Abstract: The invention pertains mainly to a method and a device for the display of targets and/or target positions using the data acquisition means of a weapons system.The device of the present invention can be used to display the target or the direction of the target acquired by missile homing heads. This data comes as a complement, and other data on the position of the target is used to ascertain that the homing head is properly locked on as well as to supplement any lack of information caused, for example, by a breakdown in the display systems. The invention can be applied mainly to the building of anti-aircraft defense launching platform or anti-aircraft and anti-tank launching platform.

Abstract: The invention pertains to a charge transfer shift register provided with a device for voltage sensing using a floating-potential diode. Towards that end of the register which is located on the floating-potential diode side, the width of the charge transfer channel diminishes gradually and symmetrically with respect to the longitudinal axis of the register, and the electrodes have a shape which is all the more similar to that of a ring sector as they are close to the floating-potential diode. Thus, the path followed by the charges which leave it up to the floating electrode are made substantially uniform for each of these electrodes, whether the charges leave the electrode near the edges of the channel or near the longitudinal axis of the register.

Abstract: An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.