Patents Assigned to Tekna
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Patent number: 9435007Abstract: A titanium metal production apparatus is provided with (a) a first flow channel that supplies magnesium in a state of gas, (b) a second flow channel that supplies titanium tetrachloride in a state of gas, (c) a gas mixing section in which the magnesium and titanium tetrachloride in a state of gas are mixed and the temperature is controlled to be 1600° C. or more, (d) a titanium metal deposition section in which particles for deposition are arranged so as to be movable, the temperature is in the range of 715 to 1500° C., and the absolute pressure is 50 kPa to 500 kPa, and (e) a mixed gas discharge section which is in communication with the titanium metal deposition section.Type: GrantFiled: November 16, 2011Date of Patent: September 6, 2016Assignees: HITACHI METALS, LTD., TEKNA PLASMA SYSTEMS INC.Inventors: Gang Han, Tatsuya Shoji, Shujiroh Uesaka, Mariko Fukumaru, Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
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Patent number: 9380693Abstract: A plasma confinement tube for use in an induction plasma torch is disclosed. The plasma confinement tube defines a geometrical axis and an outer surface. The plasma confinement tube includes a capacitive shield comprising a film of conductive material applied to the outer surface of the plasma confinement tube and segmented into axial strips. The axial strips are interconnected at one end. Axial grooves are machined in the outer surface of the plasma confinement tube, and interposed between the axial strips. The conductive film may have a thickness smaller than a skin-depth calculated for a frequency of operation of the induction plasma torch and an electrical conductivity of the conductive material of the film.Type: GrantFiled: February 2, 2012Date of Patent: June 28, 2016Assignee: Tekna Plasma Systems Inc.Inventors: Maher I. Boulos, Nicolas Dignard, Alexandre Auger, Jerzy Jurewicz, Sébastien Thellend
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Patent number: 9163299Abstract: A device for producing titanium metal comprises (a) a first heating unit that heats and gasifies magnesium and a first channel that feeds the gaseous magnesium, (b) a second heating unit that heats and gasifies titanium tetrachloride so as to have a temperature of at least 1600° C. and a second channel that feeds the gaseous titanium tetrachloride, (c) a venturi section at which the second channel communicates with an entrance channel, the first channel merges into a throat and as a result the magnesium and the titanium tetrachloride combine in the throat and a mixed gas is formed in the exit channel, and in which the temperature of the throat and the exit channel is regulated to be at least 1600° C., (d) a titanium metal deposition unit that communicates with the exit channel and has a substrate for deposition with a temperature in the range of 715-1500° C., and (e) a mixed gas discharge channel that communicates with the titanium metal deposition unit.Type: GrantFiled: November 17, 2011Date of Patent: October 20, 2015Assignees: HITACHI METALS, LTD., TEKNA PLASMA SYSTEMS INC.Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Tatsuya Shoji
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Publication number: 20140356078Abstract: A powder flow monitor includes a powder transport tube, a sensor of a flow of powder in the powder transport tube, and an oscillator configured to impart a cleaning vibration to the powder transport tube. A method is for in-flight monitoring of a flow of powder using the powder flow monitor.Type: ApplicationFiled: May 29, 2014Publication date: December 4, 2014Applicant: TEKNA PLASMA SYSTEMS INC.Inventors: Radoslaw STANOWSKI, Maher BOULOS
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Patent number: 8871303Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.Type: GrantFiled: May 28, 2010Date of Patent: October 28, 2014Assignees: Hitachi Metals, Ltd., Tekna Plasma Systems Inc.Inventors: Gang Han, Shujiroh Uesaka, Tatsuya Shoji, Mariko Fukumaru (nee ABE), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
