Abstract: A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

Abstract: A liquid can be delivered with a simple configuration. A liquid delivery method includes allowing a liquid to flow in a tube having elasticity depending on a pressure of a gas filled in an inner space between a tube housing covering an outside of the tube and an outer surface of the tube; obtaining a magnitude of a pressure of the liquid flowing in the tube as a first value; obtaining a magnitude of the pressure of the gas filled in the inner space as a second value; calculating a difference between the first value and the second value as a third value; and detecting a status of the tube on the basis of the third value.

Abstract: A substrate processing apparatus includes a substrate processing device, a substrate accommodation-status detection device, a substrate-transport device including a first substrate-transport sub-device which unloads substrates from a carrier and a second substrate-transport sub-device which unloads the substrates from the carrier, a control device including processing circuitry which controls the first and second substrate-transport sub-devices based on detection result of the substrate accommodation-status detection device.

Abstract: A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.

Abstract: A bypass route is provided in order to transfer a substrate without passing through the atmospheric pressure transfer chamber, that is, a loader module, from a load lock chamber to a storage. In the bypass route, a sub-transfer unit for transferring the processed substrate from the load lock chamber to the storage is provided. The sub-transfer unit transfers the processed substrate from the load lock chamber to the storage, and a main transfer unit of the loader module returns the processed substrate from the storage to a transport container on holding stage.

Abstract: A silicon oxide film forming method includes performing a set one or more times, the set including: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a silicon oxide film formation process in which a silicon oxide film is formed on the workpiece accommodated within the reaction chamber; and an unload process in which the workpiece having the silicon oxide film is unloaded from the reaction chamber. In at least one of the unload process, the standby process and the load process, a gas containing water vapor is supplied into the reaction chamber while an interior of the reaction chamber is heated.

Abstract: The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: A substrate mounting table includes a plurality of passageways independently provided therein, a temperature control medium flowing through the passageways, and a gap formed between at least two of the passageways. In a substrate processing method for processing a substrate mounted on the substrate mounting table in a substrate processing apparatus while controlling a temperature thereof, a process is performed on the substrate while controlling the temperature of the substrate by flowing the temperature control medium through each of the passageways. The passageways are respectively provided in a central area of the substrate mounting table and a peripheral area located outside the central area, and the central area and the peripheral area are thermally isolated from each other by evacuating the gap so as to set the gap to a vacuum state.

Abstract: A prober which tests an object to be tested under temperature control is provided. This prober includes a stage base, Z stage, X-Y stage having a frame structure, substrate fixing mechanism arranged on the X-Y stage, a probe card arranged to oppose the substrate fixing mechanism, and a probing stage fixed on the Z stage and arranged in the frame structure of the X-Y stage such that its axis coincides with an extension line vertically extending from the probe center of the probe card. The probing stage includes a probing elevating mechanism, and a temperature controller to heat and cool the object to be tested. The probing stage supports the substrate of the object to be tested from the bottom surface, and controls the temperature of the object to be tested.

Abstract: A method for fabricating a semiconductor device that prevents the occurrence of bowing and thickness reduction in a dual damascene method. As shown in FIG. 2(B), silicon nitride etching is performed on a semiconductor device in process of fabrication which has a section shown in FIG. 2(A). As a result, part of a copper film is oxidized and changes into oxide. Moreover, a CFx deposit is formed on it. By performing organic insulating film etching by the use of hydrogen plasma in FIG. 2(C), however, the oxide is deoxidized to copper and the CFx deposit is converted into a volatile compound and is removed.

Abstract: A chemical vapor deposition (CVD) apparatus for depositing a low vapor pressure copper precursor onto a silicon wafer. The CVD apparatus includes a CVD reaction chamber with an interior containing a substrate holder adapted to support a substrate, such as a silicon wafer, at a predetermined position within the CVD reaction chamber. An ultrasonic nebulizer is operatively connected to the CVD reaction chamber and is adapted to connect to a source of liquid precursor. The ultrasonic nebulizer has an atomizing discharge end adapted to atomize the liquid precursor and deposit the atomized precursor onto a substrate supported by the substrate holder. A gas distribution ring is disposed within the interior of the CVD reaction chamber for discharging a directionally oriented gas into the atomized precursor to direct the atomized precursor toward the substrate. Additional embodiments and methods for depositing the precursor are described.

Abstract: A semiconductor wafer positioner including a rotating table on which a wafer is placed and a peripheral shape of the wafer is optically detected as a first peripheral shape signal. A control section combines two half cycle components of the first peripheral shape signal, the components being 180.degree. out of phase, to obtain a second peripheral shape signal exhibiting a characteristic feature of flat orientation. A peak in the second peripheral shape signal is detected, and data in the first peripheral shape signal corresponding to the peak and 180.degree. from the peak is invalidated. A curve approximation is utilized to approximate the invalidated data to produce a third peripheral shape signal from which an eccentricity amount and direction are calculated.