Abstract: Disclosed herein is a method and thermoset made by: reacting a di- or tri-functional isocyanate with a silyl-containing compound to form a polyurethane having at least one unreacted isocyanate group, reacting the polyurethane with an aminoalkylalkoxysilane to form an alkoxysilane-terminated polyurethane, and moisture-curing the alkoxysilane-terminated polyurethane to form the thermoset. The silyl-containing compound has the formula: SiR1n[R3—(O—CO—X—R3)m—OH]4-n. Each X is —O— or —NR2—; each R1 is an alkyl group or an aryl group; each R2 is —H, an alkyl group, or an aryl group; each R3 is an alkylene group; n is 0, 1, or 2; and each m is a non-negative integer. The thermoset may be degraded by treatment with a solution of a fluoride salt in an organic solvent.

Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

Abstract: A supported heterogeneous catalyst material for catalyzing the reverse water-gas shift (RWGS) reaction for the selective formation of CO using an alkali metal-doped molybdenum carbide on a gamma alumina support (A-Mo2C/?-Al2O3, A=K, Na, Li). The A-Mo2C/?-Al2O3 catalyst is synthesized by co-impregnation of molybdemun and alkali metal precursors onto a ?-Al2O3 support. It is then carburized to form the A-Mo2C/?-Al2O3.

Abstract: A solid state circuit breaker that may include a metal oxide varistor (MOV) that is connected in series to a thyristor, the MOV to clamp voltage of current flowing through the solid state circuit breaker; the thyristor including a gate to control flow of the current to the MOV along a first path to the MOV; a breakover diode to activate at a target voltage level to allow the current to flow to the MOV along a second path; and a Zener diode to close the gate and allow current to flow along the first path in response to the current on the second path.

Abstract: The present invention provides for a release system for delaying application of chemical reagents in a lateral-flow immunoassay. A chemistry release fiber comprising a permeable membrane and a chemical release agent is used to delay chemical reagent delivery to the indicator of a lateral-flow immunoassay. Also disclosed is the related method of delaying application of chemical reagents in a lateral-flow immunoassay.

Abstract: A nanoparticle (NP)-peptide conjugate provides efficient steric hindrance/blockage of cellular membrane potassium (K+) channels to mediate depolarization of cellular membrane potential.

Abstract: A microcapacitor array for providing artificial muscles is described. The microcapacitor array includes a dielectric body with electrode chambers, positive electrodes in positive electrode chambers, the positive electrodes being connected by a first set of channels in the dielectric frame; negative electrodes in negative electrode chambers, the negative electrodes being connected by a second set of channels in the dielectric frame. The first and second set of channels are arranged so that application of a voltage differential between the positive electrodes and the negative electrodes generates an attractive force between each set of adjacent positive and negative electrodes.

Abstract: Methods, and systems, for Multiagent Pathfinding for Non Dynamic Programming Problems, including a CE method which provides for sampling from a complex probability distribution that is not necessarily known in a closed form. The applications of this method include rare-event simulation, variance reduction for estimation problems, and stochastic optimization. The method iteratively searches for a probability distribution that is “close” to the intended distribution, where the closeness of distributions is measured using the Kullback-Liebler (KL) divergence between the distributions. At each step, the method generates samples according to a current candidate distribution from the family. Next, it uses those current candidate distribution samples to move the distribution toward a new candidate distribution that is closer in the sense of KL divergence to the target distribution.

Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.

Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.

Abstract: An optoelectronic device comprising at least one quantum well (QW) and at least one quantum dot (QD) incorporated in the quantum well with the band gap of the quantum well being larger than the band gap of the quantum dot. The QDs and QD arrays are embedded in various QW, thus providing higher yields in optoelectronic devices, such as light emitting diodes, lasers, and photodetectors. This is achieved by a nearly complete suppression of the nonradiative Auger recombination and enhancement of the light extraction efficiency.

Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

Abstract: Disclosed is a method of irradiating a composition having water and hydrogen-terminated nanodiamonds with light that generates water-solvated electrons from the nanodiamonds. The method can be used to degrade fluoroalkyl compounds such as perfluorooctane sulfonate.

Abstract: A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 ?m) feature sizes is eliminated.

Abstract: Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

Abstract: A method of restoring an elastomer by providing an article containing a first elastomer and having a surface, contacting the surface with a layer conformal to the surface, and applying heat and pressure to the layer. The layer contains a second elastomer and a solute. The heat and pressure induce a transfer of the solute from the layer to the article.

Abstract: Method for forming an integrated acoustic device. A thin film piezoelectric acoustic transducer is epitaxially formed on a host substrate and is then transferred to a functional target substrate wherein physical phenomena from the piezoelectric transducer and the arbitrary functional substrate interact to form a hybrid acoustic microsystem comprising the piezoelectric transducer and the arbitrary functional substrate.

Abstract: Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

Abstract: Disclosed are compositions containing nanoparticles of a metal nitride, boride, silicide, or carbide, a filler material, and a carbonaceous matrix. The precursor to this material contains nanoparticles or particles of boron, silicon, iron, a refractory metal, or a refractory metal hydride, an organic compound having carbon and hydrogen, and a filler material. Multilayered materials are also disclosed.

Abstract: An antenna apparatus includes an aperture antenna. The antenna apparatus also includes a compact polarimetric monopulse waveguide antenna feed configured to communicate with the aperture antenna. Optionally, the compact polarimetric monopulse waveguide antenna feed includes a monopulse antenna feed configured to communicate with the aperture antenna. The compact polarimetric monopulse waveguide antenna feed also includes a compact polarimetric monopulse feed network configured to communicate with the monopulse antenna feed.