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Publication number: 20140310870Abstract: A mobile hospital bassinet includes a lower platform having a plurality of wheels and an upper platform. A plurality of vertically-operable legs connects the upper platform to the lower platform. A control is in operable communication with the plurality of vertically-operable legs, wherein the control is configured to dispose the vertically-operable platform in a position relative to the lower platform. An infant basket is coupled with the upper platform, wherein a tilting mechanism is coupled to the upper platform and the infant basket to dispose the infant basket between a plurality of angles relative to the upper platform. A plurality of compartments of the infant basket is defined by an interior surface of the infant basket. A cabinet assembly coupled to an underside of the upper platform.Type: ApplicationFiled: April 18, 2014Publication date: October 23, 2014Applicant: Tekna, Inc.Inventors: Matthew Gregory Czach, Bryce Kelly Porter
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Patent number: 8859931Abstract: A process and apparatus for preparing a nanopowder are presented. The process comprises feeding a reactant material into a plasma reactor in which is generated a plasma flow having a temperature sufficiently high to vaporize the material; transporting the vapor with the plasma flow into a quenching zone; injecting a preheated quench gas into the plasma flow in the quenching zone to form a renewable gaseous condensation front; and forming a nanopowder at the interface between the renewable controlled temperature gaseous condensation front and the plasma flow.Type: GrantFiled: March 8, 2007Date of Patent: October 14, 2014Assignee: Tekna Plasma Systems Inc.Inventors: Maher I. Boulos, Jerzy Jurewicz, Jiayin Guo, Xiaobao Fan, Nicolas Dignard
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Publication number: 20130255443Abstract: A titanium metal production apparatus is provided with (a) a first flow channel that supplies magnesium in a state of gas, (b) a second flow channel that supplies titanium tetrachloride in a state of gas, (c) a gas mixing section in which the magnesium and titanium tetrachloride in a state of gas are mixed and the temperature is controlled to be 1600° C. or more, (d) a titanium metal deposition section in which particles for deposition are arranged so as to be movable, the temperature is in the range of 715 to 1500° C., and the absolute pressure is 50 kPa to 500 kPa, and (e) a mixed gas discharge section which is in communication with the titanium metal deposition section.Type: ApplicationFiled: November 16, 2011Publication date: October 3, 2013Applicants: TEKNA PLASMA SYSTEMS INC., HITACHI METALS, LTD.Inventors: Gang Han, Tatsuya Shoji, Shujiroh Uesaka, Mariko Fukumaru, Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
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Publication number: 20130255445Abstract: A device for producing titanium metal comprises (a) a first heating unit that heats and gasifies magnesium and a first channel that feeds the gaseous magnesium, (b) a second heating unit that heats and gasifies titanium tetrachloride so as to have a temperature of at least 1600° C. and a second channel that feeds the gaseous titanium tetrachloride, (c) a venturi section at which the second channel communicates with an entrance channel, the first channel merges into a throat and as a result the magnesium and the titanium tetrachloride combine in the throat and a mixed gas is formed in the exit channel, and in which the temperature of the throat and the exit channel is regulated to be at least 1600° C., (d) a titanium metal deposition unit that communicates with the exit channel and has a substrate for deposition with a temperature in the range of 715-1500° C., and (e) a mixed gas discharge channel that communicates with the titanium metal deposition unit.Type: ApplicationFiled: November 17, 2011Publication date: October 3, 2013Applicants: TEKNA PLASMA SYSTEMS INC., HITACHI METALS, LTD.Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Tatsuya Shoji
