Abstract: A probing device for inspecting semiconductor devices such as IC chips includes a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide thin film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film.

Abstract: While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.

Abstract: A circulation duct with a blow fan and a shutter is provided to form gas flows in a transfer chamber below a heat treatment furnace, and a dust removing filter unit is provided in a blowout port of the circulation gas passage. Three, for example, gas supply pipes with a number of blowout holes are provided on the front side of the filter unit at set heights, and a clean air source is connected to the proximal end of the air supply pipes through an opening/closing valve. Clean gas is fed into the transfer chamber from the clean air source from the start of an unloading of the wafers to the time of the dismounting of the wafers from a wafer boat with the circulation of gas flows in the circulation gas passage stopped. A filter material of the dust removing filter is PTFE, which can reduce the amount of impurities scattered from the dust removing filter that attach on the wafers.

Abstract: A probe device for testing a wafer divided into IC chips has a vessel that accommodates a wafer mounting stand and a flexible probe card having contactor bumps. The vessel is configured in a separatable manner of a grounded aluminum cover portion to which the probe card is integrally fixed and a base portion fixed to the wafer mounting stand. The interior of the vessel is sealed with the wafer and the probe card facing each other therein. A space above the probe card forms a damper chamber into which a fluid is introduced in such a manner that the pressure thereof presses the bumps on the probe card against the wafer. Bumps in a peripheral edge portion of the probe card are placed into contact with electrodes in a peripheral edge portion of the vessel, and thence to a test head. The above configuration can prevent the effects of external electrical noise and thus enable stable electrical measurements unaffected by changes in ambient temperature.

Abstract: In order to prevent any possible electrical discharge between a lower electrode and a grounded member through a backside gas supply conduit when performing a plasma treatment with a supply of a backside gas such as He gas to the backside of a semiconductor wafer being held by an electromagnetic chuck on the lower electrode for the generation of a plasma within a plasma treatment chamber, the gas supply conduit is fitted therein with cylindrical flowpath members made of two types of electrically insulating materials each having a multiplicity of axially extending small-diameter conduction holes, at a position within an electrically insulating body disposed between the lower electrode and a grounded member. The small diameter conduction holes in the backside gas flowpath serve to increase an electrical discharge start voltage for the prevention of electrical discharge. The formation of the multiplicity of conduction holes provides a large conductance.

Abstract: A heat-treating apparatus for heat treating a plurality of objects-to-be-treated (semiconductor wafers) by loading the objects-to-be-treated into a heat treatment vessel having the lower end opened, mounted on a heat-treatment boat vertically spaced from each other, and sealing the opened end includes a heat insulator disposed on the lower end portion of the heat-treatment boat for heat-insulating the interior of the reaction vessel. The heat-insulator includes heat transmission preventing plates of opaque quartz for preventing the transmission of heat rays from a heater, and a support for supporting the heat transmission preventing plates. Thus sufficient heat-insulating effect for a heat-treating operation can be achieved, and stable heat-treatment can be conducted without impairing the function of sealing the heat-insulating unit. Furthermore, particle formation can be prevented, with a result of improved yields of the heat-treatment.

Abstract: A waiting space is provided below a processing vessel for processing objects to be processed. An objects to be processed mount which is movable up and down into the processing vessel is disposed in the waiting space for mounting objects to be processed. There is provided a natural oxide film generation suppressing gas supply system which supplies a natural oxide film generation suppressing gas for suppressing generation of natural oxide films on the surfaces of the objects to be processed, and a dried gas with a low dew point is supplied as a natural oxide film generation suppressing gas by the natural oxide film generation suppressing gas supply system. The processing apparatus can suppress generation of natural oxide films inexpensively and efficiently.

Abstract: Annular groove portions are formed in each of facing surfaces of a sealing portion of a processing vessel that is kept in an atmosphere of a prescribed gas or an atmosphere at a reduced pressure, and a thin annular plate is arranged in such a manner that it is sucked against the entire periphery of the opening portions of the annular groove portions. The annular groove portions are each connected to an exhaust device, and the facing surfaces of the sealing portion are sealed in a gas-tight manner by reducing the pressure in the annular groove portions so that the thin annular plate is sucked against the entire periphery of the openings of the annular groove portions. This configuration prevents the introduction of unwanted oxygen and moisture from the atmosphere into the interior of the processing vessel, and also provides a thermal processing apparatus which has a sealing portion that prevents the emission of gases and moisture at high temperatures.

Abstract: A plasma film forming apparatus comprises gas supply means for feeding a processing gas into a processing chamber, a first electrode opposed to an object of processing in the processing chamber, a second electrode in the form of a flat coil facing the first electrode across the object of processing, pressure regulating means for keeping the pressure in the processing chamber at 0.1 Torr or below, heating means for heating the object of processing to a predetermined temperature, and application means for applying radio-frequency power between the first and second electrodes, whereby the processing gas is converted into a plasma such that a film is formed on the surface of the object of processing through reaction of ions or active seeds in the plasma. When radio-frequency power is applied between the pair of electrodes, a radio-frequency electric field is formed. Since one of the electrodes is the flat coil, however, a magnetic field is formed.

Abstract: The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible.

