Abstract: The invention relates to a vacuum processing system for processing a substrate (2), with an enclosure (1) for carrying the substrate (2) to be treated in a substrate plane (4), whereby the enclosure (1) comprises a first reflecting means (6) and a heating means (5) having a first plane surface (10) and an opposed second plane surface (11), the heating means (5) is configured for irradiating heating energy only via the first surface (10) and/or via the second surface (11), the first reflecting means (6) is configured for reflecting the heating energy irradiated by the heating means (5) onto the substrate plane (4), and the heating means (5) is arranged such that the first surface (10) faces towards the first reflecting means (6) and the second surface (11) faces towards the substrate plane (4).

Abstract: A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C.

Abstract: This application relates to systems and methods for multi-junction solar cells that includes at least one recrystallized silicon layer. The recrystallized silicon lay may have a microcrystalline structure following a heat treatment or laser treatment of an amorphous silicon layer. The multi-junction solar cell may be a p-i-n or n-i-p structure that may include a p-type doped silicon layer, an intrinsic silicon layer, and an n-doped silicon layer. In one embodiment, the intrinsic layer in either type of structure may be the recrystallized silicon layer.

Abstract: This application relates to systems and methods for improving solar cell efficiently by enabling more light to be captured by the absorber layer. The reflector layer in a solar cell may be designed to reflect light back into the absorber layer that has already passed through the absorber layer. The reflector layer may include a surface protrusion that has a surface that has an angle of approximately 45 degrees. Incident light is reflected from that surface towards the absorber layer or towards the reflector layer which, in turn, reflects the light back towards the absorber layer or the silicon stack. The light may be reflected at an angle that enables the light to have total internal reflection within the silicon layer (e.g., absorber layer, ?c-Si layer, and a-Si layer).

Abstract: A transparent conductive oxide (TCO) layer formed using a post-TCO layer deposition process to increase roughness, aspect ratio and/or peak-to-valley heights of the surface topography relative to as-grown surface topography, and systems, apparatuses and methods thereof. A TCO layer is provided or formed with an as-grown surface topography, and processes are performed to the as-grown surface topography to modify the surface topography to increase roughness, aspect ratio, and/or peak-to-valley heights. The increase in roughness, aspect ratio, and/or peak-to-valley heights of surface topography is performed by at least one of increasing the heights of the peaks and increasing the depths of the valleys. The increase in roughness, aspect ratio, and/or peak-to-valley heights of surface topography can be to a desired or predetermined roughness and/or aspect ratio or an amount of increase in aspect ratio.

Abstract: A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.

Abstract: A method of measuring a current-voltage (IV) characteristic for a photovoltaic (PV) device is described. The method includes providing a PV module for measuring an IV characteristic; exposing the PV module to a solar electromagnetic (EM) spectrum; and acquiring an IV data point on the IV characteristic. The acquisition of an IV data point includes measuring plural IV segments by repetitively applying and sweeping a voltage across the PV module from a unique initial voltage to a target voltage within a time scale for exposing said PV module to the solar EM spectrum, and interpreting a measured current at the target voltage as the IV data point on the IV characteristic if the plural IV segments converge at the target voltage.

Abstract: The present invention provides an improved thin film solar cell, wherein at least one additional resistive transparent conductive oxide (TCO) layer is incorporated into the solar cell. The additional resistive TCO electrically separates the conductive TCO layers acting as electrodes of such a cell and thus decreases or prevents performance losses. Furthermore, methods for the production of such solar cells are disclosed.

Abstract: The invention relates to a mounting interface configured for a photovoltaic module (1) comprising a backside (2) having an overall backside surface size (4, 5), the mounting interface comprising at least six mounting elements (3) attachable to the backside (2) of the photovoltaic module (1) for mounting the photovoltaic module (1) on a mounting surface, wherein each mounting element (3) comprises a mounting element surface having an overall mounting element surface size (6, 7) such that the contact area between the photovoltaic module (1) and the mounting element (3), when attached to the photovoltaic module (1), equals the overall mounting element surface size (6, 7), and the overall backside surface size (4, 5) of the photovoltaic module (1) divided by the summarized overall mounting element surface size (6, 7) of all mounting elements (3) is ?40 and ?160, preferably ?50 and ?80, more preferably 52.

