Abstract: The invention relates to a sensor for a terahertz imaging system, comprising an array of terahertz radiation receivers; and an array of terahertz radiation transmitters having the same pitch as the array of receivers, located between the array of receivers and an analysis zone located in the near field of the transmitters, and configured such that each transmitter emits a wave towards both the analysis zone and a respective receiver of the array of receivers.

Abstract: The invention relates to a sensor for a terahertz imaging system which can be integrally produced using a semiconductor technology, comprising a flat substrate (60) made from semiconductor material that is transparent to terahertz radiation, configured to be oriented parallel to an object (12) to be analyzed; and a plurality of terahertz radiation receivers arranged according to a matrix (10) in the substrate. The sensor is lensless and comprises at least one terahertz radiation transmitter arranged in the substrate, so that the radiation emitted by the transmitter is reflected on the object (12) to be analyzed, towards the receivers.