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Publication number: 20130095243Abstract: A metal titanium production device comprising: (a) a magnesium evaporation unit in which solid magnesium is evaporated and a first flow path which is communicated with the evaporation unit and through which gaseous magnesium is supplied; (b) a second flow path through which gaseous titanium tetrachloride is supplied; (c) a gas mixing unit which is communicated with the first flow path and the second flow path and in which the gaseous magnesium is mixed with titanium tetrachloride, the absolute pressure is adjusted to 50 to 500 kPa and the temperature is adjusted to 1600° C. or higher; (d) a metal titanium precipitation unit which is communicated with the gas mixing unit and in which a precipitation substrate having at least partially a temperature of 715 to 1500° C. is placed and the absolute pressure is adjusted to 50 to 500 kPa; and (e) a mixed gas discharge unit which is communicated with the metal titanium precipitation unit.Type: ApplicationFiled: March 7, 2011Publication date: April 18, 2013Applicants: TEKNA PLASMA SYSTEMS INC., HITACHI METALS, LTD.Inventors: Gang Han, Tatsuya Shoji, Shujiroh Uesaka, Mariko Fukumaru (Abe), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
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Patent number: 8263178Abstract: A process for the in-flight surface treatment of powders using a Dielectric Barrier Discharge Torch operating at atmospheric pressures or soft vacuum conditions is described herein. The process comprising feeding a powder material into the Dielectric Barrier Discharge Torch yielding powder particles exhibiting a reduced powder agglomeration feature; in-flight modifying the surface properties of the particles; and collecting coated powder particles. An apparatus for surface treating micro- and nanoparticles comprising a Dielectric Barrier Discharge Torch operating at atmospheric pressure or soft vacuum conditions is also described herein.Type: GrantFiled: July 31, 2007Date of Patent: September 11, 2012Assignee: Tekna Plasma Systems Inc.Inventors: Maher I. Boulos, Ulrich Kogelschatz, Christine Nessim
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Publication number: 20120201266Abstract: A process and apparatus for producing nanopowders and materials processing is described herein. A plasma reactor comprising a torch body comprising a plasma torch for generating a plasma; a reactor section in fluid communication with the torch body for receiving a plasma discharge and further being in fluid communication with a quench section; and at least one heating element in thermal communication with the reactor section and wherein the at least one heating element provides for selectively modulating the temperature within the reactor section is described herein.Type: ApplicationFiled: March 24, 2010Publication date: August 9, 2012Applicant: TEKNA PLASMA SYSTEMS INC.Inventors: Maher I. Boulos, Jerzy Jurewicz, Jiayin Guo
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Publication number: 20120070578Abstract: Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.Type: ApplicationFiled: May 28, 2010Publication date: March 22, 2012Applicants: TEKNA PLASMA SYSTEMS, INC., HITACHI METALS, LTD.Inventors: Gang Han, Shujiroh Uesaka, Tatsuya Shoji, Mariko Fukumaru (nee ABE), Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz
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Patent number: 8092570Abstract: A process and apparatus for producing titanium metal is described herein. The process comprises generating an RF thermal plasma discharge using a plasma torch provided with an RF coil; reducing titanium tetrachloride to a titanium metal by supplying titanium tetrachloride and magnesium into the RF thermal plasma discharge; and collecting or depositing the titanium metal at a temperature not lower than the boiling point of magnesium chloride and not higher than the boiling point of the titanium metal.Type: GrantFiled: March 30, 2009Date of Patent: January 10, 2012Assignees: Hitachi Metals, Ltd., Tekna Plasma Systems Inc.Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Hiroshi Takashima
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Publication number: 20110277590Abstract: A process for synthesizing metal nanopowders by introducing metal carbonyl into an induction plasma torch. By taking advantage of the much lower dissolution temperature of carbonyl as opposed to the high melting temperature of conventional metal powder feeds less torch power is required. Moreover, in contrast to current powder production techniques utilizing electrode based plasma torches, the induction plasma torch does not introduce contaminants into the nanopowder.Type: ApplicationFiled: May 20, 2011Publication date: November 17, 2011Applicant: TEKNA PLASMA SYSTEMS INC.Inventors: Vladimir Paserin, Richard S. Adams, Maher I. Boulos, Jerzy Jurewicz, Jiayin Guo
