Patents Assigned to Tokyo Electron Yamanashi Kabushiki Kaisha
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Patent number: 6072325Abstract: A probe device for testing a wafer divided into IC chips has a vessel that accommodates a wafer mounting stand and a flexible probe card having contactor bumps. The vessel is configured in a separatable manner of a grounded aluminum cover portion to which the probe card is integrally fixed and a base portion fixed to the wafer mounting stand. The interior of the vessel is sealed with the wafer and the probe card facing each other therein. A space above the probe card forms a damper chamber into which a fluid is introduced in such a manner that the pressure thereof presses the bumps on the probe card against the wafer. Bumps in a peripheral edge portion of the probe card are placed into contact with electrodes in a peripheral edge portion of the vessel, and thence to a test head. The above configuration can prevent the effects of external electrical noise and thus enable stable electrical measurements unaffected by changes in ambient temperature.Type: GrantFiled: June 19, 1996Date of Patent: June 6, 2000Assignees: Tokyo Electron Kabushiki Kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventor: Kunio Sano
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Patent number: 5690998Abstract: The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible.Type: GrantFiled: March 29, 1996Date of Patent: November 25, 1997Assignees: Tokyo Electron Kabushiki kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventors: Yasushi Nagasawa, Satoru Yamashita, Masahiko Matsudo
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Patent number: 5559446Abstract: A probing device for inspecting semiconductor devices such as IC chips includes a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide thin film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film.Type: GrantFiled: July 18, 1994Date of Patent: September 24, 1996Assignees: Tokyo Electron Kabushiki Kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventor: Kunio Sano
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Patent number: 5550482Abstract: A probe device for testing a wafer divided into IC chips has a vessel that accommodates a wafer mounting stand and a flexible probe card having contactor bumps. The vessel is configured in a separatable manner of a grounded aluminum cover portion to which the probe card is integrally fixed and a base portion fixed to the wafer mounting stand. The interior of the vessel is sealed with the wafer and the probe card facing each other therein. A space above the probe card forms a damper chamber into which a fluid is introduced in such a manner that the pressure thereof presses the bumps on the probe card against the wafer. Bumps in a peripheral edge portion of the probe card are placed into contact with electrodes in a peripheral edge portion of the vessel, and thence to a test head. The above configuration can prevent the effects of external electrical noise and thus enable stable electrical measurements unaffected by changes in ambient temperature.Type: GrantFiled: July 14, 1994Date of Patent: August 27, 1996Assignees: Tokyo Electron Kabushiki Kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventor: Kunio Sano
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Patent number: 5532613Abstract: The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible.Type: GrantFiled: April 14, 1994Date of Patent: July 2, 1996Assignees: Tokyo Electron Kabushiki Kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventors: Yasushi Nagasawa, Satoru Yamashita, Masahiko Matsudo
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Patent number: D350490Type: GrantFiled: April 7, 1993Date of Patent: September 13, 1994Assignees: Tokyo Electron Kabushiki Kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventor: Itaru Takao
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Patent number: D365584Type: GrantFiled: June 6, 1994Date of Patent: December 26, 1995Assignees: Tokyo Electron Kabushiki Kaisha, Tokyo Electron Yamanashi Kabushiki KaishaInventors: Tatsuya Nakagome, Takashi Tozawa