Abstract: A microminiature tip and tip assembly is fabricated using microelectronic fabrication techniques. A masking aperture is formed in a dielectric layer which overlies a (100) silicon substrate. For a square aperture, a pyramidal pit is anisotropically etched into the surface of the silicon substrate. Tungsten is selectively deposited in the pit to form a pyramid-shaped microminiature point. Continued deposition of tungsten fills the aperture to form a base portion of the tip which integrally locks the tip to the dielectric layer, which is fabricated to form a support member for the tip.
Type:
Grant
Filed:
January 13, 1989
Date of Patent:
April 10, 1990
Assignee:
The Board of Trustees of the Leland Jr. University