Patents Assigned to TECH SEMICONDUCOR SINGAPORE PTE. LTD.
  • Method for depositing a very high phosphorus doped silicon oxide film
    Publication number: 20040119145
    Abstract: A thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer comprising the steps of: loading an SACVD device with a silicon oxide wafer; depositing a phosphorus doped oxide (PSG) layer on the USG layer using pure oxygen and a phosphorus and silicon source; purging the SACVD device; and depositing a boron and phosphorus doped oxide (BPSG) layer on the PSG layer.
    Type: Application
    Filed: September 13, 2001
    Publication date: June 24, 2004
    Applicant: TECH SEMICONDUCOR SINGAPORE PTE. LTD.
    Inventors: Jian Sun, Hing Ho Au, Yew Hoong Phang