Abstract: A method includes the following operations: receiving design rule violations of a first layout; classifying, according to first chip features of the first layout, a first violation of the design rule violations into a first class of predefined classes; generating a first vector array for at least one of the first chip features of the first layout, that is associated with the first violation; selecting, according to the first vector array, first operations from pre-stored operations; generating a second layout based on the first layout and the first operations.

Abstract: Integrated circuit methods are described. The methods include providing a photomask that includes two main features for two via openings and further includes an optical proximity correction (OPC) feature linking the two main features; forming a hard mask layer on a substrate, the hard mask layer including two trench openings; forming a patterned resist layer over the hard mask layer using the photomask, wherein the patterned resist layer includes a peanut-shaped opening with two end portion aligned with the two trench openings of the hard mask layer, respectively; and performing a first etch process to the substrate using the hard mask layer and the patterned resist layer as a combined etch mask.

Abstract: The present disclosure provides a semiconductor device which includes a semiconductor substrate, a first gate structure disposed over the substrate, the first gate structure including a first gate electrode of a first conductivity type, a second gate structure disposed over the substrate and proximate the first gate structure, the second gate structure including a second gate electrode of a second conductivity type different from the first conductivity type, a first doped region of the first conductivity type disposed in the substrate, the first doped region including a first lightly doped region aligned with a side of the first gate structure, and a second doped region of the second conductivity type disposed in the substrate, the second doped region including a second lightly doped region aligned with a side of the second gate structure.

Abstract: A method for forming a patterned layer within an integrated circuit. There is first provided a substrate having formed thereupon a blanket target layer. Formed upon the blanket target layer is a blanket focusing layer, where the blanket focusing layer is formed from an organic material and where the blanket focusing layer is susceptible to a reproducible negative etch bias within a first etch method employed in etching the blanket focusing layer to form a patterned focusing layer. There is then formed upon the blanket focusing layer a blanket photoresist layer which is photoexposed and developed to form a patterned photoresist layer. There is then etched through the first etch method the blanket focusing layer to form the patterned focusing layer while employing the patterned photoresist layer as a first etch mask layer. The patterned focusing layer so formed has the reproducible negative etch bias with respect to the patterned photoresist layer.