Patents Assigned to Technical Research & Development Institute Ministry of Defense of Japan
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Publication number: 20130146844Abstract: A first electrode layer is disposed on a substrate and a first active layer is disposed thereon. The first active layer includes a first barrier layer and a plurality of first quantum dots that are distributed in the first barrier layer and have a band gap narrower than that of the first barrier layer. A second electrode layer is disposed on the first active layer. On the second active layer, a second active layer is disposed. The second active layer includes a second barrier layer and a plurality of second quantum dots that are distributed in the second barrier layer and have a band gap narrower than that of the second barrier layer. A third electrode layer is disposed on the second active layer. The first quantum dots are larger than the second quantum dots.Type: ApplicationFiled: December 4, 2012Publication date: June 13, 2013Applicants: Fujitsu Limited, Technical Research & Development Institute Ministry of Defense, JapanInventors: Technical Research & Development Institute Minis, Fujitsu Limited
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Patent number: 8395106Abstract: An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.Type: GrantFiled: August 4, 2009Date of Patent: March 12, 2013Assignees: Technical Research & Development Institute Ministry of Defense of Japan, Fujitsu LimitedInventors: Minoru Doshida, Mitsuhiro Nagashima, Michiya Kibe, Hiroyasu Yamashita, Hironori Nishino, Yusuke Matsukura, Yasuhito Uchiyama
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Patent number: 8373155Abstract: An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.Type: GrantFiled: August 3, 2009Date of Patent: February 12, 2013Assignees: Technical Research & Development Institute Ministry of Defense of Japan, Fujitsu LimitedInventors: Toshihiro Okamura, Mitsuhiro Nagashima, Michiya Kibe, Hironori Nishino, Yasuhito Uchiyama, Yusuke Matsukura
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Publication number: 20100032552Abstract: An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.Type: ApplicationFiled: August 4, 2009Publication date: February 11, 2010Applicants: TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENSE OF JAPAN, FUJITSU LIMITEDInventors: Minoru Doshida, Mitsuhiro Nagashima, Michiya Kibe, Hiroyasu Yamashita, Hironori Nishino, Yusuke Matsukura, Yasuhito Uchiyama
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Publication number: 20100032652Abstract: An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.Type: ApplicationFiled: August 3, 2009Publication date: February 11, 2010Applicants: TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENSE OF JAPAN, FUJITSU LIMITEDInventors: Toshihiro Okamura, Mitsuhiro Nagashima, Michiya Kibe, Hironori Nishino, Yasuhito Uchiyama, Yusuke Matsukura
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Publication number: 20100032651Abstract: A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots.Type: ApplicationFiled: August 3, 2009Publication date: February 11, 2010Applicants: TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENSE OF JAPAN, FUJITSU LIMITEDInventors: Toshihiro Okamura, Mitsuhiro Nagashima, Michiya Kibe, Ryo Suzuki, Yasuhito Uchiyama, Hironori Nishino