Patents Assigned to Tansphorm Inc.
  • Enhancement mode gallium nitride power devices
    Patent number: 8193562
    Abstract: Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: June 5, 2012
    Assignee: Tansphorm Inc.
    Inventors: Chang Soo Suh, Umesh Mishra