Abstract: There is provided a method of coating a substrate with a zinc oxide film. The method includes (a) providing a substrate with at least one substantially flat surface, (b) subjecting the surface at least partially to a plasma-etching process, and (c) depositing on the etched surface, a layer that includes zinc oxide. The method is particularly suitable for manufacturing solar cells.

Abstract: A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a ?c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

Abstract: An ablation method including a steps of ablating a region of a substrate (1) by a laser beam (3); and removing debris ablated from the region (1) by a flow of a fluid (7), namely, a gas or vapor, a liquid or a combination of the fluids. The flow of fluid (7) is directed to flow over the region so as to entrap debris and thereafter remove the entrapped debris from the region by directing the flow of fluid, with any entrapped debris, away from region along a predetermined path (6) avoiding subsequent deposition of entrapped debris on the substrate.

Abstract: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).

Abstract: The present invention relates to a device for the treatment of a workpiece, in particular of a substantially flat substrate, comprising a table (2) for supporting the workpiece (5), a flow generation apparatus (6, 11) producing a gas flow (22) on a top face (17.1, 17.2) of the table (2) in a region between the workpiece (5) and the top face (17.1, 17.2) of the table (2), on which gas flow the workpiece (5) is supported during the treatment.

Abstract: A device for accurately positioning laser scribed lines in a thin top layer of material with respect to lines already scribed in lower layers for the purpose of making solar panels. An alignment detector system is attached to and displaced from an optics unit that generates laser beams by a distance such that the detector measures the position of scribed lines in the lower layers in the area of the panel that will be scribed at a subsequent time. A motion and control system moves the panel such that the detector follows the path of one or more of the lines scribed in one of the lower layers and measures the position of the lines. The system accepts data from the alignment detector and uses the data to correct the relative position of the optics unit.

Abstract: The present invention provides a method for removing metal and/or metal oxide contamination from the interior of a vacuum coating reactor, the method comprising the steps of: a) performing an idle coating step by depositing a coating layer, wherein the coating layer comprises silicon; b) at least partly removing the deposited coating layer. The method according to the invention is particularly suitable for cleaning reactors in the context of solar cell manufacturing. The method is time saving and cost saving.

Abstract: A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer.

Abstract: The invention discloses a contacting device for a thin film solar cell, comprising a positioning plane for positioning the solar cell thereon, a contact element for electrically contacting the solar cell and a suction element, wherein the solar cell is arrangeable on the top side of the positioning plane, the contact element is arranged slideably in a direction orthogonal to the positioning plane and arranged slideably through an opening of the positioning plane, and the suction element is arranged on the bottom side of the positioning plane for sucking air through the opening. The contacting device allows for obtaining improved measurement accuracy.

Abstract: So as to manufacture an intrinsic absorber layer of amorphous hydrogenated silicon within a p-i-n configuration a solar cell by PeCvD deposition upon a base structure, thereby improving throughput an simultaneously maintaining quality of the absorber layer, a specific processing regime is proposed, wherein in the reactor for depositing the addressed absorber layer a pressure of between 1 mbar and 1.8 mbar is established and a flow of silane and of hydrogen with a dilution of silane to hydrogen of 1:4 up to 1:10 and generating an RF plasma with a generator power of between 600 W and 1200 W per 1.4 m2 base structure surface to be coated.

Abstract: A positioning device of the type described characterised by the incorporation of the puck into a closed circuit gas system from which the puck establishes the flow of fluid to provide the fluid cushion. Typically the positioning device is characterised by the provision of a heat transfer mechanism incorporated in the closed circuit to provide for heat exchange between the heat transfer mechanism and gas flowing around the system. The puck is coupled to a lens and a mask to provide for close following of a surface of a work-piece so as to keep a magnified image of the mask stable; the combination of puck, lens and mask forming a unit counterbalanced by a counterweight acting to provide for adjustment of focus of the laser beam relative to the surface of the work-piece.