Abstract: The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus including a gas supply, which uniformly supplies a process gas and is easily installed and maintained.

Abstract: A substrate processing method, involving etching a silicon nitride layer selectively in a substrate where a silicon oxide layer and the silicon nitride layer are stacked, includes: wet-etching the silicon nitride layer with a phosphoric acid-based etching solution; and dry-etching a regrowth oxide, which is formed on a surface of the silicon oxide layer in the wet etching step, with an etching gas.

Abstract: The present disclosure relates to a showerhead assembly and a substrate processing apparatus, and more particularly to a showerhead assembly and a substrate processing apparatus including a ceramic heater that heats a substrate and by which hole processing is freely performed in a relatively high temperature process.

Abstract: The present disclosure relates to a showerhead assembly and a substrate processing apparatus, and more particularly to a showerhead assembly and a substrate processing apparatus including a ceramic heater that heats a substrate and by which hole processing is freely performed in a relatively high temperature process.

Abstract: The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to, a substrate processing apparatus and a substrate processing method capable of performing deposition on both upper and lower surfaces of a substrate in a single apparatus or a single facility when performing deposition on the lower surface of the substrate to alleviate or eliminate a bowing phenomenon of the substrate.

Abstract: The present invention relates to a substrate support unit and a temperature control method of the substrate support unit, and more specifically, to a substrate support unit and a temperature control method of the substrate support unit, which can accurately measure and adjust the temperature of each zone when the substrate support unit that supports and heats a substrate is divided into a plurality of zones.

Abstract: A method of manufacturing a display apparatus includes forming a semiconductor layer on a substrate, forming an insulating layer on the semiconductor layer, forming a photoresist pattern on the insulating layer, forming, by etching the insulating layer, a contact hole exposing at least a portion of the semiconductor layer, and performing a primary cleaning of the insulating layer in which the contact hole is formed using a cleaning gas including a fluorine-containing gas and a hydrogencontaining gas.

Abstract: There is provided a method of protecting an apparatus from an etching material. The method includes: (a) forming a protective layer on an exposed surface of an apparatus; (b) forming a seasoning layer on the protective layer; (c) performing a deposition process on a wafer that is inserted into the apparatus in which the protective layer and the seasoning layer are formed; (d) removing a deposition film on the seasoning layer of the apparatus in the deposition process and the seasoning layer, with a first etching material; and (e) removing the protective layer, with a second etching material.

Abstract: There is provided a method of processing a substrate that protects the photoresist pattern during the subsequent ion implanting process as well as improve the conformal properties. The method of processing the substrate includes steps of disposing a substrate in a reaction chamber, the substrate on which a photoresist pattern is formed; and forming a CD control film including a nitrogen-doped amorphous carbon on the substrate on which the photoresist pattern is formed, and the step of forming the CD control film may be performed at a temperature of 100° C. or less by a PECVD process.

Abstract: The present invention relates to a hybrid chamber, and more specifically, to a hybrid chamber capable of performing both a gas phase etching (GPE) process for removing oxide from a substrate and a radical dry cleaning (RDC) process for removing nitride from the substrate in one chamber.

Abstract: There are provided a mask processing method and a mask processing apparatus for reusing a mask used in an organic material deposition process. The mask processing method includes: (a) forming a sacrificial layer on a mask in a first chamber; (b) transferring the mask to a second chamber in which a substrate is disposed, and then processing the substrate using the mask; and (c) removing the sacrificial layer on the mask.

Abstract: There is provided a substrate support device. The substrate support device includes a substrate support part on which a wafer is deposited, the substrate support part including a first mesh electrode and a second mesh electrode disposed under the first mesh electrode; a chucking circuit configured to apply a DC voltage to the first mesh electrode; and an edge control circuit configured to control timings of operations related to the first mesh electrode and the second mesh electrode and control RF (Radio Frequency). The second mesh electrode is divided into a plurality of second sub-mesh electrode to remove an induced electromotive force generated due to a closed loop.

Abstract: The present invention relates to an integrated gas system for a substrate processing apparatus, the system including: a plurality of base blocks connected sequentially to one another to extend a gas supply flow passage passing through the interiors thereof to flow gas therealong, the gas supply flow passage having a gas inlet connected to one side surface of the first base block and a gas outlet connected to one side surface of the last base block; and a flow rate control unit disposed on the base blocks along the gas supply flow passage and having at least one of valves and a flow rate controller, wherein each base block has a first heater groove formed close to the gas supply flow passage on one side surface thereof.

Abstract: There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.

Abstract: A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

Abstract: The present invention relates to a substrate processing method for selectively etching a silicon nitride layer on a substrate on which silicon oxide layers and silicon nitride layers are alternately stacked, the method including plasma etching the silicon nitride layers using plasma of a plurality of gases, wherein the plurality of gases include a first gas containing fluorine excluding nitrogen trifluoride (NF3) and a second gas containing hydrogen, and the etch profile in the thickness direction of the silicon nitride layers is controlled by adjusting the atomic ratio of fluorine to hydrogen included in the plurality of gases.

Abstract: The present invention relates to a substrate bonding apparatus including: a chamber; a first chuck disposed inside the chamber to adhere a first substrate; a second chuck disposed facingly inside the chamber toward the first chuck to adhere a second substrate; and a camera located above or under the first chuck and the second chuck to recognize first alignment key disposed on the first substrate and second alignment key disposed on the second substrate.

Abstract: The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Abstract: The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

Abstract: The present invention relates to a method for selectively etching a silicon oxide film in a semiconductor manufacturing process and comprises: a step of introducing a substrate having a silicon nitride film and a silicon oxide film to a substrate support part inside a reactor; a step of heating the substrate introduced into the reactor, so as to maintain a first temperature; a first step of supplying halogen gas and basic gas to the inside of the reactor, while the first temperature is maintained, so as to be reacted with the silicon oxide film formed on the substrate, thereby forming a reaction product on the substrate; a second step of heating the substrate, having the reaction product, up to a second temperature so as to remove the reaction product; a third step of cooling the temperature of the substrate down to the first temperature; and a step of repetitively performing the first step to the third step a preset number of times.