Abstract: A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optical devices including such a thin film structure.
Type:
Grant
Filed:
August 28, 1998
Date of Patent:
April 4, 2000
Assignee:
The Regents of the Universitiy of California