Abstract: A processing chamber having a heating device for heating the interior thereof to a required temperature, and a holding device with at least three separate holding elements is disclosed. A processing gas feed port and processing gas passages are provided in a cap which is connected to a processing chamber and closes an opening in the upper surface of the processing chamber, and the processing gas feed port and the processing gas passages are connected by a connection pipe. The processing chamber is connected to processing gas sources and has processing gas introduction passages formed in a side wall thereof and communicated with the processing gas passages. Seal members are provided around open ends of either of the processing gas passages or the processing gas introduction passages in the surfaces of the processing chamber and the cap opposed to each other.

Abstract: When an object of treatment is subjected to, for example, a gas treatment in an airtight chamber, reaction products adhere to the inner wall surface of the chamber, an object holder therein, and the corner portions of the chamber. When a cleaning medium is injected into the chamber, according to the present invention, the reaction products are dissolved in the cleaning medium by hydrolysis. Thereafter, the cleaning medium is discharged from the chamber. Then, the chamber is heated and evacuated, so that water vapor is discharged to provide a predetermined degree of vacuum, whereupon the treatment can be started anew. Therefore, a wiping operation can be omitted. Moreover, the reaction products remaining at the corner portions of the chamber can be removed without forming a source of polluted particles, so that the necessity of overhauling can be obviated. Thus, fully automatic cleaning, so to speak, can be effected, and the chamber need not be open to the atmosphere, so that the throughput can be improved.

Abstract: A gap is defined between an inner region of an end face of a first container member of a container and an inner region of an abutting portion of a second container member, the inner regions being situated inside a seal member. The respective inner regions of the end face of the first container member and the abutting portion of the second container member, which are situated inside the seal member, are prevented from coming into contact with each other when the interior of the container is decompressed. Even though the second container member is bent inward by atmospheric pressure when the container is decompressed to a predetermined degree of vacuum, therefore, the abutting portion thereof cannot come into contact with the inner edge of the end face of the first container member.

Abstract: A heat shielding member is provided on an object-to-be-processed holder for loading/unloading an object to be processed to/from a thermal processing position. The heat shielding member can cover a space below the processing position. As a result, leakage of radiation heat from the processing position can be blocked, and an optimum temperature gradient at the processing position can be maintained. Accordingly the entire surface of the object to be processed can be efficiently thermally processed at uniform temperatures, and throughputs in the fabrication steps can be improved.

Abstract: There are provided a treatment chamber for removing natural oxide films formed on the surface and the underside of an object to be treated, e.g., a semiconductor wafer, in treating gas ambient atmosphere, holding member for holding the object to be treated in the treatment chamber, and a mounting member with, e.g., pins erected thereon, and a disk body disposed inside the mounting member. The mounting member and the disk body are rotated relatively to each other. The relative rotation of the mounting member and the disk body generates flows of the treating gas, so that the natural oxide films are homogeneously removed from the entire surface and underside of the object to be treated.

Abstract: Nozzles that blow an air are disposed in a space between an outer wall of a process tube and a heat generating resistor. The openings of the nozzles are oriented to the process tube corresponding to an arrangement area of semiconductor wafers. An air blowing angle and alignment of the openings of the nozzles are designated corresponding to the length of the arrangement area of the semiconductor wafers. Thus, since a portion where natural heat radiation is weak is forcedly cooled, the cooling effect can become equal in the entire region of the process tube, thereby reducing temperature drop time.

Abstract: A thermal processing furnace provided with a helical-shaped heating resistance element along an inner wall surface of a cylindrical insulating member, wherein support members support the heating resistance element that has been divided into a plurality of parts in an axial direction of the insulating member. Each of the support members is formed of a plurality of support pieces that extend in a radially outward direction with respect to the furnace and at a pitch corresponding to that of the heating resistance element, on a base portion positioned on an inner side of the heating resistance element, and tip portions of the support pieces are embedded in the insulating member. Since this enables a simplification of the structure, it is possible to improve the practicability of the process and reduce the fabrication time, with a simple fabrication design, and it is also possible to improve the accuracy of the pitch at which the heating resistance element is arrayed.

Abstract: In order to form a film on a surface of a semiconductor wafer, a multiplicity of wafers are individually mounted on ring-shaped mounts of a wafer boat, while the temperature within a reaction tube is set at, e.g., 400.degree. C. under a nitrogen gas atmosphere. After loading the wafer boat into the reaction tube, the temperature within the reaction tube is raised up to, e.g., 620.degree. C. at a rate of, e.g., 100.degree. C./min, and SiH.sub.4 gas is supplied onto the surface of a silicon substrate to form a polysilicon film. After film formation, air is forced to flow along the internal surface of the heating section to forcibly cool the interior of the reaction tube. In the case of forming a metal silicon film using a wafer having a silicon substrate and a metal film formed on the surface of the silicon substrate, the temperature within the reaction tube is set at, e.g. 100.degree. C. for loading the wafers.

Abstract: A semiconductor wafer plasma treatment apparatus comprising a processing vessel whose interior is maintained at a predetermined degree of vacuum; a plasma generation means which is arranged on an upper surface of the processing vessel and generates radio-frequency waves into the interior thereof, to cause the generation of a plasma in the process gas within the processing vessel; and a holder for holding a semiconductor wafer that is to be subjected to a predetermined treatment by the plasma generated from the process gas by the action of the plasma generation means, a supply means which supplies process gas into the processing vessel comprises first gas supply pipes that are arranged at positions equidistant in the peripheral direction around the processing vessel and a second gas supply pipe that is arranged at the center of an upper surface of the processing vessel, and gas exhaust means from exhaust gases from the processing vessel is arranged at positions equidistant in the peripheral direction around th