturable absorber body is composited with the quantum dot saturable absorber body or the quantum well saturable absorber body to be used as the saturable absorber body in the saturable absorber mirror of the present disclosure. A thermal damage threshold and an optical property stability of the saturable absorber body are improved, and an ultrafast laser pulse with high power and short pulse mode locking, a stable output repetition cycle, a narrow pulse width, and a short response time is implemented.

Abstract: The disclosure discloses an encoded chip based micro-array and a preparation method thereof. In a typical embodiment, the preparation method comprises: providing a carrier, which has at least one fluid accommodating cavity, wherein at least one carrying surface is distributed in the fluid accommodating cavity; uniformly coating the carrying surface with an adhesive; adding a selected fluid to the fluid accommodating cavity till the carrying surface is immersed by the selected fluid; depositing encoded microchips dispersed in the selected fluid on the carrying surface, and enabling the encoded microchips to be combined with the adhesive distributed on the carrying surface; and curing the adhesive, thereby fixing the microchips onto the carrying surface. The disclosure further discloses a biochemical kit based on the micro-array, a biochemical detection system and method, and the like.

Abstract: The disclosure discloses a method and reagent for improving a yield of selective dispersion of semiconducting carbon nanotubes.

Abstract: A flexible conductive diaphragm comprises at least one conductive film, and the conductive film comprises a flexible support layer (1), a flexible sensitive layer (2) overlapped on the flexible support layer (1), a flexible conductive layer (3) overlapped on the flexible sensitive layer (2), and an electrode (4) electrically connected with the flexible conductive layer (3). A method for preparing the flexible conductive diaphragm and a flexible vibration sensor based on the flexible conductive diaphragm are provided. With the combination of the techniques such as the flexible material, the nano-material and the arrayed micro-structure, the flexible vibration sensor has the characteristics of high sensitivity, low preparation cost, light weight, small thickness, small size, and being foldable and flexible, and can be applied in wearable or adherable electronic devices.

Abstract: A chip assembly for measuring an electrochemical reaction on a solid-liquid phase interface in situ, comprising a first electrode, a second electrode, a first insulating film, a second insulating film, a third insulating film, a fourth insulating film and an upper chip and a lower chip which are oppositely arranged and of which two sides are correspondingly combined in a sealing manner; a through hole is provided on the upper chip; the first insulating film under the through hole is provided with the first electrode; a groove opposite to the through hole is provided on the lower chip; and the fourth insulating film arranged at one side of the groove is provided with the second electrode. The chip assembly dispenses with a specially-made sample rod, thereby substantially reducing test cost; and meanwhile, a lattice structure of a first electrode is also beneficial for observing topography change of a to-be-tested sample.

Abstract: A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

Abstract: The invention provides a piezoresistive electronic skin, a preparation method and a use thereof. The piezoresistive electronic skin uses carbon nanotube film as the conductive layer and uses materials provided with micro-nano patterns, such as polydimethylsiloxane, polyethylene terephthalate, polyvinyl alcohol, polyvinyl formal, polyethylene, and so on, as the substrate, enabling the substrate has advantages of high flexibility and being pliable, and it needs low operating voltage and little power consumption, but has high sensitivity and short response time. More importantly, the invention uses the patterned flexible substrate as the basis, greatly improving the sensitivity of electronic skin reacting to tiny applied force from outside. The invention also provides a capacitive electronic skin and a preparation method thereof. Further, the invention also provides a use of the piezoresistive electronic skin or the capacitive electronic skin on speech recognition, pulse detection, medical robot, etc.