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Patent number: 8013269Abstract: A process and apparatus for synthesizing a nanopowder is presented. In particular, a process for the synthesis of nanopowders of various materials such as metals, alloys, ceramics and composites by induction plasma technology, using organometallic compounds, chlorides, bromides, fluorides, iodides, nitrites, nitrates, oxalates and carbonates as precursors is disclosed. The process comprises feeding a reactant material into a plasma torch in which is generated a plasma flow having a temperature sufficiently high to yield a superheated vapor of the material; transporting said vapor by means of the plasma flow into a quenching zone; injecting a cold quench gas into the plasma flow in the quenching zone to form a renewable gaseous cold front; and forming a nanopowder at the interface between the renewable gaseous cold front and the plasma flow.Type: GrantFiled: January 27, 2006Date of Patent: September 6, 2011Assignee: Tekna Plasma Systems Inc.Inventors: Maher I. Boulos, Jerzy Jurewicz, Jiayin Guo
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Method producing metal nanopowders by decompositon of metal carbonyl using an induction plasma torch
Patent number: 7967891Abstract: A process for synthesizing metal nanopowders by introducing metal carbonyl into an induction plasma torch. By taking advantage of the much lower dissolution temperature of carbonyl as opposed to the high melting temperature of conventional metal powder feeds less torch power is required. Moreover, in contrast to current powder production techniques utilizing electrode based plasma torches, the induction plasma torch does not introduce contaminants into the nanopowder.Type: GrantFiled: June 1, 2006Date of Patent: June 28, 2011Assignees: Inco Limited, Tekna Plasma Systems, Inc.Inventors: Vladimir Paserin, Richard S. Adams, Maher I. Boulos, Jerzy Jurewicz, Jiayin Guo -
Patent number: 7964247Abstract: A process for the manufacture of sputtering target comprises the steps of i) providing a substrate; ii) plasma melting of a material selected to form the sputtering target, yielding droplets of molten material; and iii) deposition of the droplets onto the substrate, yielding a sputtering target comprised of the coated layer of the material on the substrate. In some application, it might be preferable that the substrate be a temporary substrate and iv) to join the coated temporary target via its coated layer to a permanent target backing material; and v) to remove the temporary substrate, yielding a sputtering target comprised of the coated layer of the material on the permanent target backing material. The plasma deposition step is carried out at atmospheric pressure or under soft vacuum conditions using, for example, d.c. plasma spraying, d.c. transferred arc deposition or induction plasma spraying. The process is simple and does not require subsequent operation on the resulting target.Type: GrantFiled: February 23, 2004Date of Patent: June 21, 2011Assignee: Tekna Plasma Systems, Inc.Inventors: Maher I. Boulos, Jerzy W. Jurewicz
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Patent number: 7910048Abstract: The process for the synthesis of rhenium powders comprises the injection of ammonium perrhenate powder through a carrier gas in a plasma torch of a plasma reactor operated using a mixture including hydrogen as the plasma gas, yielding metallic rhenium under the following chemical reaction: 2NH4ReO4+4H2?2Re+N2?+8H2O?. The reactor is provided with a quench zone for cooling the metallic rhenium so as to yield rhenium nano and micro powders.Type: GrantFiled: January 6, 2009Date of Patent: March 22, 2011Assignee: Tekna Plasma Systems Inc.Inventors: Jerzy W. Jurewicz, Jiayin Guo
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Publication number: 20090260481Abstract: A process and apparatus for producing titanium metal is described herein. The process comprises generating an RF thermal plasma discharge using a plasma torch provided with an RF coil; reducing titanium tetrachloride to a titanium metal by supplying titanium tetrachloride and magnesium into the RF thermal plasma discharge; and collecting or depositing the titanium metal at a temperature not lower than the boiling point of magnesium chloride and not higher than the boiling point of the titanium metal.Type: ApplicationFiled: March 30, 2009Publication date: October 22, 2009Applicants: Hitashi Metals, Ltd., Tekna Plasma Systems Inc.Inventors: Maher I. Boulos, Jiayin Guo, Jerzy Jurewicz, Gang Han, Shujiroh Uesaka, Hiroshi Takashima