Abstract: A parallel magnetic resonance imaging (MRI) apparatus configurable to image a physical entity comprises: a main magnetic flux source for providing a uniform fixed magnetic field, B0; an RF array system comprising a plurality of RF coils and receivers, said RF system configured for: generating rotating RF excitation magnetic fields B1; and receiving RF signals due to precessing nuclear magnetization on multiple spatially distinct radio frequency coils and associated receiver channels, said RF system being configured to operate in accordance with a B1 sensitivity encoding technique; a control processor for controlling imaging functionality, collecting image data and effecting data processing of the captured image data the control processor being configured with post processing capability for the B1 sensitivity encoding technique; an image display means for displaying processed image data as resultant images; and an auxiliary magnetic field means capable of producing at least one auxiliary uniform B0 step mag

Abstract: A compound of formula (Ia) of (Ib), wherein A and B each independently represents hydrogen or one, two or three naphthylidene substituents, which substituents are selected from C.sub.1-6 alkyl, C.sub.1-6 alkoxy, aryl, aryloxy, silyl and silyloxy; R.sup.1 represents phenyl, C.sub.1-6 alkyl, phenyl C.sub.1-6 alkyl or a moiety of formula (a): wherein R.sup.2 represents C.sub.1-6 alkyl, phenyl or benzyl, R.sup.3 represents H or OR.sup.4 wherein R.sup.4 is C.sub.1-6 alkyl or C.sub.1-6 alkylsilyl and n is zero or an integer 1 or 2; and X.sup.- is a counter ion; a process for the preparation of such compounds and the use of such compounds for enantioselectively epoxidising a prochiral olefin.

Abstract: A magnetic field responsive device which includes: an electrically insulating substrate (2), a layer of an electrically conductive soft magnetic material (3), a layer of giant magneto-resitive (GMR) material (5) arranged in electrical contact with ethe layer of electrically conductive soft magnetic material, the thickness of the GMR material layer being not greater than twice the mean free path of an electron in the said GMR material, the layers being arranged in any order or position on the substrate and having opposed directions of mangetisation in zero magnectic field.