Abstract: The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}-3.
Type:
Grant
Filed:
June 3, 2021
Date of Patent:
May 30, 2023
Assignee:
TAISIC MATERIALS CORP.
Inventors:
Dai-Liang Ma, Bang-Ying Yu, Bo-Cheng Lin
Abstract: The present disclosure provides semi-insulating single-crystal silicon carbide bulk material and powder which include one polytype single crystal. The semi-insulating single-crystal silicon carbide bulk material has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3.
Type:
Application
Filed:
June 3, 2021
Publication date:
December 23, 2021
Applicant:
TAISIC MATERIALS CORP.
Inventors:
Dai-Liang MA, Bang-Ying YU, Bo-Cheng LIN
Abstract: The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}-3.
Type:
Application
Filed:
June 3, 2021
Publication date:
December 23, 2021
Applicant:
TAISIC MATERIALS CORP.
Inventors:
Dai-Liang MA, Bang-Ying YU, Bo-Cheng LIN
Abstract: The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3, and the first particle diameter is between 50 ?m and 350 ?m; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal sili
Type:
Application
Filed:
June 3, 2021
Publication date:
December 23, 2021
Applicant:
TAISIC MATERIALS CORP.
Inventors:
Dai-Liang MA, Bang-Ying YU, Bo-Cheng LIN