Abstract: A vertical Hall sensor structure having a substrate layer, a semiconductor area of a first conductivity type, at least a first, a second and a third semiconductor contact area of the first conductivity type extending from an upper surface of the semiconductor area into the semiconductor area, and at least a first semiconductor contact area of a second conductivity type, wherein the semiconductor contact areas of the first conductivity type are spaced apart from each other and a metal connection contact layer is arranged on each semiconductor contact area of the first conductivity type. The first semiconductor contact area of the second conductivity type is adjacent to the first semiconductor contact area of the first conductivity type or is spaced at a distance of at most 0.2 ?m from the first semiconductor contact area of the first conductivity type.

Abstract: An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.

Abstract: A packaged IC component having a semiconductor body and a printed circuit board. The semiconductor body includes a monolithically integrated circuit and at least two metal contact areas. The printed circuit board has a first and second region and a top and a bottom. At least two formed terminal contacts and two conductive traces are connected to the terminal contacts, and the terminal contacts are designed as contact holes passing through the printed circuit board, and are arranged in the first region of the printed circuit board. The two metal contact areas are connected to the conductive traces by bond wires, and the semiconductor body is implemented as a die. The die is arranged in the second region on the top of the printed circuit board, and the semiconductor body and the bond wires are completely covered with a potting compound on the top of the printed circuit board.

Abstract: A Hall sensor has a Hall sensor element, having multiple connection locations and a current supply source or voltage supply source, which has a first and a second supply connector for output of a supply current or a supply voltage. The first supply connector is connected or can be connected with a first connection location to feed a current into the Hall sensor element, and the second supply connector is connected or can be connected with a second connection location of the Hall sensor element. The Hall sensor has a NAND gate, which is connected with the first connection location of the Hall sensor element using a first input, and with the second connection location of the Hall sensor element using a second input, and has an output for output of a first error signal.

Abstract: A Hall sensor structure comprising a semiconductor body of a first conductivity type, a well region of a second conductivity type extending from a top side of the semiconductor body into the semiconductor body, at least three first semiconductor contact regions of the second conductivity type, each extending from a top side of the well region into the well region, at least one second semiconductor contact region of a second conductivity type, wherein the first semiconductor contact regions are spaced apart from one another and from an edge of the well region, a metallic connection contact layer is arranged on each first semiconductor contact region, the at least one second semiconductor contact region extends along the top side of the semiconductor body at least partially around the well region.

Abstract: A measuring system having a magnetic device for generating a magnetic field and at least one magnetic field sensor for detecting a flux density of the magnetic field, at least in a first spatial direction. The magnetic device has a top side facing the magnetic field sensor, the magnetic field sensor is spaced apart from the top side of the magnetic device, the magnetic device has a main magnet, having two poles, with a main magnetizing direction for generating a main magnetic field and at least one secondary magnet, having two poles, with a secondary magnetization direction for generating a secondary magnetic field, the main magnet has larger dimensions than the at least one secondary magnet, the magnetic field is formed by superposition of the main magnetic field and the secondary magnetic field, the secondary magnetic field at least partially compensates the main magnetic field in the first spatial direction.

Abstract: A semiconductor sensor structure is provided which has a top side and a bottom side and includes a first semiconductor wafer, a second semiconductor wafer, and an insulating layer. The second semiconductor wafer includes a substrate layer having an integrated circuit, formed on the front side, with at least one metal terminal contact formed on the front side. The front side of the second semiconductor wafer and a front side of the first semiconductor wafer are each formed on the insulating layer. The first semiconductor wafer has a semiconductor layer with a three-dimensional Hall sensor structure having a sensor area formed of a monolithic semiconductor body and extending from the backside to the front side of the semiconductor layer. At least three mutually spaced apart first metal terminal contacts are on the front side and at least three mutually spaced apart second metal terminal contacts are on the backside.

Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.

Abstract: A component is provided comprising at least one substrate, at least one magnetic field sensor and at least one trench in the at least one substrate surrounds the at least one magnetic field sensor at least partially. At least one cap covers the at least one trench and the at least one magnetic field sensor, and at least one layer element arranged between the at least one cap and the at least one substrate.

Abstract: A system for monitoring a state, for example a filling state of a container, with a first sensor which in operation produces a measured value, and a second sensor which in operation produces a second, discrete measured value. The first measured value and the second measured value are forwarded to an evaluation unit via a common line.

Abstract: A semiconductor sensor structure that includes a first and a second semiconductor wafer. The second semiconductor wafer has a substrate with integrated circuit with at least one metallic terminal contact, and the first semiconductor wafer has a semiconductor layer of a second conductivity type with a three-dimensional Hall sensor structure with a sensor region and at least three first metallic terminal contacts that are spaced apart from one another are formed on a front, and at least three second metallic terminal contacts that are spaced apart from one another are formed on a back. The terminal contacts are each formed on a highly doped semiconductor contact region of a second conductivity type and are arranged at an offset from the second terminal contacts in a projection perpendicular to the front.

Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

Abstract: A measuring system for determining the position of a transducer along a z-direction, having a semiconductor body having a surface, a back surface, at least one connection contact and at least one magnetic field sensor which is sensitive in the z-direction, a carrier having a front side, rear side and electrically conductive regions, a magnet for producing a magnetic field, having a first magnetic pole formed along a first surface and an axis of symmetry extending perpendicular to the first surface, wherein between at least one connection contact of the semiconductor body and at least one conductor track of the carrier, there is an electrical operative connection, the first surface of the magnet being arranged parallel to the z-direction and the axis of symmetry of the magnet being arranged perpendicular to the z-direction, the transducer having an end face facing the magnetic field sensor.

Abstract: A calibration method for a Hall sensor having a Hall sensitive layer with four electrical contacts and a first field plate, wherein, at a first temperature and at a first magnetic flux density, a resistance value of the Hall sensitive layer is determined for each of at least three different field plate voltages present at the field plate, a calibration curve is produced from the at least three resistance values, a deviation value of the calibration curve is determined from a reference calibration curve, and the field plate voltage that is present at the first field plate or an operating voltage that is present at the sensitive layer is readjusted by a correction value corresponding to the deviation value.

Abstract: A measuring system for determining an angle of rotation of a shaft, which is rotatable about an axis of rotation, having a magnetically conductive encoder, which is spaced from the axis of rotation and fixedly connected to the shaft, a magnet unit with a permanent magnet, and an intermediate sensor unit having two magnetic field sensors. The permanent magnet has a magnetization extending parallel to the axis of rotation, and a circular-cylindrical recess having a bottom, an axis of symmetry extending perpendicular to the bottom, and a diameter, the sensor unit being completely arranged within the recess and stationary with respect to the permanent magnet. The first distance of the encoder from the axis of rotation being less than half the diameter of the recess, the encoder being arranged in a direction parallel to the axis of rotation at a second distance from the sensor unit.

Abstract: A position determining sensor unit having a number of sensors arranged at predetermined positions along a path, and a transducer. The transducer has a first end which is moveable at least along the entire path, and a length running parallel to the path. Each sensor has a first supply voltage connection, a second supply voltage connection and a switching output, and wherein the switching output is switched into an On-state or an Off-state as a function of the threshold value of a sensor signal being exceeded or undershot. The supply voltage connection of each sensor is connected to a supply voltage, and a first sensor is arranged at a beginning of the path and a last sensor is arranged at an end of the path so that the second supply voltage connection of the first sensor is connected to a reference potential and the first sensor has a power consumption.

Abstract: A conveyor device for conveying an object with an identification device. The conveyor device comprises a plurality of rollers, connected drive motors for driving the rollers, a transmitter, a receiver for detecting the distance of the identification device and a control device for controlling the connected drive motors.

Abstract: Magnetic field compensation device having a first bar-shaped flux concentrator and a second bar-shaped flux concentrator, wherein the first flux concentrator and the second flux concentrator are separated from one another in a y-direction, and the longitudinal axis of the first flux concentrator and the longitudinal axis of the second flux concentrator are arranged to be substantially parallel to one another. A control unit is in an operative electrical connection with the magnetic field sensor and the compensating coil, and the control unit is equipped to control the compensating current through the compensating coil using a measured signal from the magnetic field sensor in such a manner that, for an external magnetic field formed in the x-direction at the location of the magnetic field sensor, the magnetic field is substantially compensated.

Abstract: A test matrix adapter device having a plurality of segments arranged in a plane, the respective segments have line-shaped and column-shaped frame sections, and the segments are connected to one another in a form-fitting manner by the frame sections. Semiconductor receiving devices are arranged within the segments, that each have a plurality of first contact surfaces that are spaced apart from one another. The semiconductor receiving device are form-fittingly connected by webs to the frame sections of an assigned segment. The semiconductor receiving device has a bottom side and a base region at least partially enclosed by a frame, and an outer side. The column-shaped frame sections have projections that have second contact surfaces that are connected by conductor tracks to the first contact surfaces. The semiconductor receiving device adapted to receive a packaged semiconductor component with terminal contacts and to connect the terminal contacts to the first contact surfaces.

Abstract: A position determining unit is provided that has a number of sensor units arranged at positions along a path, and a transducer. Each sensor unit has a carrier, a first and second supply voltage connection, a switching output, a measuring unit and a bias magnet comprising two poles. The measuring unit is arranged on the carrier and has at least one magnetic field sensor, wherein the switching output is switched into an On or Off-state as a function of a threshold value exceeding or falling short of a sensor signal. The first supply voltage connection of each sensor unit is connected to a supply voltage, wherein a first sensor unit is arranged at a beginning of the path and a last sensor unit is arranged at the end of the path. The second supply voltage connection of the first sensor unit is connected to a reference potential.